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HMC435AMS8GE PDF даташит

Спецификация HMC435AMS8GE изготовлена ​​​​«Analog Devices» и имеет функцию, называемую «SPDT NON-REFLECTIVE SWITCH».

Детали детали

Номер произв HMC435AMS8GE
Описание SPDT NON-REFLECTIVE SWITCH
Производители Analog Devices
логотип Analog Devices логотип 

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HMC435AMS8GE Даташит, Описание, Даташиты
HMC435AMS8G / 435AMS8GE
v00.0213
SPDT NON-REFLECTIVE
SWITCH, DC - 4 GHz
Typical Applications
The HMC435AMS8G(E) is ideal for:
• Basestations & Repeaters
• Cellular/3G and WiMAX/4G
• Infrastructure and Access Points
• CATV/CMTS
• Test Instrumentation
Features
High Isolation: 62 dB @ 1 GHz
52 dB @ 2 GHz
Single Positive Control: 0/+5V
Input IP3: 54 dBm
Non-Reflective Design
Ultra Small MSOP-86 Package: 14.8 mm2
Functional Diagram
General Description
The HMC435AMS8G(E) is a non-reflective DC to
4 GHz GaAs MESFET SPDT switch in a low cost 8
lead MSOP8G surface mount package with exposed
ground paddle. The switch is ideal for cellular/3G and
WiMAX/4G applications yielding up to 60 dB isolation,
low 0.8 dB insertion loss and +50 dBm input IP3. Power
handling is excellent up through the 3.8 GHz WiMAX
band with the switch offering a P1dB compression of
+30 dBm. On-chip circuitry allows positive voltage
control of 0/+5 Volts at very low DC currents.
Electrical Specifications, TA = +25° C, Vctl = 0/+5 Vdc, 50 Ohm System
Insertion Loss
Parameter
Frequency
DC - 2.5 GHz
DC - 3.6 GHz
DC - 4.0 GHz
Min.
Typ.
0.8
1.0
1.2
Isolation (RFC to RF1/RF2)
Return Loss (On State)
DC - 1.0 GHz
DC - 2.0 GHz
DC - 2.5 GHz
DC - 3.6 GHz
DC - 4.0 GHz
DC - 2.5 GHz
DC - 3.6 GHz
DC - 4.0 GHz
56 62
46 52
43 48
37 42
30 40
15 23
13 17
11 14
Return Loss (Off State)
0.5 - 4.0 GHz
16 21
Input Power for 1 dB Compression
0.5 - 4.0 GHz
27 30
Input Third Order Intercept
(Two-Tone Input Power = +7 dBm Each Tone)
Switching Speed
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
0.5 - 1.0 GHz
0.5 - 2.5 GHz
0.5 - 4.0 GHz
DC - 4.0 GHz
48 54
45 53
41 51
40
60
Max.
1.0
1.5
1.8
Units
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
ns
ns
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HMC435AMS8GE Даташит, Описание, Даташиты
HMC435A* PRODUCT PAGE QUICK LINKS
Last Content Update: 02/23/2017
COMPARABLE PARTS
View a parametric search of comparable parts.
EVALUATION KITS
HMC435AMS8G Evaluation Board
DOCUMENTATION
Data Sheet
HMC435A Data Sheet
TOOLS AND SIMULATIONS
HMC435A S-Parameter
REFERENCE MATERIALS
Quality Documentation
Semiconductor Qualification Test Report: PHEMT-J (QTR:
2013-00285)
DESIGN RESOURCES
HMC435A Material Declaration
PCN-PDN Information
Quality And Reliability
Symbols and Footprints
DISCUSSIONS
View all HMC435A EngineerZone Discussions.
SAMPLE AND BUY
Visit the product page to see pricing options.
TECHNICAL SUPPORT
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number.
DOCUMENT FEEDBACK
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HMC435AMS8GE Даташит, Описание, Даташиты
v00.0213
HMC435AMS8G / 435AMS8GE
SPDT NON-REFLECTIVE
SWITCH, DC - 4 GHz
Insertion Loss
0
-1
-2
-3
-4
-5
0 0.5 1 1.5 2 2.5 3 3.5 4
FREQUENCY (GHz)
+ 25C
+ 85C
- 40C
Isolation Between
Ports RFC and RF1 / RF2
0
-10
-20
-30
-40
-50
-60
-70
-80
0 0.5 1 1.5 2 2.5 3 3.5 4
FREQUENCY (GHz)
RF1 RF2
0.1 and 1 dB Input Compression Point
35
30
25
20
15
0 0.5 1 1.5 2 2.5 3 3.5 4
FREQUENCY (GHz)
1 dB Compression Point
0.1 dB Compression Point
Return Loss
0
-5
-10
-15
-20
-25
-30
0 0.5 1 1.5 2 2.5 3 3.5 4
FREQUENCY (GHz)
RFC
RF1, RF2 OFF
RF1, RF2 ON
Isolation Between Ports RF1 and RF2
0
-10
-20
-30
-40
-50
-60
-70
-80
0 0.5 1 1.5 2 2.5 3 3.5 4
FREQUENCY (GHz)
RFC - RF1 ON
RFC - RF2 ON
Input Third Order Intercept Point
60
58
56
54
52
50
48
46
44
42
40
0 0.5 1 1.5 2 2.5 3 3.5 4
FREQUENCY (GHz)
-40 C
+25 C
+85 C
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2










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Номер в каталогеОписаниеПроизводители
HMC435AMS8GSPDT NON-REFLECTIVE SWITCHAnalog Devices
Analog Devices
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Analog Devices

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