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HMC969 PDF даташит

Спецификация HMC969 изготовлена ​​​​«Analog Devices» и имеет функцию, называемую «GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER».

Детали детали

Номер произв HMC969
Описание GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER
Производители Analog Devices
логотип Analog Devices логотип 

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HMC969 Даташит, Описание, Даташиты
v00.1210
Typical Applications
The HMC969 is ideal for:
• Point-to-Point Radios
3 • Point-to-Multi-Point Radios
• VSAT & SATCOM
• Military & Space
Functional Diagram
HMC969
GaAs pHEMT MMIC 1 WATT
POWER AMPLIFIER, 40 - 43.5 GHz
Features
Saturated Output Power: +31 dBm @ 15% PAE
Output IP3: +38 dBm
High Gain: 22 dB
DC Supply: +6V @ 900 mA
No External Matching Required
Die Size: 2.77 x 2.32 x 0.1 mm
General Description
The HMC969 is a 4 stage GaAs pHEMT MMIC 1 Watt
Power Amplifier which operates between 40 and 43.5
GHz. The HMC969 provides 22 dB of gain, +31 dBm
of saturated output power, and 15% PAE from a +6V
supply. With a very good IP3 of 38 dBm, the HMC969
is ideal for linear applications including military and
space as well as point-to-point and point-to-multi-point
radios. All data is taken with the chip in a 50 Ohm test
fixture connected via (2) 0.025 mm (1 mil) diameter
wire bonds of 0.31 mm (12 mil) length.
Electrical Specifications
TA = +25° C, Vdd = Vdd1 = Vdd2 = +6V, Idd = 900 mA [1]
Parameter
Min.
Frequency Range
Gain
19
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)[2]
Total Supply Current (Idd)
[1] Adjust Vgg between -2 to 0V to achieve Idd = 900 mA typical.
[2] Measurement taken at +6V @ 900 mA, Pout / Tone = +18 dBm
Typ.
40 - 43.5
22
0.03
14
27
28
31
38
900
Max.
Units
GHz
dB
dB/ °C
dB
dB
dBm
dBm
dBm
mA
3-1
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HMC969 Даташит, Описание, Даташиты
HMC969* PRODUCT PAGE QUICK LINKS
Last Content Update: 02/23/2017
COMPARABLE PARTS
View a parametric search of comparable parts.
DOCUMENTATION
Data Sheet
HMC969 Data Sheet
TOOLS AND SIMULATIONS
HMC969 S-Parameter
REFERENCE MATERIALS
Quality Documentation
Semiconductor Qualification Test Report: PHEMT-H (QTR:
2013-00260)
DESIGN RESOURCES
HMC969 Material Declaration
PCN-PDN Information
Quality And Reliability
Symbols and Footprints
DISCUSSIONS
View all HMC969 EngineerZone Discussions.
SAMPLE AND BUY
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TECHNICAL SUPPORT
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number.
DOCUMENT FEEDBACK
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HMC969 Даташит, Описание, Даташиты
v00.1210
Broadband Gain &
Return Loss vs. Frequency
30
20
10 S21
S11
0 S22
-10
-20
-30
-40
38 39 40 41 42 43 44 45 46
FREQUENCY (GHz)
Input Return Loss vs. Temperature
0
-5
+25C
+85C
-55C
-10
-15
-20
-25
-30
39 40 41 42 43 44
FREQUENCY (GHz)
45
P1dB vs. Temperature
36
34
+25C
+85C
32 -55C
30
28
26
24
40
41 42 43
FREQUENCY (GHz)
44
HMC969
GaAs pHEMT MMIC 1 WATT
POWER AMPLIFIER, 40 - 43.5 GHz
Gain vs. Temperature
30
26
22
18
14
+25C
+85C
-55C
10
39 40 41 42 43 44 45
FREQUENCY (GHz)
Output Return Loss vs. Temperature
0
-5 +25C
+85C
-10 -55C
-15
-20
-25
-30
-35
-40
39 40 41 42 43 44 45
FREQUENCY (GHz)
3
P1dB vs. Supply Voltage
36
34
32
5.0V
5.5V
6.0V
30
28
26
24
40
41 42 43
FREQUENCY (GHz)
44
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3-2










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