HMC1022 PDF даташит
Спецификация HMC1022 изготовлена «Analog Devices» и имеет функцию, называемую «GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER». |
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Детали детали
Номер произв | HMC1022 |
Описание | GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER |
Производители | Analog Devices |
логотип |
10 Pages
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Typical Applications
The HMC1022 is ideal for:
• Test Instrumentation
• Microwave Radio & VSAT
• Military & Space
• Telecom Infrastructure
• Fiber Optics
Functional Diagram
HMC1022
v00.0811
GaAs pHEMT MMIC
0.25 WATT POWER AMPLIFIER, DC - 48 GHz
Features
High P1dB Output Power: 22 dBm
High Psat Output Power: 24 dBm
High Gain: 12 dB
High Output IP3: 32 dBm
Supply Voltage: +10 V @ 150 mA
50 Ohm Matched Input/Output
Die Size: 2.82 x 1.50 x 0.1 mm
General Description
The HMC1022 is a GaAs pHEMT MMIC Distrib-
uted Power Amplifier which operates between DC
and 48 GHz. The amplifier provides 12 dB of gain,
32 dBm output IP3 and +22 dBm of output power at
1 dB gain compression while requiring 150 mA from
a +10 V supply. The HMC1022 exhibits a slightly
positive gain slope from 10 to 35 GHz, making
it ideal for EW, ECM, Radar and test equipment
applications. The HMC1022 amplifier I/Os are
internally matched to 50 Ohms facilitating integra-
tion into Multi-Chip-Modules (MCMs). All data is
taken with the chip connected via two 0.025 mm
(1 mil) wire bonds of minimal length 0.31 mm (12 mils).
Electrical Specifications, TA = +25° C, Vdd = +10 V, Vgg2 = +4.5 V, Idd = 150 mA [1]
Parameter
Min. Typ. Max. Min. Typ. Max.
Frequency Range
DC - 16
16 - 36
Gain
9.5 11.5
9.5 12
Gain Flatness
±0.5
±0.3
Gain Variation Over Temperature
0.012
0.018
Input Return Loss
18 16
Output Return Loss
28 22
Output Power for 1 dB Compression (P1dB)
20
22
19.5 21.5
Saturated Output Power (Psat)
24.5
23.5
Output Third Order Intercept (IP3)
35
32
Noise Figure
4 5.5
Supply Current
(Idd) (Vdd= 10V, Vgg1= -0.8V Typ.)
150
150
[1] Adjust Vgg1 between -2 to 0 V to achieve Idd = 150 mA typical.
Min.
9.5
16
Typ.
36 - 48
11.5
±1.1
0.041
15
18
19
21
29
8
150
Max.
Units
GHz
dB
dB
dB/ °C
dB
dB
dBm
dBm
dBm
dB
mA
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HMC1022
v00.0811
GaAs pHEMT MMIC
0.25 WATT POWER AMPLIFIER, DC - 48 GHz
Gain & Return Loss
20
10
0
S21
S11
S22
-10
-20
-30
-40
0
5 10 15 20 25 30 35 40 45 50 55
FREQUENCY (GHz)
Gain vs. Temperature
18
16
+25C
14
+85C
-55C
12
10
8
6
0 5 10 15 20 25 30 35 40 45 50
FREQUENCY (GHz)
Input Return Loss vs. Temperature
0
+25C
+85C
-10 -55C
-20
-30
-40
0
5 10 15 20 25 30 35 40 45 50
FREQUENCY (GHz)
Output Return Loss vs. Temperature
0
-10
+25C
+85C
-55C
-20
-30
-40
0
5 10 15 20 25 30 35 40 45 50
FREQUENCY (GHz)
Gain vs. Vdd [1]
Low Frequency Gain & Return Loss
18 20
16
+8V
+10V
14 +11V
12
10
0
-10
S21
S11
S22
-20
10 -30
-40
8
-50
6
0 5 10 15 20 25 30 35 40 45 50
FREQUENCY (GHz)
-60
0.0001
0.001
0.01
0.1
FREQUENCY (GHz)
1
[1] For Vdd= +8V, Vgg2=+3.5V; for Vdd= +10V, Vgg2= +4.5V; for Vdd= 11V, Vgg2= +5.5V.
10
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HMC1022
v00.0811
GaAs pHEMT MMIC
0.25 WATT POWER AMPLIFIER, DC - 48 GHz
P1dB vs. Temperature
26
24
22
20
18
+25C
+85C
16 -55C
14
0
5 10 15 20 25 30 35 40 45 50
FREQUENCY (GHz)
P1dB vs. Supply Voltage [1]
26
24
22
20
18
+8V
+10V
+11V
16
14
0
5 10 15 20 25 30 35 40 45 50
FREQUENCY (GHz)
Psat vs. Temperature
28
26
24
22
20 +25C
+85C
-55C
18
16
0
5 10 15 20 25 30 35 40 45 50
FREQUENCY (GHz)
Psat vs. Supply Voltage [1]
28
26
24
22
20 +8V
+10V
+11V
18
16
0
5 10 15 20 25 30 35 40 45 50
FREQUENCY (GHz)
P1dB vs. Supply Current [2]
26
Psat vs. Supply Current [2]
28
24
22
20
18
16
14
100 mA
150 mA
26
24
22
20
100 mA
150 mA
18
12
0
5 10 15 20 25 30 35 40 45 50
16
0
FREQUENCY (GHz)
[1] For Vdd= +8V, Vgg2=+3.5V; for Vdd= +10V, Vgg2= +4.5V; forVdd= 11V Vgg2= +5.5V.
[2] Vdd= +10V, Vgg2=+3.5V.
5 10 15 20 25 30 35 40 45 50
FREQUENCY (GHz)
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