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What is HMC8400?

This electronic component, produced by the manufacturer "Analog Devices", performs the same function as "GaAs pHEMT MMIC Low Noise Amplifier".


HMC8400 Datasheet PDF - Analog Devices

Part Number HMC8400
Description GaAs pHEMT MMIC Low Noise Amplifier
Manufacturers Analog Devices 
Logo Analog Devices Logo 


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Data Sheet
2 GHz to 30 GHz, GaAs
pHEMT MMIC Low Noise Amplifier
HMC8400
FEATURES
Output power for 1 dB compression (P1dB): 14.5 dBm typical
Saturated output power (PSAT): 17 dBm typical
Gain: 13.5 dB typical
Noise figure: 2 dB
Output third-order intercept (IP3): 26.5 dBm typical
Supply voltage: 5 V at 67 mA
50 Ω matched input/output
Die size: 2.7 mm × 1.35 mm × 0.05 mm
APPLICATIONS
Test instrumentation
Microwave radios and very small aperture terminals (VSATs)
Military and space
Telecommunications infrastructure
Fiber optics
GENERAL DESCRIPTION
The HMC8400 is a gallium arsenide (GaAs), pseudomorphic
high electron mobility transistor (pHEMT), monolithic microwave
integrated circuit (MMIC). The HMC8400 is a wideband low
noise amplifier that operates between 2 GHz and 30 GHz. The
amplifier provides 13.5 dB of gain, a 2 dB noise figure, 26.5 dBm
output IP3, and 14.5 dBm of output power at 1 dB gain compres-
sion, requiring 67 mA from a 5 V supply. The HMC8400 is self
biased with only a single positive supply needed to achieve a
drain current IDD of 67 mA. The HMC8400 also has a gain control
option, VGG2. The HMC8400 amplifier input/outputs are internally
matched to 50 Ω and dc blocked, facilitating integration into
multichip modules (MCMs). All data is taken with the chip
connected via two 0.025 mm (1 mil) wire bonds of minimal
length 0.31 mm (12 mils).
3
VDD
2 VGG2
1
RFIN
FUNCTIONAL BLOCK DIAGRAM
HMC8400
4
RFOUT
Figure 1.
Rev. A
Document Feedback
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibilityisassumedbyAnalogDevicesforitsuse,norforanyinfringementsofpatentsorother
rightsofthird parties thatmayresult fromits use. Specifications subjecttochange withoutnotice.
No license is granted by implication or otherwise under any patent or patent rights of Analog
Devices.Trademarksandregisteredtrademarksarethepropertyoftheirrespectiveowners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
©2016 Analog Devices, Inc. All rights reserved.
Technical Support
www.analog.com

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HMC8400 equivalent
Data Sheet
ABSOLUTE MAXIMUM RATINGS
Table 4.
Parameter
Drain Bias Voltage (VDD)
Second Gate Bias Voltage (VGG2)
RF Input Power (RFIN)
Channel Temperature
Continuous Power Dissipation (PDISS),
TA = 85°C (Derate 17.2 mW/°C Above 85°C)
Thermal Resistance, θJA (Channel to
Bottom Die)
Storage Temperature Range
Operating Temperature Range
ESD Sensitivity, Human Body Model (HBM)
Rating
8V
−2.5 V to +3 V
23 dBm
175°C
1.55 W
58°C/W
−65°C to +150°C
−55°C to +85°C
250 V (Class 1A)
HMC8400
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
ESD CAUTION
Rev. A | Page 5 of 14


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