NJG1133MD7 PDF даташит
Спецификация NJG1133MD7 изготовлена «New Japan Radio» и имеет функцию, называемую «UMTS Triple Band LNA GaAs MMIC». |
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Детали детали
Номер произв | NJG1133MD7 |
Описание | UMTS Triple Band LNA GaAs MMIC |
Производители | New Japan Radio |
логотип |
30 Pages
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NJG1133MD7
UMTS Triple Band LNA GaAs MMIC
IGENERAL DISCRIPTION
NJG1133MD7 is a triple band LNA IC designed for UMTS and LTE.
This IC has a LNA pass-through function to select high gain mode
or suitable low gain mode. The LNA of 1.7GHz band can be used
to 1.5GHz band by changing application circuit.
An ultra-small and ultra-thin package of EQFN14-D7 is adopted.
IPACKAGE OUTLINE
NJG1133MD7
IAPPLICATIONS
2.1GHz, 1.7GHz and 800MHz triple band of standard condition application
Any dual High-band and single Low-band combination for LTE and UMTS applications,
like Band1,2 and 5,Band1,3 and 5,Band1,2 and 8
Note: For except of standard condition applications please refer to Application Note
IFEATURES
GLow operation voltage
GLow control voltage
GLow current consumption
GSmall and thin package
[High Gain Mode]
●High gain
●Low noise figure
●High input IP3
[Low Gain Mode]
●Gain
●High input IP3
+2.8V typ.
+1.8V typ.
2.3mA typ. @High Gain Mode
48µA typ. @Low Gain Mode
EQFN14-D7 (Package size: 1.6 x 1.6 x 0.397mm typ.)
16.0dB typ.
1.35dB typ.
1.40dB typ.
1.55dB typ.
+0.5dBm typ.
-2.0dBm typ.
0dBm typ.
0dBm typ.
@fRF=2140MHz, 885MHz, 1860MHz, 1495MHz
@fRF=2140MHz, 1860MHz
@fRF=885MHz
@fRF=1495MHz
@fRF=2140.0+2140.1MHz, Pin=-30dBm
@fRF=885.0+885.1MHz, Pin=-30dBm
@fRF=1860.0+1860.1MHz, Pin=-30dBm
@fRF=1495.0+1495.1MHz, Pin=-30dBm
-3.5dB typ.
-3.0dB typ.
-4.0dB typ.
+12dBm typ.
+12dBm typ.
+15dBm typ.
+15dBm typ.
@fRF=2140MHz
@fRF=885MHz, 1495MHz
@fRF=1860MHz
@fRF=2140.0+2140.1MHz, Pin=-16dBm
@fRF=885.0+885.1MHz, Pin=-20dBm
@fRF=1860.0+1860.1MHz, Pin=-16dBm
@fRF=1495.0+1495.1MHz, Pin=-16dBm
IPIN CONFIGURATION
GND 11
RFIN3 10
(Top View)
GND 9
GND 8
RFIN2
132
RFIN1
13
VCTL3
14
1pin
GND 1
Bias
Circuit
1.71G.H7zGBaHndz
Band
Logic
Circuit
2.1GHz Band
Bias
Circuit
800MHz Band
Bias
Circuit
RFOUT3
7
RFOUT2
6
5
RFOUT1
VCTL2 2
VCTL1 3
GND 4
Pin Connection
1. GND
2. VCTL2
3. VCTL1
4. GND
5. RFOUT1 (800MHz)
6. RFOUT2 (2.1GHz)
7. RFOUT3 (1.7G/1.5GHz)
8. GND
9. GND
10. RFIN3 (1.7G/1.5GHz)
11. GND
12. RFIN2 (2.1GHz)
13. RFIN1 (800MHz)
14. VCTL3
Note: Specifications and description listed in this datasheet are subject to change without prior notice.
