HMC326MS8GE PDF даташит
Спецификация HMC326MS8GE изготовлена «Analog Devices» и имеет функцию, называемую «GaAs InGaP HBT MMIC DRIVER AMPLIFIER». |
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Детали детали
Номер произв | HMC326MS8GE |
Описание | GaAs InGaP HBT MMIC DRIVER AMPLIFIER |
Производители | Analog Devices |
логотип |
7 Pages
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HMC326MS8G / 326MS8GE
v09.0511
GaAs InGaP HBT MMIC DRIVER
AMPLIFIER, 3.0 - 4.5 GHz
Typical Applications
The HMC326MS8G / HMC326MS8GE is ideal for:
• Microwave Radios
• Broadband Radio Systems
• Wireless Local Loop Driver Amplifier
Features
Psat Output Power: +26 dBm
> 40% PAE
Output IP3: +36 dBm
High Gain: 21 dB
Vs: +5V
Ultra Small Package: MSOP8G
Functional Diagram
General Description
The HMC326MS8G & HMC326MS8GE are high
efficiency GaAs InGaP Heterojunction Bipolar
Transistor (HBT) MMIC driver amplifiers which
operate between 3.0 and 4.5 GHz. The amplifier
is packaged in a low cost, surface mount 8 leaded
package with an exposed base for improved RF and
thermal performance. The amplifier provides 21 dB
of gain and +26 dBm of saturated power from a +5V
supply voltage. Power down capability is available to
conserve current consumption when the amplifier is
not in use. Internal circuit matching was optimized to
provide greater than 40% PAE.
Electrical Specifications, TA = +25° C, Vs = 5V, Vpd = 5V
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current (Icc)
Supply Current (Icc)
Control Current (Ipd)
Switching Speed
Min.
18
Vpd = 0V
Vpd = 5V
tOn/tOff
21
32
110
Typ.
3.0 - 4.5
21
0.025
12
7
23.5
26
36
5
1
130
7
10
Max.
0.035
160
Units
GHz
dB
dB / °C
dB
dB
dBm
dBm
dBm
dB
uA
mA
mA
ns
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HMC326* PRODUCT PAGE QUICK LINKS
Last Content Update: 02/23/2017
COMPARABLE PARTS
View a parametric search of comparable parts.
EVALUATION KITS
• HMC326MS8G Evaluation Board
DOCUMENTATION
Application Notes
• AN-1363: Meeting Biasing Requirements of Externally
Biased RF/Microwave Amplifiers with Active Bias
Controllers
• Broadband Biasing of Amplifiers General Application Note
• MMIC Amplifier Biasing Procedure Application Note
• Thermal Management for Surface Mount Components
General Application Note
Data Sheet
• HMC326 Data Sheet
TOOLS AND SIMULATIONS
• HMC326 S-Parameter
REFERENCE MATERIALS
Quality Documentation
• HMC Legacy PCN: MS##, MS##E and MS##G,MS##GE
packages - Relocation of pre-existing production
equipment to new building
• Package/Assembly Qualification Test Report: MS8G (QTR:
2014-00393)
• PCN: MS, QS, SOT, SOIC packages - Sn/Pb plating vendor
change
• Semiconductor Qualification Test Report: GaAs HBT-B
(QTR: 2013-00229)
DESIGN RESOURCES
• HMC326 Material Declaration
• PCN-PDN Information
• Quality And Reliability
• Symbols and Footprints
DISCUSSIONS
View all HMC326 EngineerZone Discussions.
SAMPLE AND BUY
Visit the product page to see pricing options.
TECHNICAL SUPPORT
Submit a technical question or find your regional support
number.
DOCUMENT FEEDBACK
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v09.0511
HMC326MS8G / 326MS8GE
GaAs InGaP HBT MMIC DRIVER
AMPLIFIER, 3.0 - 4.5 GHz
Broadband Gain & Return Loss
25
20
15
10 S21
S11
5 S22
0
-5
-10
-15
-20
2 2.5 3 3.5 4 4.5 5
FREQUENCY (GHz)
5.5
6
Gain vs. Temperature
25
23
21
19
17
15
3
+25C
+85C
-40C
3.25
3.5 3.75
4
FREQUENCY (GHz)
4.25 4.5
P1dB vs. Temperature
30
28
26
+25C
+85C
-40C
24
22
20
3
3.25 3.5 3.75
4
FREQUENCY (GHz)
4.25 4.5
Psat vs. Temperature
30
28
26
24
22
20
3
+25C
+85C
-40C
3.25 3.5 3.75
4
FREQUENCY (GHz)
4.25 4.5
Output IP3 vs. Temperature
40
38
36
34
32
30
3
+25C
+85C
-40C
3.25 3.5 3.75
4
FREQUENCY (GHz)
4.25 4.5
Power Compression @ 3.5 GHz
45
40
35
30
25
20
15
10 Output Power (dBm)
5
Gain (dB)
PAE (%)
0
-8 -6 -4 -2 0 2 4 6 8 10
INPUT POWER (dBm)
12
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Номер в каталоге | Описание | Производители |
HMC326MS8G | GaAs InGaP HBT MMIC DRIVER AMPLIFIER | Hittite Microwave Corporation |
HMC326MS8GE | GaAs InGaP HBT MMIC DRIVER AMPLIFIER | Analog Devices |
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