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PDF HMC930A Data sheet ( Hoja de datos )
| Número de pieza | HMC930A | |
| Descripción | 0.25 W Power Amplifier | |
| Fabricantes | Analog Devices | |
| Logotipo |  |
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Data Sheet
GaAs, pHEMT, MMIC,
0.25 W Power Amplifier, DC to 40 GHz
HMC930A
FEATURES
High output power for 1 dB compression (P1dB): 22 dBm
High saturated output power (PSAT): 24 dBm
High gain: 13 dB
High output third-order intercept (IP3): 33.5 dBm
Supply voltage: 10 V at 175 mA
50 Ω matched input/output
Die size: 2.82 mm × 1.50 mm × 0.1 mm
APPLICATIONS
Test instrumentation
Microwave radios and VSATs
Military and space
Telecommunications infrastructure
Fiber optics
GENERAL DESCRIPTION
The HMC930A is a gallium arsenide (GaAs), pseudomorphic,
high electron mobility transfer (pHEMT), monolithic microwave
integrated circuit (MMIC), distributed power amplifier that
operates from dc to 40 GHz. The HMC930A provides 13 dB of
gain, 33.5 dBm output IP3, and 22 dBm of output power at 1 dB
gain compression, requiring 175 mA from a 10 V supply. The
HMC930A exhibits a slightly positive gain slope from 8 GHz to
FUNCTIONAL BLOCK DIAGRAM
34
HMC930A
2 VGG2
1 RFIN
RFOUT/VDD 5
VGG1 8
Figure 1.
76
32 GHz, making it ideal for electronic warfare (EW), electronic
countermeasures (ECM), radar, and test equipment
applications. The HMC930A amplifier inputs/outputs (I/Os) are
internally matched to 50 Ω, facilitating integration into multichip
modules (MCMs). All data is taken with the chip connected via
two 0.025 mm (1 mil) wire bonds of minimal length at 0.31 mm
(12 mils).
Rev. 0
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responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarksandregisteredtrademarksarethepropertyoftheirrespectiveowners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
©2015 Analog Devices, Inc. All rights reserved.
Technical Support
www.analog.com
1 page  
Data Sheet
ABSOLUTE MAXIMUM RATINGS
Table 5.
Parameter
Drain Bias Voltage (VDD)
Gate Bias Voltage
VGG1
VGG2
VDD = 12 V
VDD = 8.5 V to 11 V
VDD < 8.5 V
RF Input Power (RFIN)
Channel Temperature
Continuous Power Dissipation, PDISS
(TA = 85°C, Derate 69 mW/°C
Above 85°C)
Thermal Resistance
(Channel to Die Bottom)
Output Power into Voltage Standing
Wave Ratio (VSWR) > 7:1
Storage Temperature Range
Operating Temperature Range
ESD Sensitivity, Human Body Model
(HBM)
Rating
13 V
−3 V to 0 V dc
VGG2 = 5.5 V, IDD >145 mA
VGG2 = (VDD − 6.5 V) up to
4.5 V
VGG2 must remain > 2 V
22 dBm
150°C
2.1 W
31.1°C/W
24 dBm
−65°C to +150°C
−55°C to +85°C
Class 1A, passed 250 V
HMC930A
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
ESD CAUTION
Rev. 0 | Page 5 of 16
5 Page 
Data Sheet
0
–10
–20
–30
–40
–50
+85°C
–60 +25°C
–55°C
–70
–80
0 4 8 12 16 20 24 28 32 36 40 44
FREQUENCY (GHz)
Figure 27. Reverse Isolation vs. Frequency for Various Temperatures
35
GAIN
P1dB
30 PSAT
25
20
15
10
125 135 145 155 165 175
IDD (mA)
Figure 28. Gain and Power (P1dB and PSAT) vs. Supply Current (IDD) at 20 GHz
3
4GHz
10GHz
20GHz
30GHz
40GHz
2
1
0
0 3 6 9 12 15
INPUT POWER (dBm)
Figure 29. Power Dissipation
HMC930A
30
POUT
25 GAIN
PAE
IDD
20
250
235
220
15 205
10 190
5 175
0 160
0 2 4 6 8 10 12 14 16 18
INPUT POWER (dBm)
Figure 30. Power Compression at 20 GHz
35
GAIN
P1dB
30 PSAT
25
20
15
10
8 9 10 11
VDD (V)
Figure 31. Gain and Power (P1dB and PSAT) vs. Supply Voltage (VDD) at 20 GHz
70
60
+85°C
+25°C
50 –40°C
40
30
20
10
0
0 4 8 12 16 20 24
FREQUENCY (GHz)
Figure 32. Second-Order Harmonic vs. Frequency for Various Temperatures
at POUT = 14 dBm, VDD = 10 V, VGG = 3.5 V, and IDD = 175 mA
Rev. 0 | Page 11 of 16
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet HMC930A.PDF ] | |
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