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PDF HMC7586 Data sheet ( Hoja de datos )
| Número de pieza | HMC7586 | |
| Descripción | E-Band I/Q Downconverter | |
| Fabricantes | Analog Devices | |
| Logotipo |  |
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Data Sheet
71 GHz to 76 GHz,
E-Band I/Q Downconverter
HMC7586
FEATURES
GENERAL DESCRIPTION
Conversion gain: 12.5 dB typical
Image rejection: 28 dBc typical
Noise figure: 5 dB typical
Input power for 1 dB compression (P1dB): −9 dBm typical
Input third-order intercept (IP3): −1 dBm typical
Input second-order intercept (IP2): 20 dBm typical
6× local oscillator (LO) leakage at RFIN: −40 dBm typical
1× LO leakage at IFOUT: −50 dBm typical
Radio frequency (RF) return loss: 5 dB typical
LO return loss: 20 dB typical
Die size: 3.599 mm × 2.199 mm × 0.05 mm
APPLICATIONS
E-band communication systems
High capacity wireless backhauls
Test and measurement
The HMC7586 is an integrated E-band gallium arsenide (GaAs),
monolithic microwave integrated circuit (MMIC) in-phase/
quadrature (I/Q) downconverter chip that operates from 71 GHz to
76 GHz. The HMC7586 provides a small signal conversion gain
of 12.5 dB with 28 dBc of image rejection across the frequency
band. The device uses a low noise amplifier followed by an
image rejection mixer that is driven by a 6× LO multiplier.
The image rejection mixer eliminates the need for a filter
following the low noise amplifier. Differential I and Q mixer
outputs are provided for direct conversion applications.
Alternatively, the outputs can be combined using an external
90° hybrid and two external 180° hybrids for single-sideband
applications. All data includes the effect of a 1 mil gold wire
wedge bond on the intermediate frequency (IF) ports.
FUNCTIONAL BLOCK DIAGRAM
IFIP 5
6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21
IFIN 4
6×
IFQN 3
IFQP 2
HMC7586
1
RFIN
22
23
24
40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25
Figure 1.
Rev. A
Document Feedback
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarksandregisteredtrademarksarethepropertyoftheirrespectiveowners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
©2016 Analog Devices, Inc. All rights reserved.
Technical Support
www.analog.com
1 page  
HMC7586
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter
Drain Bias Voltage
VDAMP1, VDAMP2
VDMULT
VDLNA1, VDLNA2, VDLNA3, VDLNA4
Gate Bias Voltage
VGAMP
VGX2, VGX3
VGLNA1, VGLNA2, VGLNA3, VGLNA4
VGMIX
LO Input Power
Maximum Junction Temperature (to
Maintain 1 Million Hours Mean Time to
Failure (MTTF))
Storage Temperature Range
Operating Temperature Range
ESD Sensitivity, Human Body Model (HBM)
Rating
4.5 V
3V
4.5 V
−3 V to 0 V
−3 V to 0 V
−3 V to 0 V
−3 V to 0 V
10 dBm
175°C
−65°C to +150°C
−55°C to +85°C
100 V (Class 0)
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
Data Sheet
THERMAL RESISTANCE
Table 3. Thermal Resistance
Package Type
40-Pad Bare Die [CHIP]
θJC1
61.7
Unit
°C/W
1 Based on ABLEBOND® 84-1LMIT as die attach epoxy with a thermal
conductivity of 3.6 W/mK.
ESD CAUTION
Rev. A | Page 4 of 55
5 Page 
HMC7586
40
36
32 TA = +85°C
TA = +25°C
28 TA = –55°C
24
20
16
12
8
4
0
71.0 71.5 72.0 72.5 73.0 73.5 74.0 74.5 75.0 75.5 76.0
RF FREQUENCY (GHz)
Figure 27. Input IP2 vs. RF Frequency at Various Temperatures,
RFIN = −20 dBm, LO = 2 dBm, IF = 1000 MHz, VDLNA = 4 V
40
36 LO = –4dBm
LO = –2dBm
32 LO = 0dBm
LO = +2dBm
28 LO = +4dBm
LO = +6dBm
24 LO = +8dBm
20
16
12
8
4
0
71.0 71.5 72.0 72.5 73.0 73.5 74.0 74.5 75.0 75.5 76.0
RF FREQUENCY (GHz)
Figure 28. Input IP2 vs. RF Frequency at Various LO Powers,
RFIN = −20 dBm, IF = 1000 MHz, VDLNA = 4 V
40
36
32
28
24
20
16
12
8
4
0
71.0
71.5
72.0
IDLNA = 5mA
IDLNA = 10mA
IDLNA = 15mA
IDLNA = 20mA
IDLNA = 25mA
IDLNA = 30mA
IDLNA = 35mA
IDLNA = 40mA
IDLNA = 45mA
IDLNA = 50mA
72.5 73.0 73.5 74.0 74.5 75.0 75.5 76.0
RF FREQUENCY (GHz)
Figure 29. Input IP2 vs. RF Frequency at Various IDLNA Values,
RFIN = −20 dBm, LO = 2 dBm, IF = 1000 MHz, VDLNA = 4 V
Data Sheet
40
36
32 TA = +85°C
TA = +25°C
28 TA = –55°C
24
20
16
12
8
4
0
71.0 71.5 72.0 72.5 73.0 73.5 74.0 74.5 75.0 75.5 76.0
RF FREQUENCY (GHz)
Figure 30. Input IP2 vs. RF Frequency at Various Temperatures,
RFIN = −20 dBm, LO = 2 dBm, IF = 1000 MHz, VDLNA = 3 V
40
36
LO = –4dBm
LO = –2dBm
32 LO = 0dBm
LO = +2dBm
28 LO = +4dBm
LO = +6dBm
24 LO = +8dBm
20
16
12
8
4
0
71.0 71.5 72.0 72.5 73.0 73.5 74.0 74.5 75.0 75.5 76.0
RF FREQUENCY (GHz)
Figure 31. Input IP2 vs. RF Frequency at Various LO Powers,
RFIN = −20 dBm, IF = 1000 MHz, VDLNA = 3 V
40
IDLNA = 5mA
IDLNA = 30mA
36
IDLNA = 10mA
IDLNA = 15mA
IDLNA = 35mA
IDLNA = 40mA
32
IDLNA = 20mA
IDLNA = 25mA
IDLNA = 45mA
IDLNA = 50mA
28
24
20
16
12
8
4
0
71.0 71.5 72.0 72.5 73.0 73.5 74.0 74.5 75.0 75.5 76.0
RF FREQUENCY (GHz)
Figure 32. Input IP2 vs. RF Frequency at Various IDLNA Values,
RFIN = −20 dBm, LO = 2 dBm, IF = 1000 MHz, VDLNA = 3 V
Rev. A | Page 10 of 55
11 Page | ||
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| PDF Descargar | [ Datasheet HMC7586.PDF ] | |
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