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PDF HMC7229CHIPS Data sheet ( Hoja de datos )
| Número de pieza | HMC7229CHIPS | |
| Descripción | 1W Power Amplifier | |
| Fabricantes | Analog Devices | |
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Data Sheet
FEATURES
32 dBm PSAT with 22% PAE
P1dB POUT: 31.5 dBm
High OIP3: 39.5 dBm
High gain: 24.5 dB
50 Ω matched input/output
APPLICATIONS
Point to point radios
Point to multipoint Radio
VSAT and SATCOM
33 GHz to 40 GHz, GaAs, pHEMT, MMIC, 1 W
Power Amplifier with Power Detector
HMC7229CHIPS
GENERAL DESCRIPTION
The HMC7229CHIPS is a four-stage, gallium arsenide (GaAs),
pseudomorphic high electron mobility transfer (pHEMT),
monolithic microwave integrated circuit (MMIC), 1 W power
amplifier with an integrated temperature compensated on-chip
power detector, operating between 33 GHz and 40 GHz. The
HMC7229CHIPS provides a typical range of 23 dB to 24.5 dB of
gain and a range of 30 dBm to 32 dBm of saturated output power
(PSAT) with 12% to 22% (typical) power added efficiency (PAE)
range across a band of 33 GHz to 40 GHz from a 6 V supply. With
an excellent OIP3 with a range of 37 dBm to 39.5 dBm across a
band of 33 GHz to 40 GHz, the HMC7229CHIPS is ideal for linear
applications such as high capacity point to point or point to
multipoint radios or very small aperture terminal (VSAT)/satellite
communications (SATCOM) applications demanding 32 dBm of
efficient saturated output power. The radio frequency (RF) input/
output ports are internally matched and dc blocked for easy
integration into higher level assemblies.
FUNCTIONAL BLOCK DIAGRAM
VGG1
VDD1
VDD2
VDD3
VDD4
23
45
6
7 VREF
RFIN 1
HMC7229CHIPS
8 RFOUT
14
VGG2
13
VDD5
12
VDD6
11
VDD7
Figure 1.
9 VDET
10
VDD8
Rev. 0
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responsibilityisassumedbyAnalogDevices for itsuse,nor foranyinfringementsofpatentsor other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
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Tel: 781.329.4700
©2016 Analog Devices, Inc. All rights reserved.
Technical Support
www.analog.com
1 page  
Data Sheet
ABSOLUTE MAXIMUM RATINGS
Table 4.
Parameter
Rating
Drain Bias Voltage (VDD)
7V
RF Input Power (RFIN)
21 dBm
Channel Temperature
175°C
Continuous Power Dissipation (PDISS),
9.7 W
TA = 85°C (Derate 107 mW/°C Above 85°C)
Thermal Resistance, θJC (Channel to
Bottom Die)
9.3°C/W
Storage Temperature Range
−65°C to +150°C
Operating Temperature Range
−55°C to +85°C
ESD Sensitivity, Human Body Model (HBM) Class 0, passed 150 V
HMC7229CHIPS
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
ESD CAUTION
Rev. 0 | Page 5 of 16
5 Page 
Data Sheet
0
–10
–55°C
–20 +25°C
+85°C
–30
–40
–50
–60
–70
–80
–90
33 34 35 36 37 38 39 40
FREQUENCY (GHz)
Figure 28. Reverse Isolation vs. Frequency for Various Temperatures
35
32
29
PSAT
P1dB
GAIN
26
23
20
5.0 5.2 5.4 5.6 5.8 6.0
VDD (V)
Figure 29. Gain, P1dB, and PSAT vs Supply Voltage (VDD) at 36 GHz
35
32
29
PSAT
P1dB
GAIN
26
23
20
800
900
1000
1100
IDQ (mA)
1200
Figure 30. Gain, P1dB, and PSAT vs. Supply Current (IDQ) at 36 GHz
HMC7229CHIPS
9.0
8.5
33GHz
8.0
34GHz
36GHZ
37GHz
7.5 39GHz
40GHz
7.0
6.5
6.0
5.5
5.0
4.5
4.0
–10 –8 –6 –4 –2 0 2 4 6 8 10 12 14
INPUT POWER (dBm)
Figure 31. Power Dissipation vs. Input Power for Various Frequencies
at TA = 85°C
10
1
100m
–55°C
+25°C
+85°C
10m
1m
0.1m
–20
–10 0 10 20
OUTPUT POWER (dBm)
30
Figure 32. Detector Voltage (VDET) vs. Output Power at 38.5 GHz at Various
Temperatures
25
20
15
10
5
0
33 34 35 36 37 38 39 40
FREQUENCY (GHz)
Figure 33. PAE at PSAT vs Frequency
Rev. 0 | Page 11 of 16
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