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Número de pieza | HMC-MDB171 | |
Descripción | GaAs MMIC I/Q MIXER | |
Fabricantes | Analog Devices | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de HMC-MDB171 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! v02.0713
Typical Applications
2 This HMC-MDB171 is ideal for:
• Point-to-Point Radios
• Test & Measurement Equipment
• SATCOM
• Radar
Functional Diagram
HMC-MDB171
GaAs MMIC I/Q MIXER
35 - 45 GHz
Features
Wide IF Bandwidth: DC - 5 GHz
High Image Rejection: 25 dB
High LO to RF Isolation: 35 dB
Passive: No DC Bias Required
Die Size: 1.5 x 2.0 x 0.1 mm
General Description
The HMC-MDB171 is a monolithic I/Q Mixer which
can be used as either an image reject mixer (IRM) or
a single sideband upconverter. This passive MMIC
mixer is fabricated with GaAs Heterojunction Bipolar
Transistor (HBT) Shottky diode technology. For
downconversion applications, an external quadrature
hybrid can be used to select the desired sideband
while rejecting image signals. All bond pads and the
die backside are Ti/Au metallized. The HMC-MDB171
I/Q MMIC Mixer is compatible with conventional die
attach methods, as well as thermocompression and
thermosonic wire bonding, making it ideal for MCM and
hybrid microcircuit applications. All data shown herein
is measured with the chip in a 50 Ohm environment
and contacted with RF probes.
2-1
Electrical Specifications,* TA = 25 °C, IF = 3 GHz, LO = +16 dBm
Parameter
Min.
Typ.
Frequency Range, RF & LO
35 - 45
Frequency Range, IF
DC - 5
Conversion Loss with External Hybrid
8
Conversion Loss with out External Hybrid
12.5
1 dB Compression (Input)
8
Image Rejection
20 25
LO to RF Isolation
30 35
LO to IF Isolation
15 20
RF to IF Isolation
20 25
IP3 (Input)
17
*Unless otherwise indicated, all measurements are from probed die
Max.
11
Units
GHz
GHz
dB
dB
dB
dB
dB
dB
dB
dBm
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1 page v02.0713
HMC-MDB171
GaAs MMIC I/Q MIXER
35 - 45 GHz
Application Circuits
Application circuit 1 shows the mixer equivalent circuit. Application Circuit 2 depicts the mixer with a 90° hybrid used to
achieve signal image rejection. All RF parameters are specified with an ideal 90° hybrid on IF output ports. Conversion
loss is measured (on wafer) at IF1 and/or IF2 (Application Circuit 1) with the second IF port terminated into 50 ohms.
Three dB is then added to compensate for an ideal hybrid. The IP3 is stated as an input IP3 number and is obtained
via a two-tone measurement.
Application Circuit 1
2
Application Circuit 2
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2-4
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet HMC-MDB171.PDF ] |
Número de pieza | Descripción | Fabricantes |
HMC-MDB171 | GaAs MMIC I/Q MIXER | Analog Devices |
HMC-MDB172 | GaAs MMIC I/Q MIXER | Analog Devices |
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