HMC461LP3E PDF даташит
Спецификация HMC461LP3E изготовлена «Analog Devices» и имеет функцию, называемую «InGaP HBT 1 Watt High IP3 AMPLIFIER». |
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Детали детали
Номер произв | HMC461LP3E |
Описание | InGaP HBT 1 Watt High IP3 AMPLIFIER |
Производители | Analog Devices |
логотип |
9 Pages
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v02.0705
11
Typical Applications
A high linearity 1 watt amplifier for:
• Multi-Carrier Systems
• GSM, GPRS & EDGE
• CDMA & W-CDMA
• PHS
• Balanced or Push-Pull Configurable
Functional Diagram
HMC461LP3 / 461LP3E
InGaP HBT 1 Watt High IP3
AMPLIFIER, 1.7 - 2.2 GHz
Features
+45 dBm Output IP3 (Balanced Configuration)
12 dB Gain
48% PAE @ +30.5 dBm Pout
+20 dBm W-CDMA Channel Power @ -45 dBc ACP
3x3 mm QFN SMT Package
General Description
The HMC461LP3 & HMC461LP3E are 1.7 - 2.2 GHz
high output IP3 GaAs InGaP Heterojunction Bipolar
Transistor (HBT) dual-channel MMIC amplifiers.
The linear performance of two HMC455LP3 high
IP3 drivers is offered in this single IC which can be
configured in a balanced or push-pull amplifier circuit.
The amplifier provides 12 dB of gain and +30.5 dBm
of saturated power at 48% PAE from a single +5 Vdc
supply while utilizing external baluns in a balanced
configuration. The high output IP3 of +45 dBm coupled
with the low VSWR of 1.2:1 make the HMC461LP3
& HMC461LP3E ideal driver amplifiers for PCS/3G
wireless infrastructures. A low cost, leadless 3x3 mm
QFN surface mount package (LP3) houses the dual
MMIC amplifier IC. The LP3 provides an exposed
base for excellent RF and thermal performance.
Electrical Specifications*, TA = +25° C, Vs= +5V
Parameter
Frequency Range
Gain
Min.
10
Typ.
1.7 - 1.9
12.5
Max.
Min.
9
Typ.
1.9 - 2.2
12
Max.
Gain Variation Over Temperature
0.012
0.02
0.012
0.02
Input Return Loss
Output Return Loss
Output Power for 1dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current (Icq)
17
20
26 29
29.5
41 44
6.5
300
26.5
42
18
25
29.5
30.5
45
6
300
Units
GHz
dB
dB / °C
dB
dB
dBm
dBm
dBm
dB
mA
11 - 250
* Specifications and data reflect HMC461LP3 measured with external baluns in a balanced amplifier configuration optimized for
1.85 - 2.2 GHz per application circuit herein. Contact HMC Applications for 1.7 - 1.85 GHz performance optimization.
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HMC461* PRODUCT PAGE QUICK LINKS
Last Content Update: 02/23/2017
COMPARABLE PARTS
View a parametric search of comparable parts.
EVALUATION KITS
• HMC461LP3 Evaluation Board
DOCUMENTATION
Application Notes
• AN-1363: Meeting Biasing Requirements of Externally
Biased RF/Microwave Amplifiers with Active Bias
Controllers
• Broadband Biasing of Amplifiers General Application Note
• MMIC Amplifier Biasing Procedure Application Note
• Thermal Management for Surface Mount Components
General Application Note
Data Sheet
• HMC461 Data Sheet
TOOLS AND SIMULATIONS
• HMC461 S-Parameter
REFERENCE MATERIALS
Quality Documentation
• Package/Assembly Qualification Test Report: 16L 3x3mm
QFN Package (QTR: 11003 REV: 02)
• Package/Assembly Qualification Test Report: LP2, LP2C,
LP3, LP3B, LP3C, LP3D, LP3F, LP3G (QTR: 2014-0364)
• Package/Assembly Qualification Test Report: Plastic
Encapsulated QFN (QTR: 05006 REV: 02)
• Semiconductor Qualification Test Report: GaAs HBT-B
(QTR: 2013-00229)
DESIGN RESOURCES
• HMC461 Material Declaration
• PCN-PDN Information
• Quality And Reliability
• Symbols and Footprints
DISCUSSIONS
View all HMC461 EngineerZone Discussions.
