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PDF HMC451LP3 Data sheet ( Hoja de datos )
| Número de pieza | HMC451LP3 | |
| Descripción | GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER | |
| Fabricantes | Analog Devices | |
| Logotipo |  |
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v00.0808
Typical Applications
The HMC451LP3(E) is ideal for:
• Microwave Radio & VSAT
• Military & Space
• Test Equipment & Sensors
9 • Fiber Optics
• LO Driver for HMC Mixers
Functional Diagram
HMC451LP3 / 451LP3E
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 5 - 18 GHz
Features
Gain: 18 dB
Saturated Power: +21 dBm @ 18% PAE
Output IP3: +28 dBm
Single Supply: +5V @ 120 mA
50 Ohm Matched Input/Output
16 Lead 3x3mm SMT Package: 9mm²
General Description
The HMC451LP3(E) is an efficient GaAs PHEMT
MMIC Medium Power Amplifier housed in a leadless
RoHS compliant SMT package. Operating between
5 and 18 GHz, the amplifier provides 18 dB of gain,
+21 dBm of saturated power and 18% PAE from a
single +5V supply. This 50 Ohm matched amplifier
does not require any external components and the
RF I/O’s are DC blocked, making it an ideal linear
gain block or LO driver for HMC mixers. The
HMC451LP3(E) eliminates the need for wire bonding,
and allows the use of surface mount manufacturing
techniques.
Electrical Specifications, TA = +25° C, Vdd1 = Vdd2 = +5V
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1 dB
Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current (Idd)
Min.
15
16.5
Typ.
5 - 16
18
0.02
13
12
19.5
21
28
7
120
Max.
0.03
150
Min.
12.5
16
Typ.
16 - 18
16
0.02
13
8
19
20
25
7
120
Max.
0.03
150
Units
GHz
dB
dB/ °C
dB
dB
dBm
dBm
dBm
dB
mA
9-1
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1 page  
v00.0808
Absolute Maximum Ratings
Drain Bias Voltage (Vdd1 = Vdd2)
RF Input Power (RFIN)(Vdd = +5Vdc)
Channel Temperature
Continuous Pdiss (T = 85 °C)
(derate 12.8 mW/°C above 85 °C)
Thermal Resistance
(channel to ground paddle)
Storage Temperature
Operating Temperature
+5.5V
+10 dBm
150 °C
0.83 W
78 °C/W
-65 to +150 °C
-40 to +85 °C
Outline Drawing
HMC451LP3 / 451LP3E
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 5 - 18 GHz
Typical Supply Current vs. Vdd1 = Vdd2
Vdd1 = Vdd2 (V)
+4.5
Idd1 + Idd2 (mA)
120
+5.0
122
+5.5
124
Note: Amplifier will operate over full voltage range shown above
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
9
Package Information
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE
SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED
LAND PATTERN.
Part Number
HMC451LP3
Package Body Material
Low Stress Injection Molded Plastic
Lead Finish
Sn/Pb Solder
HMC451LP3E RoHS-compliant Low Stress Injection Molded Plastic
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
100% matte Sn
MSL Rating
MSL1 [1]
MSL1 [2]
Package Marking [3]
451
XXXX
451
XXXX
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9-4
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| PDF Descargar | [ Datasheet HMC451LP3.PDF ] | |
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