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PDF HMC408LP3E Data sheet ( Hoja de datos )
| Número de pieza | HMC408LP3E | |
| Descripción | GaAs InGaP HBT MMIC 1 WATT POWER AMPLIFIER | |
| Fabricantes | Analog Devices | |
| Logotipo |  |
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v03.0705
11
Typical Applications
The HMC408LP3 / HMC408LP3E is ideal for:
• 802.11a & HiperLAN WLAN
• UNII & Point-to-Point / Multi-Point Radios
• Access Point Radios
Functional Diagram
HMC408LP3 / 408LP3E
GaAs InGaP HBT MMIC 1 WATT
POWER AMPLIFIER, 5.1 - 5.9 GHz
Features
Gain: 20 dB
Saturated Power: +32.5 dBm @ 27% PAE
Single Supply Voltage: +5V
Power Down Capability
3x3 mm Leadless SMT Package
General Description
The HMC408LP3 & HMC408LP3E are 5.1 - 5.9 GHz
high efficiency GaAs InGaP Heterojunction Bipolar
Transistor (HBT) Power Amplifier MMICs which offer
+30 dBm P1dB. The amplifier provides 20 dB of gain,
+32.5 dBm of saturated power, and 27% PAE from a
+5V supply voltage. The input is internally matched
to 50 Ohms while the output requires a minimum of
external components. Vpd can be used for full power
down or RF output power/current control. The amplifier
is packaged in a low cost, 3x3 mm leadless surface
mount package with an exposed base for improved
RF and thermal performance.
11 - 34
Electrical Specifications, TA = +25° C, Vs = 5V, Vpd = 5V
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss*
Output Power for 1 dB Compression
(P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Harmonics, Pout= 30 dBm, F= 5.8 GHz
Noise Figure
Supply Current (Icq)
Control Current (Ipd)
Switching Speed
Min. Typ. Max.
5.7 - 5.9
17 20
0.045
0.055
8
14
Icq= 750 mA
Icq= 500 mA
27
30
27
32.5
40 43
2 fo -50
3 fo -90
6
Vpd= 0V/5V
0.002 / 750
Vpd= 5V
14
tOn, tOff
50
* Output match optimized for 5.7 - 5.9 GHz operation. See Application Circuit herein.
Min.
17
24
36
Typ.
5.1 - 5.9
20
0.045
8
6
27
23
31
39
-50
-90
6
0.002 / 750
14
50
Max.
0.055
Units
GHz
dB
dB/°C
dB
dB
dBm
dBm
dBm
dBc
dBc
dB
mA
mA
ns
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1 page  
v03.0705
Absolute Maximum Ratings
Collector Bias Voltage (Vcc1, Vcc2)
Control Voltage (Vpd)
RF Input Power (RFIN)(Vs = Vpd = +5Vdc)
Junction Temperature
Continuous Pdiss (T = 85 °C)
(derate 72.5 mW/°C above 85 °C)
Thermal Resistance
(junction to ground paddle)
Storage Temperature
Operating Temperature
+5.5 Vdc
+5.5 Vdc
+20 dBm
150 °C
4.71 W
13.8 °C/W
-65 to +150 °C
-40 to +85 °C
Outline Drawing
HMC408LP3 / 408LP3E
GaAs InGaP HBT MMIC 1 WATT
POWER AMPLIFIER, 5.1 - 5.9 GHz
Typical Supply Current
vs. Vs= Vcc1 + Vcc2
Vs (V)
Icq (mA)
4.75
725
5.0 750
5.25
780
Note: Amplifier will operate over full voltage range shown above
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
11
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE
SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED
LAND PATTERN.
Package Information
Part Number
Package Body Material
HMC408LP3
Low Stress Injection Molded Plastic
Lead Finish
Sn/Pb Solder
HMC408LP3E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
MSL Rating
MSL1 [1]
MSL1 [2]
Package Marking [3]
408
XXXX
408
XXXX
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11 - 37
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| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet HMC408LP3E.PDF ] | |
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