SAMPLE AND BUY
Visit the product page to see pricing options.
TECHNICAL SUPPORT
Submit a technical question or find your regional support
number.
DOCUMENT FEEDBACK
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No Preview Available ! |
v02.0705
HMC461LP3 / 461LP3E
InGaP HBT 1 Watt High IP3
AMPLIFIER, 1.7 - 2.2 GHz
Broadband Gain & Return Loss
15
5
S21
-5 S11
S22
-15
-25
1
1.5 2 2.5
FREQUENCY (GHz)
3
Gain vs. Temperature
20
17
+25C
+85C
-40C
14
11
8
5
1.7 1.8 1.9 2 2.1 2.2 2.3
FREQUENCY (GHz)
11
Input Return Loss vs. Temperature
0
-5
+25C
-10 +85C
-40C
-15
-20
-25
1.5
1.7 1.9 2.1 2.3
FREQUENCY (GHz)
2.5
Output Return Loss vs. Temperature
0
-5
+25C
-10 +85C
-40C
-15
-20
-25
-30
1.5
1.7 1.9 2.1 2.3
FREQUENCY (GHz)
2.5
P1dB vs. Temperature
33
Psat vs. Temperature
33
31 31
29 29
27
+25C
25 +85C
-40C
+25C
27 +85C
-40C
25
23
1.7 1.8 1.9 2 2.1 2.2 2.3
FREQUENCY (GHz)
23
1.7 1.8 1.9 2 2.1 2.2 2.3
FREQUENCY (GHz)
Specifications and data reflect HMC461LP3 measured with external baluns in a balanced
amplifier configuration optimized for 1.85 - 2.2 GHz per application circuit herein.
Contact HMC Applications for 1.7 - 1.85 GHz performance optimization.
IrrlTiniecgrfaseohpdntrseomsemnoasfatiisibtrohkingislrirtdayafunnpirsdtnaeairdrstesihegsbesFuiysdmtthoeimebar2erdtypd0mlbipActyaranayArAtadiiorlncoeelnapmgseluooahlDrg,trkeofaDrsdvtoheiamceeRvrereicwilstoetisihvssieuaseefsopdbeurrr.neoiy,dtSlpise,epeCvurreaetscyahdeinnfo,ieycftndoatoplhtmriaebotftienoerossrnraetafsscpnOooupcyrbelurjiarpcerndadatcficrtvtt,eieeentenogMaotrecnwromhdiOAgnaerehnrndrtnegss0tls.eie-ao1olbwfrif8lAnsiepthn.2a,eoatHue4lpotonagwntlsPoetDeotviehawcreveorosi,.ctwheeNnnesoorw.ec:.ohFOPA9niohp7nttroptea8inlptiTc-ecere2i:atc.c75tceHih8o0,on1niodt-mS3tl3eoi2ult3gie9vpy4e-p4rWM3oy7r,a0tiy:ac0F,Pnr•Padho.OoxOwtn:or.deaB9:epvo71rlaex-o88cn9e0-Cl12i0n0oo-5e6rArd0,aNpeNt-Arow3osLr:r3wOwaA7wGotni3o.o-aadDlnno,ag:MloADge.0cv2oic0me6s2,-9In10c.6,
11 - 251
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Номер в каталоге | Описание | Производители |
HMC461LP3 | InGaP HBT 1 Watt High IP3 AMPLIFIER | Hittite Microwave Corporation |
HMC461LP3E | InGaP HBT 1 Watt High IP3 AMPLIFIER | Analog Devices |
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