Ver.2013-04-23
-1-
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NJG1133MD7
IABSOLUTE MAXIMUM RATINGS
PARAMETERS
Operating voltage
Control voltage
Input power
Power dissipation
Operating temperature
Storage temperature
SYMBOL
CONDITIONS
VDD
VCTL
Pin
PD
Topr
Tstg
VCTL1,2,3 terminal
4-layer FR4 PCB with through-hole
(74.2x74.2mm), Tj=150°C
Ta=+25°C, Zs=Zl=50Ω
RATINGS UNITS
5.0 V
5.0 V
+15 dBm
1300
mW
-40~+85
-55~+150
°C
°C
IELECTRICAL CHARACTERISTICS 1 (DC CHARACTERISTICS)
General conditions: VDD=2.8V, Ta=+25°C, Zs=Zl=50Ω, with application circuit
PARAMETERS
SYMBOL
CONDITIONS
MIN TYP MAX UNITS
Operating voltage
Control voltage1 (High)
Control voltage1 (Low)
Control voltage 2 (High)
Control voltage 2 (Low)
Control voltage 3 (High)
Control voltage 3 (Low)
VDD
VCTL1(H)
VCTL1(L)
VCTL2(H)
VCTL2(L)
VCTL3(H)
VCTL3(L)
2.7 2.8 3.6 V
1.36
1.8
3.6
V
0 0 0.3 V
1.36
1.8
3.6
V
0 0 0.3 V
1.36
1.8
3.6
V
0 0 0.3 V
Operating current 1
2.1GHz Band High Gain mode
IDD1
VCTL1=0V, VCTL2=0V,
VCTL3=1.8V, RF OFF
- 2.3 3.1 mA
Operating current 2
800MHz Band high Gain mode
IDD2
VCTL1=1.8V, VCTL2=0V,
VCTL3=1.8V, RF OFF
- 2.3 3.1 mA
Operating current 3
1.7GHz Band High Gain mode
IDD3
VCTL1=0V, VCTL2=1.8V,
VCTL3=1.8V, RF OFF
- 2.3 3.1 mA
Operating current 4
1.5GHz Band High Gain mode
IDD4
VCTL1=1.8V, VCTL2=1.8V,
VCTL3=1.8V, RF OFF
-
2.3 3.1 mA
Operating current 5
IDD5 VCTL3=0V, RF OFF
- 48 85 µA
Control current 1
ICTL1 VCTL1=1.8V
- 5.5 8.5 µA
Control current 2
ICTL2 VCTL2=1.8V
- 5.5 8.5 µA
Control current 3
ICTL3 VCTL3=1.8V
- 5.5 8.5 µA
-2-
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NJG1133MD7
IELECTRICAL CHARACTERISTICS 2 (2.1GHz Band High Gain Mode)
General conditions: VDD=2.7V, VCTL1=0V, VCTL2=0V, VCTL3=1.8V, fRF=2140MHz, Ta=+25°C,
Zs=Zl=50Ω, with application circuit
PARAMETERS
SYMBOL
CONDITIONS
MIN TYP MAX UNITS
Small signal gain 1
Gain1
Exclude PCB & connector losses
(IN: 0.09dB, OUT: 0.36dB)
Noise figure 1
NF1
Exclude PCB & connector losses
(IN: 0.09dB)
Input Power at 1dB gain
compression point 1
Input 3rd order intercept
point 1
P-1dB(IN)_1
IIP3_1
f1=fRF, f2=fRF+100kHz,
Pin=-30dBm
14.5
-
-15.0
-9.0
RF Input VSWR 1
VSWRi1
-
16.0
1.35
-11.5
+0.5
1.5
17.5 dB
1.5 dB
- dBm
- dBm
2.0
RF Output VSWR 1
VSWRo1
- 2.0 2.5
IELECTRICAL CHARACTERISTICS 3 (2.1GHz Band Low Gain Mode)
General conditions: VDD=2.7V, VCTL1=0V, VCTL2=0V, VCTL3=0V, fRF=2140MHz, Ta=+25°C, Zs=Zl=50Ω,
with application circuit
PARAMETERS
SYMBOL
CONDITIONS
MIN TYP MAX UNITS
Small signal gain 2
Gain2
Exclude PCB & connector losses
(IN: 0.09dB, OUT: 0.36dB)
-5.0
-3.5
-2.0 dB
Noise figure 2
NF2
Exclude PCB & connector losses
(IN: 0.09dB)
-
3.5 6.0 dB
Input Power at 1dB gain
compression point 2
P-1dB(IN)_2
Input 3rd order intercept
point 2
IIP3_2
f1=fRF, f2=fRF+100kHz,
Pin=-16dBm
+5.0 +14.0 - dBm
0 +12.0 - dBm
RF Input VSWR 2
VSWRi2
- 1.6 2.0
RF Output VSWR 2
VSWRo2
- 1.9 2.3
-3-
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NJG1133MD7 | UMTS Triple Band LNA GaAs MMIC | New Japan Radio |
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