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PDF HMC7912 Data sheet ( Hoja de datos )
| Número de pieza | HMC7912 | |
| Descripción | I/Q Upconverter | |
| Fabricantes | Analog Devices | |
| Logotipo |  |
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Data Sheet
21 GHz to 24 GHz,
GaAs, MMIC, I/Q Upconverter
HMC7912
FEATURES
GENERAL DESCRIPTION
Conversion gain: 15 dB typical
Sideband rejection: 22 dBc typical
Input power for 1 dB compression (P1dB): 4 dBm typical
Output third-order intercept (OIP3): 33 dBm typical
2× local oscillator (LO) leakage at RFOUT: 5 dBm typical
2× LO leakage at the intermediate frequency (IF) input:
−35 dBm typical
RF return loss: 15 dB typical
LO return loss: 15 dB typical
32-lead, 5 mm × 5 mm LFCSP package
APPLICATIONS
Point to point and point to multipoint radios
Military radars, electronic warfare (EW), and electronic
intelligence (ELINT)
Satellite communications
Sensors
The HMC7912 is a compact, gallium arsenide (GaAs), pseudo-
morphic (pHEMT), monolithic microwave integrated circuit
(MMIC) upconverter in a RoHS compliant, low stress, injection
molded plastic LFCSP package that operates from 21 GHz to
24 GHz. This device provides a small signal conversion gain of
15 dB with 22 dBc of sideband rejection. The HMC7912 uses a
variable gain amplifier preceded by an in-phase/quadrature (I/Q)
mixer that is driven by an active 2× LO multiplier. IF1 and IF2
mixer inputs are provided, and an external 90° hybrid is needed to
select the required sideband. The I/Q mixer topology reduces
the need for filtering of the unwanted sideband. The HMC7912
is a much smaller alternative to hybrid style single sideband (SSB)
upconverter assemblies, and it eliminates the need for wire
bonding by allowing the use of surface-mount manufacturing
techniques.
FUNCTIONAL BLOCK DIAGRAM
32 31 30 29 28 27 26 25
VGMIX 1
NIC 2
NIC 3
NIC 4
NIC 5
GND 6
LOIN 7
GND 8
HMC7912
2×
24 NIC
23 NIC
22 VDRF2
21 VCTL1
20 VCTL2
19 VDRF3
18 VDRF4
17 NIC
9 10 11 12 13 14 15 16
EPAD
Figure 1.
Rev. A
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responsibilityisassumedbyAnalogDevices for itsuse,nor foranyinfringementsofpatentsor other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarksandregisteredtrademarksarethepropertyoftheirrespectiveowners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
©2016 Analog Devices, Inc. All rights reserved.
Technical Support
www.analog.com
1 page  
HMC7912
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter
Drain Bias Voltage
VDRFx, VDLOx, VREF, VDET
Gate Bias Voltage
VGRF
VCTLx, VESD
VGMIX
LO Input Power
IF Input Power
Maximum Junction Temperature
Storage Temperature Range
Operating Temperature Range
Reflow Temperature
ESD Sensitivity (HBM)
Rating
5.5 V
−3 V to 0 V
−7 V to 0 V
−2 V to 0 V
10 dBm
10 dBm
175°C
−65°C to +150°C
−40°C to +85°C
260°C
250 V (Class 1A)
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
Data Sheet
THERMAL RESISTANCE
θJA is specified for the worst case conditions, that is, a device
soldered in a circuit board for surface-mount packages. The θJA
values in Table 3 assume a 4-layer JEDEC standard board with
zero airflow.
Table 3. Thermal Resistance
Package Type
32-Lead LFCSP
θJA
31.66
θJC
37.6
Unit
°C/W
ESD CAUTION
Rev. A | Page 4 of 24
5 Page 
HMC7912
Data Sheet
Data taken as SSB upconverter with external IF 90° hybrid at the IF ports, IF = 2 GHz.
20 20
18 18
16 16
14 14
12 12
10
8
TA = +85°C
TA = +25°C
TA = –40°C
6
21.0 21.5 22.0 22.5 23.0 23.5 24.0
RF FREQUENCY (GHz)
Figure 33. Conversion Gain vs. RF Frequency at Various Temperatures,
LO = 4 dBm
20
16
12
8
4
VCTLx = –5.0V
VCTLx = –4.3V
VCTLx = –3.5V
0
VCTLx = –4.8V
VCTLx = –4.5V
VCTLx = –4.0V
VCTLx = –3.8V
VCTLx = –3.3V
VCTLx = –3.0V
–4
–8
VCTLx = –2.8V
VCTLx = –2.5V
VCTLx = –2.3V
VCTLx = –2.0V
VCTLx = –1.8V
VCTLx = –1.5V
VCTLx = –1.3V
VCTLx = –1.0V
–12
–16
–20
21.0 21.5 22.0 22.5 23.0 23.5 24.0
RF FREQUENCY (GHz)
Figure 34. Conversion Gain vs. RF Frequency at Various Control Voltages,
LO = 4 dBm
40
TA = +85°C
35 TA = +25°C
TA = –40°C
30
25
20
15
10
5
0
21.0 21.5 22.0 22.5 23.0 23.5 24.0
RF FREQUENCY (GHz)
Figure 35. Sideband Rejection vs. RF Frequency at Various Temperatures,
LO = 4 dBm
10
LO = 0dBm
8
LO = 2dBm
LO = 4dBm
LO = 6dBm
6
21.0 21.5 22.0 22.5 23.0 23.5 24.0
RF FREQUENCY (GHz)
Figure 36. Conversion Gain vs. RF Frequency at Various LO Powers
20
15
10
5
0
–5
–10
RF = 21GHz
–15
RF = 22GHz
RF = 23GHz
RF = 24GHz
–20
–5.0 –4.5 –4.0 –3.5 –3.0 –2.5 –2.0 –1.5 –1.0
CONTROL VOLTAGE (V)
Figure 37. Conversion Gain vs. Control Voltage at Various RF Frequencies,
LO = 4 dBm
40
35
30
25
20
15
10
LO = 0dBm
5
LO = 2dBm
LO = 4dBm
LO = 6dBm
0
21.0 21.5 22.0 22.5 23.0 23.5 24.0
RF FREQUENCY (GHz)
Figure 38. Sideband Rejection vs. RF Frequency at Various LO Powers
Rev. A | Page 10 of 24
11 Page | ||
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