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S29WS512P PDF даташит

Спецификация S29WS512P изготовлена ​​​​«Cypress Semiconductor» и имеет функцию, называемую «Simultaneous Read/Write Flash».

Детали детали

Номер произв S29WS512P
Описание Simultaneous Read/Write Flash
Производители Cypress Semiconductor
логотип Cypress Semiconductor логотип 

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S29WS512P Даташит, Описание, Даташиты
S29WS512P
S29WS256P
S29WS128P
512/256/128 Mb (32/16/8 M x 16 bit), 1.8 V,
Simultaneous Read/Write Flash
Features
Single 1.8 V read/program/erase (1.70–1.95 V)
90 nm MirrorBit™ Technology
Simultaneous Read/Write operation with zero latency
Random page read access mode of 8 words with 20 ns intra page
access time
32 Word / 64 Byte Write Buffer
Sixteen-bank architecture consisting of
32/16/8 Mwords for 512/256/128P, respectively
Four 16 Kword sectors at both top and bottom of memory array
510/254/126 64Kword sectors (WS512/256/128P)
Programmable linear (8/16/32) with or without wrap around and
continuous burst read modes
Secured Silicon Sector region consisting of 128 words each for
factory and 128 words for customer
20-year data retention (typical)
Cycling Endurance: 100,000 cycles per sector (typical)
Command set compatible with JEDEC (42.4) standard
Hardware (WP#) protection of top and bottom sectors
Dual boot sector configuration (top and bottom)
Handshaking by monitoring RDY
Offered Packages
– WS512P/WS256P/WS128P: 84-ball FBGA
(11.6 mm x 8 mm)
Low VCC write inhibit
Persistent and Password methods of Advanced Sector Protection
Write operation status bits indicate program and erase operation
completion
Suspend and Resume commands for Program and Erase
operations
Unlock Bypass program command to reduce programming time
Synchronous or Asynchronous program operation, independent of
burst control register settings
ACC input pin to reduce factory programming time
Support for Common Flash Interface (CFI)
General Description
The Spansion S29WS512/256/128P are Mirrorbit® Flash products fabricated on 90 nm process technology. These burst mode
Flash devices are capable of performing simultaneous read and write operations with zero latency on two separate banks using
separate data and address pins. These products can operate up to 104 MHz and use a single VCC of 1.7 V to 1.95 V that makes
them ideal for today’s demanding wireless applications requiring higher density, better performance and lowered power
consumption.
Performance Characteristics
Read Access Times
Speed Option (MHz)
Max. Synch Access Time (tIACC)
Max. Synch. Burst Access, ns (tBACC)
Max OE# Access Time, ns (tOE)
Max. Asynch. Access Time, ns (tACC)
104
103.8
7.6
7.6
80
Current Consumption (typical values)
Continuous Burst Read @ 104 MHz
Simultaneous Operation 104 MHz
Program
Standby Mode
Typical Program & Erase Times
Single Word Programming
Effective Write Buffer Programming (VCC) Per Word
Effective Write Buffer Programming (VACC) Per Word
Sector Erase (16 Kword Sector)
Sector Erase (64 Kword Sector)
36 mA
40 mA
20 mA
20 µA
40 µs
9.4 µs
6 µs
350 ms
600 ms
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 002-01747 Rev. *A
• San Jose, CA 95134-1709 • 408-943-2600
Revised December 17, 2015









