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NJG1802K51 PDF даташит

Спецификация NJG1802K51 изготовлена ​​​​«New Japan Radio» и имеет функцию, называемую «HIGH POWER SPDT SWITCH GaAs MMIC».

Детали детали

Номер произв NJG1802K51
Описание HIGH POWER SPDT SWITCH GaAs MMIC
Производители New Japan Radio
логотип New Japan Radio логотип 

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NJG1802K51 Даташит, Описание, Даташиты
NJG1802K51
HIGH POWER SPDT SWITCH GaAs MMIC
I GENERAL DESCRIPTION
The NJG1802K51 is a GaAs SPDT switch MMIC suitable for
LTE/UMTS/CDMA/GSM applications. The NJG1802K51 features
very low insertion loss, high isolation and excellent linearity
performance down to 1.8V control voltage at high frequency up to
2.7GHz. In addition, this switch is able to handle high power signals.
For saving current consumption, the NJG1802K51 has a
shutdown mode. The NJG1802K51 has ESD protection devices to
achieve excellent ESD performances. No DC Blocking capacitors
are required for all RF ports unless DC is biased externally. And the
ultra small & ultra thin QFN12-51 package is adopted.
I PACKAGE OUTLINE
NJG1802K51
I APPLICATIONS
LTE, UMTS, CDMA, GSM applications
Post PA Switching, Antenna Switching and Bands Switching applications
General Purpose Switching applications
I FEATURES
G Low voltage logic control
G Low voltage operation
G Low distortion
G Linearity
G Low insertion loss
VCTL(H)=1.8V typ.
VDD=2.7V typ.
IIP3=+73dBm typ. @f=829+849MHz, PIN=24dBm
IIP3=+73dBm typ. @f=1870+1910MHz, PIN=24dBm
2nd/3rd harmonics=-90dBc/ 90dBc typ. @f=0.9GHz, PIN=35dBm
P-0.1dB=+36dBm min.
0.18dB/ 0.20dB/ 0.23dB typ. @f=0.9GHz/ 1.9GHz/ 2.7GHz
G Ultra small & ultra thin package QFN12-51 (Package size: 2.0 x 2.0 x 0.375mm.)
G RoHS compliant and Halogen Free, MSL1
I PIN CONFIGURATION
(TOP VIEW)
987
10
DECODER
6
11 5
12 4
123
Pin connection
1. GND
7. VCTL1
2. PC
8. VCTL2
3. GND
9. VDD
4. NC (GND) 10. GND
5. P1
11. P2
6. NC (GND) 12. NC (GND)
Exposed PAD: GND
I TRUTH TABLE
VCTL1
Don’t care
H
L
“H”=VCTL(H), “L”=VCTL(L)
VCTL2
Path
L Shutdown
H PC-P2
H PC-P1
NOTE: Please note that any information on this datasheet will be subject to change.
Ver.2014-04-11
-1-









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NJG1802K51 Даташит, Описание, Даташиты
NJG1802K51
I ABSOLUTE MAXIMUM RATINGS
PARAMETER
RF Input Power
Supply Voltage
Control Voltage
Power Dissipation
Operating Temp.
Storage Temp.
SYMBOL
CONDITIONS
PIN VDD =2.7V, on-state ports
VDD VDD terminal
VCTL
PD
Topr
Tstg
VCTL1, VCTL2 terminal
Four-layer FR4 PCB with through-hole
(101.5x114.5mm), Tj=150°C
(Ta=+25°C, Zs=Zl=50)
RATINGS UNITS
37 dBm
5.0 V
5.0 V
1190
mW
-40~+85
°C
-55~+150
°C
I ELECTRICAL CHARACTERISTICS 1 (DC)
(General conditions: Ta=+25°C, VDD=2.7V, VCTL(L)=0V, VCTL(H)=1.8V)
PARAMETERS
SYMBOL
CONDITIONS
MIN TYP MAX UNITS
Supply Voltage
Operating Current
Shutdown Current
VDD VDD Terminal
IDD No RF input, VDD=2.7V
IOFF Shutdown mode
2.5 2.7 5.0
V
- 100 200 µA
- 8 20 µA
Control Voltage (LOW) VCTL(L) VCTL1, VCTL2 Terminal
Control Voltage (HIGH) VCTL(H) VCTL1, VCTL2 Terminal
Control Current
ICTL VCTL(H)=1.8V
0 - 0.45 V
1.35 1.8
5.0
V
- 4 10 µA
-2-









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NJG1802K51 Даташит, Описание, Даташиты
NJG1802K51
I ELECTRICAL CHARACTERISTICS 2 (RF)
(General conditions: Ta=+25°C, Zs=Zl=50, VDD=2.7V, VCTL(L)=0V, VCTL(H)=1.8V)
PARAMETERS
SYMBOL
CONDITIONS
MIN TYP MAX UNITS
Insertion Loss 1
Insertion Loss 2
Insertion Loss 3
LOSS1 f=0.9GHz, PIN=35dBm
LOSS2 f=1.9GHz, PIN=33dBm
LOSS3 f=2.7GHz, PIN=27dBm
- 0.18 0.33 dB
- 0.20 0.40 dB
- 0.23 0.43 dB
Isolation 1
Isolation 2
Isolation 3
Input Power at 0.1dB
Compression Point
2nd Harmonics 1
ISL1 f=0.9GHz, PIN=35dBm
ISL2 f=1.9GHz, PIN=33dBm
ISL3 f=2.7GHz, PIN=27dBm
P-0.1dB f=0.9GHz, 1.9GHz, 2.7GHz
2fo(1) f=0.9GHz, PIN=35dBm
45 50 - dB
33 38 - dB
28 33 - dB
36 -
- dBm
- -90 -70 dBc
2nd Harmonics 2
2fo(2) f=1.9GHz, PIN=33dBm
- -100 -70 dBc
2nd Harmonics 3
3rd Harmonics 1
3rd Harmonics 2
3rd Harmonics 3
Input 3rd order
intercept point1
Input 3rd order
intercept point2
VSWR
2fo(3) f=2.7GHz, PIN=27dBm
3fo(1) f=0.9GHz, PIN=35dBm
3fo(2) f=1.9GHz, PIN=33dBm
3fo(3)
IIP3(1)
IIP3(2)
VSWR
f=2.7GHz, PIN=27dBm
f=829+849MHz,
PIN=24dBm each
f=1870+1910MHz,
PIN=24dBm each
on-state ports, f=2.7GHz
- -100 -70 dBc
- -90 -70 dBc
- -85 -70 dBc
- -90 -70 dBc
+65 +73
- dBm
+65 +73
- dBm
- 1.1 1.4
Switching time
TSW 50% VCTL to 10/90% RF
Wake Up Time
TWK
Shutdown state to
any RF switch state
*1: IIP3 are defined by the following equations.
IIP3=(3 x Pout-IM3)/2+LOSS
- 1 5 µs
- - 20 µs
-3-










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Номер в каталогеОписаниеПроизводители
NJG1802K51HIGH POWER SPDT SWITCH GaAs MMICNew Japan Radio
New Japan Radio

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