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PDF HMC1131 Data sheet ( Hoja de datos )
| Número de pieza | HMC1131 | |
| Descripción | Medium Power Amplifier | |
| Fabricantes | Analog Devices | |
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Data Sheet
GaAs, pHEMT, MMIC, Medium Power
Amplifier, 24 GHz to 35 GHz
HMC1131
FEATURES
High saturated output power (PSAT): 25 dBm
High output third-order intercept (IP3): 35 dBm
High gain: 22 dB (24 GHz to 27 GHz)
High output power for 1 dB compression (P1dB): 24 dBm
DC supply: 5 V at 225 mA
Compact 24-lead, 4 mm × 4 mm LCC package
APPLICATIONS
Point-to-point radios
Point-to-multipoint radios
VSAT and SATCOM
FUNCTIONAL BLOCK DIAGRAM
NIC 1
GND 2
RFIN 3
GND 4
NIC 5
NIC 6
1.5kΩ 1.5kΩ
HMC1131
18 NIC
17 GND
16 RFOUT
15 GND
14 NIC
13 NIC
Figure 1.
PACKAGE
BASE
GENERAL DESCRIPTION
The HMC1131 is a gallium arsenide (GaAs), pseudomorphic
high electron mobility transfer (pHEMT), monolithic microwave
integrated circuit (MMIC), driver amplifier that operates from
24 GHz to 35 GHz. The HMC1131 provides 22 dB of gain at the
24 GHz to 27 GHz range, 35 dBm output IP3, and 24 dBm of
output power at 1 dB gain compression, while requiring 225 mA
from a 5 V supply. The HMC1131 is capable of supplying 25 dBm
of saturated output power and is housed in a compact, 4 mm ×
4 mm ceramic leadless chip carrier (24-lead LCC). The HMC1131
is an ideal driver amplifier for a wide range of applications,
including point-to-point radios, from 24 GHz to 35 GHz.
Rev. A
Document Feedback
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responsibilityisassumedbyAnalogDevices for itsuse,nor foranyinfringementsofpatentsor other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarksandregisteredtrademarksarethepropertyoftheirrespectiveowners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
©2015 Analog Devices, Inc. All rights reserved.
Technical Support
www.analog.com
1 page  
HMC1131
ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter
Drain Bias Voltage (VDD)
RF Input Power (RFIN)
Channel Temperature
Continuous Power Dissipation (PDISS),
TA = 85°C (Derate 22 mW/°C)
Thermal Resistance, RTH (Junction to
Ground Paddle)
Operating Temperature
Storage Temperature
ESD Sensitivity, Human Body Model (HBM)
Maximum Peak Reflow Temperature
Rating
5.5 V
12 dBm
175°C
1.97 W
45.5°C/W
−40°C to +85°C
−65°C to +150°C
Class 0,
passed 150 V
260°C
Data Sheet
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
ESD CAUTION
Rev. A | Page 4 of 14
5 Page 
HMC1131
0
–10
–20
–30
–40
–50
TA = +85°C
TA = +25°C
TA = –40°C
–60
24 25 26 27 28 29 30 31 32 33 34 35 36
FREQUENCY (GHz)
Figure 26. Reverse Isolation vs. Frequency at Various Temperatures
25
20
15
10
5
10dBm
12dBm
14dBm
0
170 175 180 185 190 195 200 205 210 215 220 225
IDD (mA)
Figure 27. Input IP3 vs. IDD over POUT/Tone at 30 GHz,
VDD = 5 V, IDD = 225 mA, IDD2 = Fixed, and IDD1 Varied from 0 mA to 50 mA
2.0
27GHz
28GHz
1.8 30GHz
32GHz
33GHz
1.6 34GHz
1.4
1.2
1.0
0.8
0.6
–12 –9 –6 –3 –0
3
6
9
INPUT POWER (dBm)
Figure 28. Power Dissipation (PDISS) at 85°C vs. Input Power for
Various Frequencies
Data Sheet
40
35
30
25
20
15
10
5 10dBm
12dBm
14dBm
0
170 175 180 185 190 195 200 205 210 215 220 225
IDD (mA)
Figure 29. Output IP3 vs. IDD over POUT/Tone at 30 GHz,
VDD = 5 V, IDD = 225 mA, IDD2 = Fixed, and IDD1 Varied from 0 mA to 50 mA
25
20
15
10
5
0
170 175 180 185 190 195 200 205 210 215 220 225
IDD (mA)
Figure 30. Gain vs. IDD over POUT/Tone = 14 dBm at 30 GHz,
VDD = 5 V, IDD = 225 mA, IDD2 = Fixed, and IDD1 Varied from 0 mA to50 mA
Rev. A | Page 10 of 14
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet HMC1131.PDF ] | |
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