|
|
PDF HMC8142 Data sheet ( Hoja de datos )
| Número de pieza | HMC8142 | |
| Descripción | E-Band Power Amplifier | |
| Fabricantes | Analog Devices | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de HMC8142 (archivo pdf) en la parte inferior de esta página. Total 17 Páginas | ||
|
No Preview Available !
Data Sheet
81 GHz to 86 GHz, E-Band Power Amplifier
With Power Detector
HMC8142
FEATURES
GENERAL DESCRIPTION
Gain: 21 dB typical
Output power for 1 dB compression (P1dB): 25 dBm typical
Saturated output power (PSAT): 26 dBm typical
Output third-order intercept (OIP3): 29 dBm typical
Input return loss: 12 dB typical
Output return loss: 8 dB typical
DC supply: 4 V at 450 mA
No external matching required
Die size: 3.039 mm × 1.999 mm × 0.05 mm
APPLICATIONS
E-band communication systems
High capacity wireless backhaul radio systems
Test and measurement
The HMC8142 is an integrated E-band gallium arsenide (GaAs),
pseudomorphic high electron mobility transistor (pHEMT),
monolithic microwave integrated circuit (MMIC), medium power
amplifier with a temperature compensated on-chip power detector
that operates from 81 GHz to 86 GHz. The HMC8142 provides
21 dB of gain, 25 dBm of output power at 1 dB compression,
29 dBm of output third-order intercept, and 26 dBm of saturated
output power at 20% power added efficiency (PAE) from a 4 V
power supply. The HMC8142 exhibits excellent linearity and is opti-
mized for E-band communications and high capacity wireless
backhaul radio systems. The amplifier configuration and high gain
make it an excellent candidate for last stage signal amplification
before the antenna. All data is taken with the chip in a 50 Ω test
fixture connected via a 3 mil wide × 0. 5 mil thick × 7 mil long
ribbon on each port.
FUNCTIONAL BLOCK DIAGRAM
4 567
VDD1
VDD2
89
VDD3
10 11
VDD4
3
RFIN
2
1
HMC8142
RFOUT
12
13
14
VGG1
VGG2
25 24
23 22
VGG3
21 20 19
Figure 1.
VGG4
18
VREF
17 16
VDET
15
Rev. A
Document Feedback
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarksandregisteredtrademarksarethepropertyoftheirrespectiveowners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
©2016 Analog Devices, Inc. All rights reserved.
Technical Support
www.analog.com
1 page  
HMC8142
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter
Drain Bias Voltage (VDD1 to VDD4)
Gate Bias Voltage (VGG1 to VGG4)
Maximum Junction Temperature (to
Maintain 1 Million Hours Mean Time to
Failure (MTTF))
Storage Temperature Range
Operating Temperature Range
Rating
4.5 V
−3 V to 0 V
175°C
−65°C to +150°C
−55°C to +85°C
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
Data Sheet
THERMAL RESISTANCE
Table 3. Thermal Resistance
Package Type
25-Pad Bare Die [CHIP]
θJC1
48.33
1 Based on ABLETHERM® 2600BT as die attach epoxy with thermal
conductivity of 20 W/mK.
ESD CAUTION
Unit
°C/W
Rev. A | Page 4 of 16
5 Page 
HMC8142
30
29 GAIN (dB)
P1dB (dBm)
28 PSAT (dBm)
27
26
25
24
23
22
21
20
350
400
IDD (mA)
450
Figure 27. Gain, Output P1dB, and PSAT vs. Drain Current (IDD)
at RF = 86 GHz
28 580
24 560
20 540
16 520
12 500
8 480
POUT
4 GAIN 460
PAE
IDD
0 440
–15 –13 –11 –9 –7 –5 –3 –1 1 3 5 7 9 11
INPUT POWER (dBm)
Figure 28. POUT, Gain, PAE, and IDD vs. Input Power at RF = 83.5 GHz,
Drain Current (IDD) = 450 mA
28 560
24 530
20 500
16 470
12 440
8 410
POUT
4 GAIN 380
PAE
IDD
0 350
–15 –13 –11 –9 –7 –5 –3 –1 1 3 5 7 9 11
INPUT POWER (dBm)
Figure 29. POUT, Gain, PAE, and IDD vs. Input Power at RF = 81 GHz,
Drain Current (IDD) = 350 mA
Data Sheet
28 580
24 560
20 540
16 520
12 500
8 480
POUT
GAIN
4
PAE
460
IDD
0 440
–15 –13 –11 –9 –7 –5 –3 –1 1 3 5 7 9 11
INPUT POWER (dBm)
Figure 30. POUT, Gain, PAE, and IDD vs. Input Power at RF = 81 GHz,
Drain Current (IDD) = 450 mA
28 580
24 560
20 540
16 520
12 500
8 480
POUT
GAIN
4
PAE
460
IDD
0 440
–15 –13 –11 –9 –7 –5 –3 –1 1 3 5 7 9 11
INPUT POWER (dBm)
Figure 31. POUT, Gain, PAE, and IDD vs. Input Power at RF = 86 GHz,
Drain Current (IDD) = 450 mA
28 560
24 530
20 500
16 470
12 440
8 410
POUT
4 GAIN 380
PAE
IDD
0 350
–15 –13 –11 –9 –7 –5 –3 –1 1 3 5 7 9 11
INPUT POWER (dBm)
Figure 32. POUT, Gain, PAE, and IDD vs. Input Power at RF = 83.5 GHz,
Drain Current (IDD) = 350 mA
Rev. A | Page 10 of 16
11 Page | ||
| Páginas | Total 17 Páginas | |
| PDF Descargar | [ Datasheet HMC8142.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| HMC814 | GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER |  Hittite Microwave Corporation |
| HMC8142 | E-Band Power Amplifier | Analog Devices |
| HMC814LC3B | X2 Active Multiplier SMT | Hittite Microwave Corporation |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |