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HMC-C200 PDF даташит

Спецификация HMC-C200 изготовлена ​​​​«Analog Devices» и имеет функцию, называемую «DIELECTRIC RESONATOR OSCILLATOR MODULE».

Детали детали

Номер произв HMC-C200
Описание DIELECTRIC RESONATOR OSCILLATOR MODULE
Производители Analog Devices
логотип Analog Devices логотип 

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HMC-C200 Даташит, Описание, Даташиты
HMC-C200
v06.0612
DIELECTRIC RESONATOR OSCILLATOR MODULE
8.0 - 8.3 GHz
Typical Applications
The HMC-C200 DRO Module is ideal for:
• Test & Measurement Equipment
• Lab Instrumentation
• Industrial / Medical Equipment
• Military, EW, ECM & Communications
Functional Diagram
Features
Tuning Frequency: 8.0 - 8.3 GHz
Low SSB Phase Noise: -122 dBc/Hz @ 10 kHz Offset
Single Positive Supply: +6 to +15V @ 116 mA
Internal Voltage Regulator
Internal Buffer Amplifier
High Output Power: +14.5 dBm
-40 °C to +85 °C Operating Temperature
General Description
The HMC-C200 is a high performance dielectric
resonator oscillator (DRO) that incorporates Hittite’s
ultra-low phase noise technology and provides
-122 dBc/Hz SSB phase noise at 10 kHz offset.
The output buffer also provides 14.5 dBm of output
power. Internal temperature compensation allows this
DRO to operate over a temperature range of -40°C
to + 85°C with a frequency drift of only 2ppm/°C. The
Vtune port accepts an analog tuning voltage from
+2 to +12V and provides a range of ±1 MHz from the
center frequency. The DRO is packaged in a small,
moisture sealed 1.5” x 1.5” (36 x 36 mm) module with
a field replaceable SMA Connector. The HMC-C200
can be used as a drop-in module if the SMA connector
is not used.
Electrical Specifications, TA = +25° C, Frequency = 8.2 GHz, VDC = +6.5V
Parameter
Frequency Range
Frequency Accuracy
Power Output, Center Frequency
SSB Phase Noise @ 1 kHz Offset, Center Frequency
SSB Phase Noise @ 10 kHz Offset, Center Frequency
SSB Phase Noise @ 100 kHz Offset, Center Frequency
SSB Phase Noise @ 1 MHz Offset, Center Frequency
Tune Voltage (VT)
Electric Tuning Range
2nd Harmonic (2Fo)
3rd Harmonic (3Fo)
Min.
8.0
12
-117
2
Typ.
8.2
±250
13.5
-95
-122
-140
-150
±1
-28
-35
Max.
8.3
12
Units
GHz
kHz
dBm
dBc/Hz
dBc/Hz
dBc/Hz
dBc/Hz
V
MHz
dBc
dBc
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HMC-C200 Даташит, Описание, Даташиты
HMC-C200* PRODUCT PAGE QUICK LINKS
Last Content Update: 02/23/2017
COMPARABLE PARTS
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DOCUMENTATION
Data Sheet
HMC-C200 Data Sheet
REFERENCE MATERIALS
Technical Articles
Hittite Launches Industry Leading Commercial DRO
Product Line
DESIGN RESOURCES
HMC-C200 Material Declaration
PCN-PDN Information
Quality And Reliability
Symbols and Footprints
DISCUSSIONS
View all HMC-C200 EngineerZone Discussions.
SAMPLE AND BUY
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TECHNICAL SUPPORT
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number.
DOCUMENT FEEDBACK
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HMC-C200 Даташит, Описание, Даташиты
HMC-C200
v06.0612
DIELECTRIC RESONATOR OSCILLATOR MODULE
8.0 - 8.3 GHz
Electrical Specifications (Continued)
Parameter
Frequency Pushing
Frequency Pulling (into 2.0:1 VSWR)
Output Return Loss
Frequency Drift Rate (Temperature)
Voltage Supply (VDC)
Supply Current @ VDC = +6.5V
Frequency Drift vs. Time @ 25°C
Min.
Typ.
Max.
Units
5 kHz/V
5 kHz pp
12 dB
2 ppm/°C
6 15 V
116 mA
1 ppm/year
Phase Noise vs. Temperature @ 8.2 GHz
0
-20
-40 + 25 C
-60
- 40 C
+ 85 C
-80
-100
-120
-140
-160
-180
102
103 104 105
OFFSET FREQUENCY (Hz)
106
Output Power vs. Temperature @ 8.2 GHz
20
18
16
14
12
10
-60 -40 -20
0
20 40 60
TEMPREATURE (C)
80 100
Output Frequency vs. Temperature
8.201
8.2005
8.2
8.1995
8.199
-60 -40 -20 0 20 40 60
TEMPERATURE (°C)
80 100
VDC Current vs. Temperature @ 8.2 GHz
200
180
160
140
120
100
80
60
40
20
0
-50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90
TEMPERATURE (C)
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Номер в каталогеОписаниеПроизводители
HMC-C200DIELECTRIC RESONATOR OSCILLATOR MODULEAnalog Devices
Analog Devices

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