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PDF HMC415LP3E Data sheet ( Hoja de datos )
| Número de pieza | HMC415LP3E | |
| Descripción | GaAs InGaP HBT MMIC POWER AMPLIFIER | |
| Fabricantes | Analog Devices | |
| Logotipo |  |
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v03.0605
HMC415LP3 / 415LP3E
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 4.9 - 5.9 GHz
11
11 - 66
Typical Applications
This amplifier is ideal for use as a power
amplifier for 4.9 - 5.9 GHz applications:
• 802.11a WLAN
• HiperLAN WLAN
• Access Points
• UNII & ISM Radios
Functional Diagram
Features
Gain: 20 dB
34% PAE @ Psat = +26 dBm
3.7% EVM @ Pout = +15 dBm
with 54 Mbps OFDM Signal
Supply Voltage: +3V
Power Down Capability
Low External Part Count
General Description
The HMC415LP3 & HMC415LP3E are high effi-
ciency GaAs InGaP Heterojunction Bipolar Tran-
sistor (HBT) MMIC Power amplifiers which operate
between 4.9 and 5.9 GHz. The amplifier is pack-
aged in a low cost, leadless surface mount pack-
age with an exposed base for improved RF and
thermal performance. With a minimum of external
components, the amplifier provides 20 dB of gain,
+26 dBm of saturated power, and 34% PAE from a
+3V supply voltage. Vpd can be used for full power
down or RF output power/current control. For +15
dBm OFDM output power (64 QAM, 54 Mbps), the
HMC415LP3 & HMC415LP3E achieve an error
vector magnitude (EVM) of 3.7% meeting 802.11a
linearity requirements.
Electrical Specifications, TA = +25° C, Vs = 3V, Vpd = 3V
Parameter
Frequency Range
Gain
Min. Typ. Max.
4.9 - 5.1
18 20
Min. Typ. Max. Min. Typ. Max.
5.1 - 5.4
5.4 - 5.9
18.5 20.5
16 19
Units
GHz
dB
Gain Variation Over Temperature
0.04 0.05
0.04 0.05
0.04 0.05 dB / °C
Input Return Loss
10
Output Return Loss
10
Output Power for 1dB
Compression (P1dB)
Icq = 285 mA
Icq = 200 mA
20
22.5
22.0
Saturated Output Power (Psat)
25.5
Output Third Order Intercept (IP3)
28 31
Error Vector Magnitude
(54 Mbps OFDM Signal @ +15 dBm Pout)
Icq = 200 mA
Noise Figure
6
Supply Current (Icq)
Vpd = 0V/3V
0.002 /
285
Control Current (Ipd)
Vpd = 3V
7
Switching Speed
tOn, tOff
45
20.5
29
9
12
23.0
22.5
26
32
3.7
6
0.002 /
285
7
45
8
8
18 21.5
21.0
24
27 30
6
0.002 /
285
7
45
dB
dB
dBm
dBm
dBm
%
dB
mA
mA
ns
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1 page  
v03.0605
HMC415LP3 / 415LP3E
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 4.9 - 5.9 GHz
EVM vs. Supply Current,
F = 5.2 GHz
8
7 Icc=160mA
Icc=200mA
6
Icc=240mA
Icc=280mA
5
4
3
2
1
0
10 11 12 13 14 15 16 17 18
OUTPUT POWER (dBm)
EVM vs. Temperature,
Icc = 240 mA, F = 5.2 GHz
8
7
6 +25 C
+85 C
5 -40 C
4
3
2
1
0
10 11 12 13 14 15 16 17 18
OUTPUT POWER (dBm)
Gain, Power & Quiescent
Supply Current vs. Vpd @ 5.2 GHz
27 330
26 310
25 290
24 270
23 250
22 230
21 210
20 190
19 170
18 150
17
Gain
P1dB
130
16 Psat 110
15 90
14 70
13 Icc 50
12 30
1.5 1.75 2 2.25 2.5 2.75 3
Vpd (Vdc)
11
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11 - 69
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| PDF Descargar | [ Datasheet HMC415LP3E.PDF ] | |
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