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PDF HMC-AUH318 Data sheet ( Hoja de datos )

Número de pieza HMC-AUH318
Descripción GaAs HEMT MMIC MEDIUM POWER AMPLIFIER
Fabricantes Analog Devices 
Logotipo Analog Devices Logotipo



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No Preview Available ! HMC-AUH318 Hoja de datos, Descripción, Manual

v07.0713
Typical Applications
This HMC-AUH318 is ideal for:
• Short Haul / High Capacity Links
3 • Test & Measurement Equipment
• E-Band Communication Systems
HMC-AUH318
GaAs HEMT MMIC MEDIUM POWER
AMPLIFIER, 71 - 76 GHz
Features
Gain: 24 dB
P1dB: +17.5 dBm
Supply Voltage: +4V
50 Ohm Matched Input/Output
Die Size: 2.65 x 1.60 x 0.05 mm
Functional Diagram
General Description
The HMC-AUH318 is a high dynamic range, three
stage GaAs HEMT MMIC Medium Power Amplifier
which operates between 71 and 76 GHz. The HMC-
AUH318 provides 24 dB of gain, and an output
power of +17.5 dBm at 1 dB compression from a +4V
supply voltage. All bond pads and the die backside
are Ti/Au metallized. The HMC-AUH318 GaAs
HEMT MMIC Medium Power Amplifier is compatible
with conventional die attach methods, as well as
thermocompression and thermosonic wire bonding,
making it ideal for MCM and hybrid microcircuit
applications. All data shown herein is measured with
the chip in a 50 Ohm environment and contacted with
RF probes.
Electrical Specifications[1], TA = +25° C, Vdd1 = Vdd2 = 4V, Idd1 = Idd2 = 80 mA [2]
Parameter
Min. Typ. Max.
Frequency Range
71 - 76
Gain
21 24
Input Return Loss
7
Units
GHz
dB
dB
Output Return Loss
4 dB
Output power for 1 dB Compression (P1dB)
17.5 dBm
Saturated Output Power (Psat)
20 dBm
Supply Current (Idd1+Idd2)
160 mA
[1] Unless otherwise indicated, all measurements are from probed die.
[2] Adjust Vgg1, Vgg2 independently between -0.8V to +0.3V (typically -0.1V) to achieve drain currents of Idd1 = 80 mA and Idd2 = 80 mA.
3-1
Products and product information are subject to change without notice.
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1 page




HMC-AUH318 pdf
v07.0713
Assembly Diagram
3
HMC-AUH318
GaAs HEMT MMIC MEDIUM POWER
AMPLIFIER, 71 - 76 GHz
Note 1: Bypass caps should be 100 pF (approximately) single-layer placed no farther than 30 mils from the amplifier.
Note 2: Best performance is obtained by minimizing the length of the ribbon, 1.5 by 0.5 mil, on the input and output.
3-5
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