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NJG1133MD7 PDF даташит

Спецификация NJG1133MD7 изготовлена ​​​​«New Japan Radio» и имеет функцию, называемую «UMTS Triple Band LNA GaAs MMIC».

Детали детали

Номер произв NJG1133MD7
Описание UMTS Triple Band LNA GaAs MMIC
Производители New Japan Radio
логотип New Japan Radio логотип 

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NJG1133MD7 Даташит, Описание, Даташиты
NJG1133MD7
UMTS Triple Band LNA GaAs MMIC
IGENERAL DISCRIPTION
NJG1133MD7 is a triple band LNA IC designed for UMTS and LTE.
This IC has a LNA pass-through function to select high gain mode
or suitable low gain mode. The LNA of 1.7GHz band can be used
to 1.5GHz band by changing application circuit.
An ultra-small and ultra-thin package of EQFN14-D7 is adopted.
IPACKAGE OUTLINE
NJG1133MD7
IAPPLICATIONS
2.1GHz, 1.7GHz and 800MHz triple band of standard condition application
Any dual High-band and single Low-band combination for LTE and UMTS applications,
like Band1,2 and 5,Band1,3 and 5,Band1,2 and 8
Note: For except of standard condition applications please refer to Application Note
IFEATURES
GLow operation voltage
GLow control voltage
GLow current consumption
GSmall and thin package
[High Gain Mode]
High gain
Low noise figure
High input IP3
[Low Gain Mode]
Gain
High input IP3
+2.8V typ.
+1.8V typ.
2.3mA typ. @High Gain Mode
48µA typ. @Low Gain Mode
EQFN14-D7 (Package size: 1.6 x 1.6 x 0.397mm typ.)
16.0dB typ.
1.35dB typ.
1.40dB typ.
1.55dB typ.
+0.5dBm typ.
-2.0dBm typ.
0dBm typ.
0dBm typ.
@fRF=2140MHz, 885MHz, 1860MHz, 1495MHz
@fRF=2140MHz, 1860MHz
@fRF=885MHz
@fRF=1495MHz
@fRF=2140.0+2140.1MHz, Pin=-30dBm
@fRF=885.0+885.1MHz, Pin=-30dBm
@fRF=1860.0+1860.1MHz, Pin=-30dBm
@fRF=1495.0+1495.1MHz, Pin=-30dBm
-3.5dB typ.
-3.0dB typ.
-4.0dB typ.
+12dBm typ.
+12dBm typ.
+15dBm typ.
+15dBm typ.
@fRF=2140MHz
@fRF=885MHz, 1495MHz
@fRF=1860MHz
@fRF=2140.0+2140.1MHz, Pin=-16dBm
@fRF=885.0+885.1MHz, Pin=-20dBm
@fRF=1860.0+1860.1MHz, Pin=-16dBm
@fRF=1495.0+1495.1MHz, Pin=-16dBm
IPIN CONFIGURATION
GND 11
RFIN3 10
(Top View)
GND 9
GND 8
RFIN2
132
RFIN1
13
VCTL3
14
1pin
GND 1
Bias
Circuit
1.71G.H7zGBaHndz
Band
Logic
Circuit
2.1GHz Band
Bias
Circuit
800MHz Band
Bias
Circuit
RFOUT3
7
RFOUT2
6
5
RFOUT1
VCTL2 2
VCTL1 3
GND 4
Pin Connection
1. GND
2. VCTL2
3. VCTL1
4. GND
5. RFOUT1 (800MHz)
6. RFOUT2 (2.1GHz)
7. RFOUT3 (1.7G/1.5GHz)
8. GND
9. GND
10. RFIN3 (1.7G/1.5GHz)
11. GND
12. RFIN2 (2.1GHz)
13. RFIN1 (800MHz)
14. VCTL3
Note: Specifications and description listed in this datasheet are subject to change without prior notice.
Ver.2013-04-23
-1-









