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ZXGD3112N7 PDF даташит

Спецификация ZXGD3112N7 изготовлена ​​​​«Diodes» и имеет функцию, называемую «400V ACTIVE OR-ING MOSFET CONTROLLER».

Детали детали

Номер произв ZXGD3112N7
Описание 400V ACTIVE OR-ING MOSFET CONTROLLER
Производители Diodes
логотип Diodes логотип 

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ZXGD3112N7 Даташит, Описание, Даташиты
ZXGD3112N7
400V ACTIVE OR-ING MOSFET CONTROLLER IN SO7
Description
ZXGD3112N7 is a 400V Active OR-ing MOSFET controller designed
for driving a very low RDS(ON) power MOSFET as an ideal diode. This
replaces the standard rectifier to reduce the forward voltage drop and
overall increase the power transfer efficiency.
The ZXGD3112N7 can be used on both high-side and low-side power
supply units (PSU) with rails up to ±400V. It enables very low RDS(ON)
MOSFETs to operate as ideal diodes as the turn-off threshold is
only -3mV with ±2mV tolerance. In the typical 48V configuration, the
standby power consumption is <50mW as the low quiescent supply
current is <1mA. During PSU fault condition, the OR-ing Controller
detects the power reduction and rapidly turns off the MOSFET in
<600ns to block reverse current flow and avoid the common bus
voltage dropping.
Features
Active OR-ing MOSFET Controller for High- or Low-Side PSU
Ideal Diode to Reduce Forward Voltage Drop
-3mV Typical Turn-Off Threshold with ±2mV Tolerance
400V Drain Voltage Rating
25V VCC Rating
<50mW Standby Power with Quiescent Supply Current <1mA
<600ns Turn-Off Time to Minimize Reverse Current
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony free. “Green” Device (Note 3)
Applications
Active OR-ing Controller in:
(N + 1) Redundant Power Supplies
Telecom and Networking
Data Centers and Servers
Mechanical Data
Case: SO-7
Case material: Molded Plastic. “Green” Molding Compound
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.074 grams (Approximate)
-ve Rail
Typical Configuration for
Low-Side -ve Supply Rail
VD VS
-ve Vout
DRAIN
VG
GATE GND
ZXGD3112
Vcc
C1
GND Rail
GND
Top View
SO-7
GND
GND
GND
Vcc
GATE
GATE
Top View
Pin-Out
DRAIN
PGND
PGND
Pin Name
GND
VCC
GATE
PGND
DRAIN
Pin Function
Ground
Power Supply
Gate Drive
Power Ground
Drain Sense
Ordering Information (Note 4)
Product
ZXGD3112N7TC
Marking
ZXGD3112
Reel Size (inches)
13
Tape Width (mm)
12
Quantity per Reel
2,500
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free,
"Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
ZXGD
3112
YY WW
ZXGD = Product Type Marking Code, Line 1
3112 = Product Type Marking Code, Line 2
YY = Year (ex: 15 = 2015)
WW = Week (01 - 53)
ZXGD3112N7
Document Number DS37739 Rev. 1 - 2
1 of 10
www.diodes.com
September 2015
© Diodes Incorporated









No Preview Available !

