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Número de pieza HMC480ST89E
Descripción InGaP HBT GAIN BLOCK MMIC AMPLIFIER
Fabricantes Analog Devices 
Logotipo Analog Devices Logotipo



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HMC480ST89 / 480ST89E
v02.0710
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 5 GHz
8
8 - 122
Typical Applications
The HMC480ST89 / HMC480ST89E is an ideal RF/IF
gain block & LO or PA driver for:
• Cellular / PCS / 3G
• Fixed Wireless & WLAN
• CATV, Cable Modem & DBS
• Microwave Radio & Test Equipment
Features
P1dB Output Power: +19 dBm to 2.5 GHz
Gain: 19 dB @ 1 GHz
16 dB @ 2 GHz
+34 dBm Output IP3
Single Supply: +6V to +8V
Industry Standard SOT89 Package
Included in the HMC-DK001 Designer’s Kits
Functional Diagram
General Description
The HMC480ST89 & HMC480ST89E are InGaP HBT
Gain Block MMIC SMT amplifiers covering DC to
5 GHz and packaged in an industry standard
SOT89. The amplifier can be used as a cascadable
50 Ohm RF/IF gain stage as well as a LO or PA driver
with up to +20 dBm P1dB output power for cellular/3G,
FWA, CATV, microwave radio and test equipment
applications. The HMC480ST89(E) offers 19 dB
of gain with a +34 dBm output IP3 at 1 GHz while
requiring only 82 mA from a single positive supply.
The HMC480ST89(E) InGaP gain blocks offer
excellent output IP3 and flat +19 to +20dBm output
power performance through 5 GHz compared to
equivalent SiGe based products.
Electrical Specifications, Vs= 8.0 V, Rbias= 39 Ohm, TA = +25° C
Parameter
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Reverse Isolation
Output Power for 1 dB Compression (P1dB)
Output Third Order Intercept (IP3)
(Pout= 0 dBm per tone, 1 MHz spacing)
Noise Figure
Supply Current (Icq)
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
4.0 - 5.0 GHz
DC - 5 GHz
DC - 1.0 GHz
1.0 - 5.0 GHz
DC - 1.0 GHz
1.0 - 5.0 GHz
DC - 5 GHz
0.5 - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.5 GHz
3.5 - 5.0 GHz
0.5 - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.5 GHz
3.5 - 5.0 GHz
DC - 4 GHz
4.0 - 5.0 GHz
Min.
17
14
12
10
8
16
15.5
14.5
13
Typ.
19
17
15
13
11
0.008
17
10
17
10
20
20
18.5
17.5
16
34
33
32
30
3.25
4.0
82
Max.
0.016
Units
dB
dB
dB
dB
dB
dB/ °C
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dB
dB
mA
Note: Data taken with broadband bias tee on device output.
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HMC480ST89E pdf
v02.0710
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
RF Input Power (RFIN)(Vcc = +5 Vdc)
Junction Temperature
Continuous Pdiss (T = 85 °C)
(derate 8.25 mW/°C above 85 °C)
Thermal Resistance
(junction to ground paddle)
Storage Temperature
Operating Temperature
+6.0 Vdc
+11 dBm
150 °C
0.536 W
122 °C/W
-65 to +150 °C
-40 to +85 °C
HMC480ST89 / 480ST89E
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 5 GHz
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
8
Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL:
MOLDING COMPOUND MP-180S OR EQUIVALENT.
2. LEAD MATERIAL: Cu w/ Ag SPOT PLATING.
3. LEAD PLATING: 100% MATTE TIN.
4. DIMENSIONS ARE IN INCHES [MILLIMETERS]
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
Package Information
Part Number
Package Body Material
HMC480ST89
Low Stress Injection Molded Plastic
Lead Finish
Sn/Pb Solder
HMC480ST89E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
MSL Rating
MSL1 [1]
MSL1 [2]
Package Marking [3]
H480
XXXX
H480
XXXX
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