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S29WS512P Даташит, Описание, Даташиты
S29WS512P
S29WS256P
S29WS128P
Contents
1. Ordering Information ................................................... 3
1.1 Valid Combinations ........................................................ 3
2. Input/Output Descriptions & Logic Symbol .............. 4
3. Block Diagrams............................................................ 5
4. Physical Dimensions/Connection Diagrams............. 5
4.1 Related Documents ....................................................... 5
4.2 Special Handling Instructions for FBGA Package.......... 5
4.3 MCP Look-ahead Connection Diagram ......................... 7
5. Additional Resources .................................................. 8
6. Product Overview ........................................................ 9
6.1 Memory Map .................................................................. 9
7. Device Operations ..................................................... 11
7.1 Device Operation Table ............................................... 12
7.2 Asynchronous Read..................................................... 12
7.3 Page Mode Read ......................................................... 13
7.4 Synchronous (Burst) Read Operation.......................... 13
7.5 Synchronous (Burst) Read Mode & Configuration
Register........................................................................ 21
7.6 Autoselect .................................................................... 24
7.7 Program/Erase Operations .......................................... 27
7.8 Simultaneous Read/Program or Erase ........................ 43
7.9 Writing Commands/Command Sequences.................. 43
7.10 Handshaking ................................................................ 43
7.11 Hardware Reset ........................................................... 44
7.12 Software Reset ............................................................ 44
8. Advanced Sector Protection/Unprotection ............. 45
8.1 Advanced Sector Protection Software Examples ........ 46
8.2 Lock Register ............................................................... 46
8.3 Persistent Protection Bits............................................. 47
8.4 Dynamic Protection Bits............................................... 49
8.5 Persistent Protection Bit Lock Bit................................. 49
8.6 Password Protection Method ....................................... 50
8.7 Hardware Data Protection Methods............................. 51
9. Power Conservation Modes...................................... 53
9.1 Standby Mode.............................................................. 53
9.2 Automatic Sleep Mode................................................. 53
9.3 Hardware RESET# Input Operation............................. 53
9.4 Output Disable (OE#)................................................... 53
10. Secured Silicon Sector Flash Memory Region ....... 54
10.1 Factory Secured Silicon Sector.................................... 54
10.2 Customer Secured Silicon Sector ................................ 55
10.3 Secured Silicon Sector Entry/Exit Command
Sequences ................................................................... 55
11. Electrical Specifications............................................ 57
11.1 Absolute Maximum Ratings ......................................... 57
11.2 Operating Ranges........................................................ 57
11.3 DC Characteristics ....................................................... 58
11.4 Test Conditions ............................................................ 59
11.5 Key to Switching Waveforms ....................................... 59
11.6 Switching Waveforms .................................................. 59
11.7 Power-up/Initialization................................................... 60
11.8 CLK Characterization.................................................... 60
11.9 AC Characteristics ........................................................ 61
11.10Erase and Programming Performance ......................... 74
12. Appendix ..................................................................... 75
12.1 Common Flash Memory Interface................................. 79
13. Revision History.......................................................... 83
Document Number: 002-01747 Rev. *A
Page 2 of 86









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S29WS512P Даташит, Описание, Даташиты
S29WS512P
S29WS256P
S29WS128P
1. Ordering Information
The ordering part number is formed by a valid combination of the following:
S29WS 512 P xx BA W 00 0
Packing Type
0 = Tray (standard; see note 1)
2 = 7-inch Tape and Reel
3 = 13-inch Tape and Reel
Model Number
(Chip Enable Options)
00 = Default
Temperature Range
W = Wireless (–25C to +85C)
Package Type And Material
BA = Very Thin Fine-Pitch BGA, Lead (Pb)-free Compliant Package
BF = Very Thin Fine-Pitch BGA, Lead (Pb)-free Package
Speed Option (Burst Frequency)
0L = 54 MHz
0P = 66 MHz
0S = 80 MHz
AB = 104 MHz
Process Technology
P = 90 nm MirrorBit®Technology
Flash Density
512= 512 Mb
256= 256 Mb
128= 128 Mb
Device Family
S29WS =1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
1.1 Valid Combinations
Valid Combinations list configurations planned to be supported in volume for this device. Consult your local sales office to confirm
availability of specific valid combinations and to check on newly released combinations.
Base Ordering
Part Number
S29WS512P
S29WS256P
S29WS128P
S29WS512P Valid Combinations (Notes 1, 2)
Product
Status
Speed
Option
Package Type, Material, &
Temperature Range
Packing
Type
Model
Numbers
Advance
0L, 0P,
0S, AB
BAW (Lead (Pb)-free
Compliant),
BFW (Lead (Pb)-free)
0, 2, 3
(Note 1)
00
Notes:
1. Type 0 is standard. Specify other options as required.
2. BGA package marking omits leading S29 and packing type designator from ordering part number.
Package Type
(Note 2)
11.6 mm x 8 mm
84-ball
MCP-Compatible
11.6 mm x 8 mm
84-ball
MCP-Compatible
Document Number: 002-01747 Rev. *A
Page 3 of 86










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