ZXGD3112N7 Даташит, Описание, Даташиты
ZXGD3112N7
Absolute Maximum Ratings (Voltage relative to GND, @ TA = +25°C, unless otherwise specified.)
Characteristic
Supply Voltage
Drain Pin Voltage
Gate Output Voltage**
Gate Driver Peak Source Current
Gate Driver Peak Sink Current
**Gate voltage is clamped to 12V
Symbol
VCC
VD
VG
ISOURCE
ISINK
Value
25
-3 to 400
-3 to VCC + 3
2
5
Unit
V
V
V
A
A
Thermal Characteristics
Characteristic
Power Dissipation
Linear Derating Factor
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
(Note 5)
(Note 6)
(Note 7)
(Note 8)
(Note 5)
(Note 6)
(Note 7)
(Note 8)
(Note 9)
Symbol
PD
RθJA
RθJL
TJ, TSTG
Value
490
3.92
655
5.24
720
5.76
785
6.28
255
191
173
159
135
-50 to +150
Unit
mW
mW/°C
°C/W
°C/W
°C
ESD Ratings (Note 10)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Symbol
ESD HBM
ESD MM
Value
2,000
200
Unit
V
V
JEDEC Class
3A
B
Notes:
5. For a device surface mounted on minimum recommended pad layout FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the
device is measured when operating in a steady-state condition.
6. Same as Note 5, except pin 3 (VCC) and pins 5 & 6 (PGND) are both connected to separate 5mm x 5mm 1oz copper heat-sinks.
7. Same as Note 6, except both heat-sinks are 10mm x 10mm.
8. Same as Note 6, except both heat-sinks are 15mm x 15mm.
9. Thermal resistance from junction to solder-point at the end of each lead on pins 2 & 3 (GND) and pins 5 & 6 (VCC).
10. Refer to JEDEC specification JESD22-A114 and JESD22-A11
Thermal Derating Curve
ZXGD3112N7
Document Number DS37739 Rev. 1 - 2
0.8
0.7 15mm x 15mm
0.6 10mm x 10mm
0.5
0.4
0.3
Minimum
Layout
0.2
5mm x 5mm
0.1
0.0
0
20 40 60 80 100 120 140 160
Junction Temperature (°C)
Derating Curve
2 of 10
www.diodes.com
September 2015
© Diodes Incorporated









No Preview Available !

ZXGD3112N7 Даташит, Описание, Даташиты
ZXGD3112N7
Electrical Characteristics (@ VCC = 12V, TA = +25°C, unless otherwise specified.)
Characteristic
Input Supply
Operating Supply Voltage
Quiescent Current
Drain Low Input current
Drain High Input current
Gate Driver
Gate Peak Source Current
Gate Peak Sink Current
Gate Peak Source Current (Note 11)
Gate Peak Sink Current (Note 11)
Detector Under DC Condition
Turn-off Threshold Voltage
Symbol
VCC
IQ
IDL
IDH
ISOURCE
ISINK
ISOURCE
ISINK
VT
Min
4
-100
1
1.8
-5
Typ
260
-15
0.85
0.66
3.3
-3
Max
20
400
10
-1
Unit
V
µA
nA
µA
A
A
A
mV
VG(OFF)
0.1 0.3
Gate Output Voltage
VG
VG(OFF)
VG
VG(OFF)
10.5
2.5
10.85
0.1
2.85
0.1
0.3
0.3
V
VG 10.5 11.2
Switching Performance
Turn-On Propagation Delay
Gate Rise Time
Turn-Off Propagation Delay
Gate Fall Time
tD(RISE)
tR
tD(FALL)
tF
400
695
400
131
Note:
11. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤ 2%.
nS
Test Condition
-0.6V VDRAIN 400V
VD = -0.1V
VD = 400V
CL = 47nF
VGATE = 5V & VDRAIN = -1V
VGATE = 5V & VDRAIN = 1V
VG 1V
VDRAIN ≥ 0mV &
VCC = 12V
VDRAIN = -8mV &
VCC = 12V
VDRAIN ≥ 0mV &
VCC = 4V
VDRAIN = -8mV &
VCC = 4V
VDRAIN 0mV &
VCC = 20V
VDRAIN = -8mV &
VCC = 20V
Load: 50nF capacitor
connected in parallel
with 50kresistor
CL = 47nF
Rise and Fall Measured 10% to 90%
Refer to Application Test Circuit Below
Pin Functions
Pin Number Pin Name
1, 2 GND
3 VCC
4 GATE
5, 6 PGND
7 DRAIN
Pin Function and Description
Ground
Connect this pin to the MOSFET source terminal and ground reference point.
Power Supply
This supply pin should be closely decoupled to ground with a X7R type capacitor.
Gate Drive
This pin sources (ISOURCE) and sinks (ISINK) current into the MOSFET gate. If VCC > 12V, then the GATE-to-GND
will clamp at 12V. The turn on time of the MOSFET can be programmed through an external gate resistor (RG).
Power Ground
Connect this pin to the MOSFET source terminal and ground reference point.
Drain Sense
Connect this pin to the MOSFET drain terminal to detect the change in drain-source voltage.
GND
GND
VCC
Gate
DRAIN
PGND
PGND
ZXGD3112N7
Document Number DS37739 Rev. 1 - 2
3 of 10
www.diodes.com
September 2015
© Diodes Incorporated










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