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NJM8901 PDF даташит

Спецификация NJM8901 изготовлена ​​​​«New Japan Radio» и имеет функцию, называемую «J-FET Input Dual Operational Amplifier».

Детали детали

Номер произв NJM8901
Описание J-FET Input Dual Operational Amplifier
Производители New Japan Radio
логотип New Japan Radio логотип 

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NJM8901 Даташит, Описание, Даташиты
NJM8901
High Quality Audio
J-FET Input Dual Operational Amplifier
GENERAL DESCRIPTION
The NJM8901 is a high quality audio dual operational Amplifier
with JFET technology, strikes a balance between “MUSES
technology” and mass-production technique.
The original process tuning and the assembly technology, based on
MUSES technology, make excellent sound and absorbing cost
increases.
The characteristics like Low noise (13nV/Hz), high slew rate
(20V/µs) and low distortion (0.003% at Av=10) suitable for audio
preamplifiers, active filters, and line amplifiers. In addition, taking
advantage of the low input bias current that J-FET has, it is suitable for
transimpedance amplifier (I/V converter).
PACKAGE OUTLINE
(SOP8 JEDEC 150 mil)
FEATURES
Low Noise
Low Distortion
Wide Gain Bandwidth Product
Slew Rate
Input Offset Voltage
Input Bias Current
Open Loop Voltage Gain
Operating Voltage
J-FET Technology
Package Outline
13nV/Hz typ.
1.6uVrms typ. (RIAA)
0.003% typ. (Av=10)
5MHz typ.
20V/µs typ.
2mV typ. 10mV max.
30pA typ. 400pA max.
110dB typ.
±4V ~±18V
SOP8 JEDEC 150 mil
PIN CONFIGLATION
(Top View)
18
2A
7
3 B6
45
PIN FUNCTION
1. A OUTPUT
2. A -INPUT
3. A +INPUT
4. V-
5. B +INPUT
6. B -INPUT
7. B OUTPUT
8.V+
TYPICAL APPLICATION
Digital
Input
DA
Converter
I/V
I/V
LPF
DAC Output I/V converter + LPF circuit
Analog
Output
Buf f
Ver.2014-10-28
-1-









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NJM8901 Даташит, Описание, Даташиты
NJM8901
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC)
PARAMETER
SYMBOL
RATING
UNIT
Supply Voltage
V+/V-
±18
V
Common Mode Input Voltage Range
Differential Input Voltage Range
Power Dissipation
Operating Temperature Range
Storage Temperature Range
VICM
VID
PD
TOPR
TSTG
±15 (Note1)
±30
550 (Note2)
-40~+85
-40~+125
V
V
mW
ºC
ºC
(Note 1) For supply Voltages less than ±15V, the maximum input voltage is equal to the Supply Voltage.
(Note 2) Mounted on the EIA/JEDEC standard board (114.3×76.2×1.6mm, two layer, FR-4).
Please refer to the following Power Dissipation and Ambient Temperature.
RECOMMENDED OPERATING CONDITION (Ta=25ºC)
PARAMETER
SYMBOL
TEST CONDITION
Supply Voltage
V+/V-
MIN. TYP. MAX. UNIT
±4.0 - ±18 V
ELECTRIC CHARACTERISTICS
DC CHARACTERISTICS (V+/V-=±15V, Vcm=0V, Ta=25ºC, unless otherwise noted.)
PARAMETER
SYMBOL
TEST CONDITION
MIN.
Supply Current
Input Offset Voltage
Input Bias Current
Input Offset Current
Input Resistance
Large Signal Voltage Gain
Common Mode Rejection Ratio
Supply Voltage Rejection Ratio
Maximum Output Voltage
Common Mode Input Voltage Range
(Note3) Written by the absolute rate.
ICC
VIO
IB
IIO
RIN
AV
CMR
SVR
VOM
VICM
RL=, No Signal
RS=50(Note3)
(Note3)
RL2k, Vo=±10V
VCM=±12V, Rs10k
V+/V-=±9.0 to ±18V, Rs10k
RL10k
CMR70dB
-
-
-
-
-
86
70
76
±12
±12
TYP.
4
2
30
5
1012
110
90
100
+13.5, -13
+15, -12.5
MAX.
6
10
400
200
-
-
-
-
-
-
UNIT
mA
mV
pA
pA
dB
dB
dB
V
V
AC CHARACTERISTICS (V+/V-=15V, Vcm=0V, Ta=25ºC unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITION
MIN.
Slew Rate
Gain Bandwidth Product
SR RL2k
GB f=10kHz
-
-
Equivalent Input Noise Voltage1
Equivalent Input Noise Voltage2
Total Harmonic Distortion
Channel Separation
eN
VNI
THD
CS
RS=100, f=1KHz
RIAA, RS=2.2k, 30kHz, LPF
f=1kHz ,AV=+10, Vo=5Vrms, RL=2k
f=1kHz , AV=-100, RS=1k, RL=2k
-
-
-
TYP.
20
5
13
1.6
0.003
130
MAX.
-
-
-
3
-
-
UNIT
V/us
MHz
nV/Hz
μVrms
%
dB
-2-
Ver.2014-10-28









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NJM8901 Даташит, Описание, Даташиты
NJM8901
Application Notes
Package Power, Power Dissipation and Output Power
IC is heated by own operation and possibly gets damage when the junction power exceeds the acceptable value called
Power Dissipation PD. The dependence PD on ambient temperature is shown in Fig 1. The plots are depended on following
two points. The first is PD on ambient temperature 25ºC, which is the maximum power dissipation. The second is 0W, which
means that the IC cannot radiate any more. Conforming the maximum junction temperature Tjmax to the storage
temperature Tstg derives this point. Fig.1 is drawn by connecting those points and conforming the PD lower than 25ºC to it
on 25ºC. The PD is shown following formula as a function of the ambient temperature between those points.
Dissipation Power PD =
Tjmax - Ta
ja
[W] (Ta=25ºC to Ta=150ºC)
Where, θja is heat thermal resistance which depends on parameters such as package material, frame material and so on.
Therefore, PD is different in each package.
While, the actual measurement of dissipation power on IC is obtained using following equation.
(Actual Dissipation Power) = (Supply Voltage V+/V-) X (Supply Current Icc) – (Output Power Po)
This IC should be operated in lower than PD of the actual dissipation power.
To sustain the steady state operation, take account of the Dissipation Power and thermal design.
800
700
600 SOP8
500
400
300
200
100
0
-15 5 25
45 65 85 105 125
Ta (°C)
Fig.1 Power Dissipations vs. Ambient Temperature
Ver.2014-10-28
-3-










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Номер в каталогеОписаниеПроизводители
NJM8901J-FET Input Dual Operational AmplifierNew Japan Radio
New Japan Radio

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