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PDF HMC441LP3E Data sheet ( Hoja de datos )
| Número de pieza | HMC441LP3E | |
| Descripción | GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER | |
| Fabricantes | Analog Devices | |
| Logotipo |  |
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HMC441LP3 / 441LP3E
v05.0812
GaAs pHEMT MMIC MEDIUM
POWER AMPLIFIER, 6.5 - 13.5 GHz
Typical Applications
The HMC441LP3 / HMC441LP3E is a medium PA for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• VSAT
• LO Driver for HMC Mixers
• Military EW & ECM
Features
Gain: 14 dB
Saturated Power: +20 dBm @ 20% PAE
Single Supply Voltage:
+5V w/ Optional Gate Bias
50 Ohm Matched Input/Output
16 Lead 3x3mm SMT Package: 9mm2
Functional Diagram
General Description
The HMC441LP3 & HMC441LP3E are broadband
GaAs PHEMT MMIC Medium Power Amplifiers which
operate between 6.5 and 13.5 GHz. The leadless
plastic QFN surface mount packaged amplifier
provides 14 dB of gain, +20 dBm saturated power
at 20% PAE from a +5V supply voltage. An optional
gate bias is provided to allow adjustment of gain,
RF output power, and DC power dissipation. This
50 Ohm matched amplifier does not require any
external components making it an ideal linear gain
block or driver for HMC SMT mixers.
Vgg1, Vgg2: Optional Gate Bias
Electrical Specifications, TA = +25° C, Vdd = 5V, Vgg1 = Vgg2 = Open
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current (Idd)
Min. Typ. Max. Min. Typ. Max.
6.5 - 8.0
8.0 - 11.0
10 13
12 14
0.02 0.025
0.02 0.025
12 15
12 15
13 16
15 18
18.5
20
23 26
26 29
5.0 4.5
90 115
90 115
Min. Typ. Max.
11.0 - 13.5
10 13
0.02 0.025
14
13
14 17
19.5
26 29
4.75
90 115
Units
GHz
dB
dB/ °C
dB
dB
dBm
dBm
dBm
dB
mA
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1 page  
v05.0812
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
Gate Bias Voltage (Vgg1,Vgg2)
RF Input Power (RFIN)(Vdd = +5 Vdc)
Channel Temperature
Continuous Pdiss (T = 85 °C)
(derate 8.5 mW/°C above 85 °C)
Thermal Resistance
(channel to ground paddle)
Storage Temperature
Operating Temperature
+6 Vdc
-8 to 0 Vdc
+15 dBm
175 °C
0.76 W
118.2 °C/W
-65 to +150 °C
-40 to +85 °C
Outline Drawing
HMC441LP3 / 441LP3E
GaAs pHEMT MMIC MEDIUM
POWER AMPLIFIER, 6.5 - 13.5 GHz
Typical Supply Current vs. Vdd
Vdd (V)
Idd (mA)
+5.5
92
+5.0
90
+4.5
88
+3.3
83
+3.0
82
Note: Amplifier will operate over full voltage range shown above
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE
SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED
LAND PATTERN.
Package Information
Part Number
Package Body Material
HMC441LP3
Low Stress Injection Molded Plastic
Lead Finish
Sn/Pb Solder
HMC441LP3E
RoHS-compliant Low Stress Injection Molded Plastic
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
100% matte Sn
MSL Rating
MSL1 [1]
MSL1 [2]
Package Marking [3]
441
XXXX
441
XXXX
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4
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| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet HMC441LP3E.PDF ] | |
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