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PDF HMC558A Data sheet ( Hoja de datos )
| Número de pieza | HMC558A | |
| Descripción | GaAs MMIC Fundamental Mixer | |
| Fabricantes | Analog Devices | |
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Data Sheet
FEATURES
Conversion loss: 7.5 dB typical at 5.5 GHz to 10 GHz
Local oscillator (LO) to radio frequency (RF) isolation: 45 dB
typical at 5.5 GHz to 10 GHz
LO to intermediate frequency (IF) isolation: 45 dB typical at
10 GHz to 14 GHz
Input third-order intercept (IIP3): 21 dBm typical at 10 GHz
to 14 GHz
Input P1dB: 11.5 dBm typical at 10 GHz to 14 GHz
Input second-order intercept (IIP2): 55 dBm typical at 10 GHz
to 14 GHz
Passive double-balanced topology
Wide IF bandwidth: dc to 6 GHz
12-lead ceramic leadless chip carrier package
APPLICATIONS
Point to point microwave radios
Point to multipoint radios
Military end use
Instrumentation, automatic test equipment (ATE), and sensors
GENERAL DESCRIPTION
The HMC558A is a general-purpose, double-balanced mixer in a
leadless RoHS compliant SMT package that can be used as an
upconverter or downconverter between 5.5 GHz and 14 GHz.
This mixer is fabricated in a gallium arsenide (GaAs) metal semi-
conductor field effect transistor (MESFET) process, and requires
no external components or matching circuitry.
5.5 GHz to 14 GHz,
GaAs MMIC Fundamental Mixer
HMC558A
FUNCTIONAL BLOCK DIAGRAM
HMC558A
LO RF
IF
Figure 1.
The HMC558A provides excellent LO to RF and LO to IF isolation
due to optimized balun structures, and operates with LO drive
levels as low as 9 dBm. The RoHS compliant HMC558A eliminates
the need for wire bonding, and is compatible with high volume
surface-mount manufacturing techniques.
Rev. 0
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responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
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One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
©2016 Analog Devices, Inc. All rights reserved.
Technical Support
www.analog.com
1 page  
HMC558A
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter
RF Input Power
LO Input Power
IF Input Power
IF Source/Sink Current
Maximum Junction Temperature
Continuous PDISS (T = 85°C) (Derate
5.5 mW/°C Above 85°C)
Operating Temperature Range
Storage Temperature Range
Lead Temperature Range (Soldering 60 sec)
Electrostatic Discharge (ESD) Sensitivity
Human Body Model (HBM)
Field Induced Charged Device Model
(FICDM)
Rating
25 dBm
25 dBm
25 dBm
3 mA
175°C
495 mW
−40°C to +85°C
−65°C to +150°C
−65°C to +150°C
2500 V (Class 2)
1000 V (Class C5)
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
Data Sheet
THERMAL RESISTANCE
Thermal performance is directly linked to printed circuit board
(PCB) design and operating environment. Careful attention to
PCB thermal design is required.
Table 3. Thermal Resistance
Package Type
E-12-11
θJC
180
Unit
°C/W
1 See JEDEC standard JESD51-2 for additional information on optimizing the
thermal impedance (PCB with 3 × 3 vias).
ESD CAUTION
Rev. 0 | Page 4 of 15
5 Page 
HMC558A
Data Sheet
RETURN LOSS AND ISOLATION PERFORMANCE
Data taken at TA = 25°C, LO drive level = 15 dBm unless otherwise specified.
80
–40°C
+25°C
70 +85°C
80
70
60
LO TO RF
50
60
50
LO TO RF
9dBm
12dBm
15dBm
18dBm
20dBm
40 40
30 LO TO IF
20
30
LO TO IF
20
10 10
0
4 5 6 7 8 9 10 11 12 13 14 15 16
LO FREQUENCY (GHz)
Figure 27. LO to RF and LO to IF Isolation vs. LO Frequency at Various
Temperatures, IF = 100 MHz
0
4 5 6 7 8 9 10 11 12 13 14 15 16
LO FREQUENCY (GHz)
Figure 29. LO to RF and LO to IF Isolation vs. LO Frequency at Various
LO Powers, IF = 100 MHz
40
–40°C
+25°C
35 +85°C
30
40
9dBm
12dBm
35 15dBm
18dBm
30
25 25
20 20
15 15
10 10
55
0
4 5 6 7 8 9 10 11 12 13 14 15 16
RF FREQUENCY (GHz)
Figure 28. RF to IF Isolation vs. RF Frequency at Various Temperatures,
IF = 100 MHz
0
4 5 6 7 8 9 10 11 12 13 14 15 16
RF FREQUENCY (GHz)
Figure 30. RF to IF Isolation vs. RF Frequency at Various LO Powers,
IF = 100 MHz
Rev. 0 | Page 10 of 15
11 Page | ||
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