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PDF HMC-MDB172 Data sheet ( Hoja de datos )
| Número de pieza | HMC-MDB172 | |
| Descripción | GaAs MMIC I/Q MIXER | |
| Fabricantes | Analog Devices | |
| Logotipo |  |
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v02.0209
Typical Applications
This HMC-MDB172 is ideal for:
• Point-to-Point Radios
3 • VSAT
• Military Radar, ECM & EW
• Test & Measurement Equipment
• SATCOM
HMC-MDB172
GaAs MMIC I/Q MIXER
19 - 33 GHz
Features
Wide IF Bandwidth: DC - 5 GHz
High Image Rejection: 25 dB
High LO to RF Isolation: 35 dB
Passive: No DC Bias Required
Die Size: 2.2 x 2.0 x 0.1 mm
Functional Diagram
General Description
The HMC-MDB172 is a monolithic I/Q Mixer which
can be used as either an image reject mixer (IRM) or
a single sideband upconverter. This passive MMIC
is fabricated with GaAs Heterojunction Bipolar
Transistor (HBT) Shottky diode technology. For
downconversion applications, an external quadrature
hybrid can be used to select the desired sideband
while rejecting image signals. All bond pads and the
die backside are Ti/Au metallized and the Shottky
devices are fully passivated for reliable operation.
The HMC-MDB172 I/Q MMIC Mixer is compatible
with conventional die attach methods, as well as
thermocompression and thermosonic wire bonding,
making it ideal for MCM and hybrid microcircuit
applications. All data shown herein is measured with
the chip in a 50 Ohm environment and contacted with
RF probes.
Electrical Specifications,* TA = 25 °C, IF = 3 GHz, LO = +16 dBm
Parameter
Min.
Typ.
Frequency Range, RF & LO
19 - 33
Frequency Range, IF
DC - 5
Conversion Loss with External Hybrid
8
Image Rejection
20 25
1 dB Compression (Input)
8
LO to RF Isolation
30 35
LO to IF Isolation
18 23
RF to IF Isolation
19 25
IP3 (Input)
17
*Unless otherwise indicated, all measurements are from probed die
Max.
11
Units
GHz
GHz
dB
dB
dBm
dB
dB
dB
dBm
3 - 166
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1 page  
v02.0209
HMC-MDB172
GaAs MMIC I/Q MIXER
19 - 33 GHz
Application Circuits
Application circuit 1 shows the mixer equivalent circuit. Application Circuit 2 depicts the mixer with a 90° hybrid used to
achieve signal image rejection. All RF parameters are specified with an ideal 90° hybrid on IF output ports. Conversion
loss is measured (on wafer) at IF1 and/or IF2 (Application Circuit 1) with the second IF port terminated into 50 ohms.
Three dB is then added to compensate for an ideal hybrid. The IP3 is stated as an input IP3 number and is obtained
via a two-tone measurement.
Application Circuit 1
3
Application Circuit 2
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3 - 169
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet HMC-MDB172.PDF ] | |
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