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PDF HMC349AMS8G Data sheet ( Hoja de datos )
| Número de pieza | HMC349AMS8G | |
| Descripción | SPDT Switch | |
| Fabricantes | Analog Devices | |
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Data Sheet
High Isolation, Nonreflective,
GaAs, SPDT Switch,100 MHz to 4 GHz
HMC349AMS8G
FEATURES
Nonreflective, 50 Ω design
High isolation: 57 dB to 2 GHz
Low insertion loss: 0.9 dB to 2 GHz
High input linearity
1 dB power compression (P1dB): 34 dBm typical
Third-order intercept (IP3): 52 dBm typical
High power handling
33.5 dBm through path
26.5 dBm terminated path
Single positive supply: 3 V to 5 V
CMOS-/TTL-compatible control
All off state control
8-lead mini small outline package with exposed pad
(MINI_SO_EP)
APPLICATIONS
Cellular/4G infrastructure
Wireless infrastructure
Mobile radios
Test equipment
GENERAL DESCRIPTION
The HMC349AMS8G is a gallium arsenide (GaAs), pseudo-
morphic high electron mobility transistor (PHEMT), single-pole,
double throw (SPDT) switch specified from 100 MHz to 4 GHz.
The HMC349AMS8G is well suited for cellular infrastructure
applications by yielding high isolation of 57 dB, low insertion
loss of 0.9 dB, high input IP3 of 52 dBm, and high input P1dB
of 34 dBm.
FUNCTIONAL BLOCK DIAGRAM
RF2
HMC349AMS8G
VDD
RFC
50Ω
EN
CTRL
50Ω GND
RF1
Figure 1.
The HMC349AMS8G operates with a single positive supply
voltage from 3 V to 5 V and provides a CMOS-/TTL-compatible
control interface.
The HMC349AMS8G comes in an 8-lead mini small outline
package with an exposed pad.
Rev. C
Document Feedback
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibilityisassumedbyAnalogDevices for itsuse,nor foranyinfringementsofpatentsor other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarksandregisteredtrademarksarethepropertyoftheirrespectiveowners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
©2016 Analog Devices, Inc. All rights reserved.
Technical Support
www.analog.com
1 page  
HMC349AMS8G
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter
Supply Voltage
Digital Control Input Voltage
RF Input Power (f = 250 MHz to 4 GHz)1
Through Path
VDD = 3 V, TCASE = 85°C
VDD = 3 V, TCASE = 125°C
VDD = 5 V, TCASE = 85°C
VDD = 5 V, TCASE = 125°C
Terminated Path
VDD = 3 V to 5 V, TCASE = 85°C
VDD = 3 V to 5 V, TCASE = 125°C
Hot Switching
VDD = 3 V to 5 V, TCASE = 85°C
VDD = 3 V to 5 V, TCASE = 125°C
Temperature
Junction Temperature (TJ)
Case Temperature Range (TCASE)
Storage Temperature Range
Reflow2 (MSL1 Rating)
HMC349AMS8G
HMC349AMS8GE
Junction to Case Thermal Resistance (θJC)
Through Path
Terminated Path
ESD Sensitivity
Human Body Model (HBM)
Rating
+7 V
−1 V to VDD + 1 V
31.5 dBm
26 dBm
33.5 dBm
28 dBm
26.5 dBm
21 dBm
30 dBm
24.5 dBm
150°C
−40°C to +125°C
−65°C to +150°C
235°C
260°C
67.1°C/W
144.2°C/W
250 V (Class 1A)
1 For power derating at frequencies less than 250 MHz, see Figure 2.
2 See the Ordering Guide for more information.
Data Sheet
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
Only one absolute maximum rating can be applied at any one time.
2
0
–2
–4
–6
–8
–10
0.01
0.1
1
FREQUENCY (GHz)
Figure 2. Power Derating at Frequencies Less Than 250 MHz
ESD CAUTION
Rev. C | Page 4 of 10
5 Page 
HMC349AMS8G
OUTLINE DIMENSIONS
3.10
3.00 2.18
2.90 1.98
1.78
3.10
3.00
2.90
8
1
5 5.05
4.90
4.75
4
0.65 TOP VIEW
BSC
1.95 BSC
0.94
0.86
0.78
SIDE VIEW
1.10
MAX
0.13
MAX
COPLANARITY
0.10
0.40
0.33
0.25
EXPOSED
PAD
1.52
1.32
1.12
BOTTOM VIEW
FOR PROPER CONNECTION OF
THE EXPOSED PAD, REFER TO
THE PIN CONFIGURATION AND
FUNCTION DESCRIPTIONS
SECTION OF THIS DATA SHEET.
0.25 GAGE
PLANE
6°
0°
END VIEW
0.70
0.55
0.40
0.23
0.08
0.95
REF
COMPLIANT TO JEDEC STANDARDS MO-187-AA-T
Figure 19. 8-Lead Mini Small Outline Package with Exposed Pad [MINI_SO_EP]
(RH-8-3)
Dimensions shown in millimeters
Data Sheet
ORDERING GUIDE
Model1
HMC349AMS8G
Temperature Range
−40°C to +125°C
HMC349AMS8GTR
−40°C to +125°C
HMC349AMS8GE
−40°C to +125°C
HMC349AMS8GETR −40°C to +125°C
EV1HMC349AMS8G
1 E = RoHS-Compliant Part.
2 See the Absolute Maximum Ratings section.
3 XXXX is the 4-digit lot number.
MSL Rating2
MSL1
MSL1
MSL1
MSL1
Package Description
8-Lead Mini Small Outline Package
with Exposed Pad [MINI_SO_EP]
8-Lead Mini Small Outline Package
with Exposed Pad [MINI_SO_EP]
8-Lead Mini Small Outline Package
with Exposed Pad [MINI_SO_EP]
8-Lead Mini Small Outline Package
with Exposed Pad [MINI_SO_EP]
Evaluation Board
Package Option
RH-8-3
RH-8-3
RH-8-3
RH-8-3
Branding3
H349A
XXXX
H349A
XXXX
H349A
XXXX
H349A
XXXX
©2016 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D15025-0-12/16(B)
Rev. C | Page 10 of 10
11 Page | ||
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