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NJG1133MD7 Даташит, Описание, Даташиты
NJG1133MD7
IABSOLUTE MAXIMUM RATINGS
PARAMETERS
Operating voltage
Control voltage
Input power
Power dissipation
Operating temperature
Storage temperature
SYMBOL
CONDITIONS
VDD
VCTL
Pin
PD
Topr
Tstg
VCTL1,2,3 terminal
4-layer FR4 PCB with through-hole
(74.2x74.2mm), Tj=150°C
Ta=+25°C, Zs=Zl=50
RATINGS UNITS
5.0 V
5.0 V
+15 dBm
1300
mW
-40~+85
-55~+150
°C
°C
IELECTRICAL CHARACTERISTICS 1 (DC CHARACTERISTICS)
General conditions: VDD=2.8V, Ta=+25°C, Zs=Zl=50, with application circuit
PARAMETERS
SYMBOL
CONDITIONS
MIN TYP MAX UNITS
Operating voltage
Control voltage1 (High)
Control voltage1 (Low)
Control voltage 2 (High)
Control voltage 2 (Low)
Control voltage 3 (High)
Control voltage 3 (Low)
VDD
VCTL1(H)
VCTL1(L)
VCTL2(H)
VCTL2(L)
VCTL3(H)
VCTL3(L)
2.7 2.8 3.6 V
1.36
1.8
3.6
V
0 0 0.3 V
1.36
1.8
3.6
V
0 0 0.3 V
1.36
1.8
3.6
V
0 0 0.3 V
Operating current 1
2.1GHz Band High Gain mode
IDD1
VCTL1=0V, VCTL2=0V,
VCTL3=1.8V, RF OFF
- 2.3 3.1 mA
Operating current 2
800MHz Band high Gain mode
IDD2
VCTL1=1.8V, VCTL2=0V,
VCTL3=1.8V, RF OFF
- 2.3 3.1 mA
Operating current 3
1.7GHz Band High Gain mode
IDD3
VCTL1=0V, VCTL2=1.8V,
VCTL3=1.8V, RF OFF
- 2.3 3.1 mA
Operating current 4
1.5GHz Band High Gain mode
IDD4
VCTL1=1.8V, VCTL2=1.8V,
VCTL3=1.8V, RF OFF
-
2.3 3.1 mA
Operating current 5
IDD5 VCTL3=0V, RF OFF
- 48 85 µA
Control current 1
ICTL1 VCTL1=1.8V
- 5.5 8.5 µA
Control current 2
ICTL2 VCTL2=1.8V
- 5.5 8.5 µA
Control current 3
ICTL3 VCTL3=1.8V
- 5.5 8.5 µA
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NJG1133MD7 Даташит, Описание, Даташиты
NJG1133MD7
IELECTRICAL CHARACTERISTICS 2 (2.1GHz Band High Gain Mode)
General conditions: VDD=2.7V, VCTL1=0V, VCTL2=0V, VCTL3=1.8V, fRF=2140MHz, Ta=+25°C,
Zs=Zl=50, with application circuit
PARAMETERS
SYMBOL
CONDITIONS
MIN TYP MAX UNITS
Small signal gain 1
Gain1
Exclude PCB & connector losses
(IN: 0.09dB, OUT: 0.36dB)
Noise figure 1
NF1
Exclude PCB & connector losses
(IN: 0.09dB)
Input Power at 1dB gain
compression point 1
Input 3rd order intercept
point 1
P-1dB(IN)_1
IIP3_1
f1=fRF, f2=fRF+100kHz,
Pin=-30dBm
14.5
-
-15.0
-9.0
RF Input VSWR 1
VSWRi1
-
16.0
1.35
-11.5
+0.5
1.5
17.5 dB
1.5 dB
- dBm
- dBm
2.0
RF Output VSWR 1
VSWRo1
- 2.0 2.5
IELECTRICAL CHARACTERISTICS 3 (2.1GHz Band Low Gain Mode)
General conditions: VDD=2.7V, VCTL1=0V, VCTL2=0V, VCTL3=0V, fRF=2140MHz, Ta=+25°C, Zs=Zl=50,
with application circuit
PARAMETERS
SYMBOL
CONDITIONS
MIN TYP MAX UNITS
Small signal gain 2
Gain2
Exclude PCB & connector losses
(IN: 0.09dB, OUT: 0.36dB)
-5.0
-3.5
-2.0 dB
Noise figure 2
NF2
Exclude PCB & connector losses
(IN: 0.09dB)
-
3.5 6.0 dB
Input Power at 1dB gain
compression point 2
P-1dB(IN)_2
Input 3rd order intercept
point 2
IIP3_2
f1=fRF, f2=fRF+100kHz,
Pin=-16dBm
+5.0 +14.0 - dBm
0 +12.0 - dBm
RF Input VSWR 2
VSWRi2
- 1.6 2.0
RF Output VSWR 2
VSWRo2
- 1.9 2.3
-3-










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Номер в каталогеОписаниеПроизводители
NJG1133MD7UMTS Triple Band LNA GaAs MMICNew Japan Radio
New Japan Radio

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