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SBRT3M60P1 PDF даташит

Спецификация SBRT3M60P1 изготовлена ​​​​«Diodes» и имеет функцию, называемую «TRENCH SUPER BARRIER RECTIFIER».

Детали детали

Номер произв SBRT3M60P1
Описание TRENCH SUPER BARRIER RECTIFIER
Производители Diodes
логотип Diodes логотип 

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SBRT3M60P1 Даташит, Описание, Даташиты
Green SBRT3M60P1
3A TrenchSBR
TRENCH SUPER BARRIER RECTIFIER
POWERDI®123
Product Summary (@TA = +25°C)
VRRM (V)
60
IO (A)
3
VF max (V)
0.59
IR max (mA)
0.1
Description and Application
Packaged in the compact thermally efficient POWERDI®123 package,
the SBRT3M60P1 provides very low reverse leakage and excellent
VF stability at high temperatures. It is ideally suited to use as a
rectifier diode in MR16 bridge rectifier applications.
Bridge Diodes
Blocking Diodes
Reverse Protection Diodes
POWERDI®123
Features and Benefits
Reduced Low Forward Voltage Drop (VF); Better Efficiency and
Cooler Operation
Reduced High Temperature Reverse Leakage; Increased
Reliability Against Thermal Runaway Failure in High
Temperature Operation
<1.1mm Package Profile Ideal for Thin Applications
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: POWERDI®123
Case Material: Molded Plastic, ―Green‖ Molding Compound; UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 0.01 grams (Approximate)
Top View
Device Symbol
Ordering Information (Note 4)
Notes:
Part Number
SBRT3M60P1-7
Case
POWERDI®123
Packaging
3,000/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
POWERDI®123
Date Code Key
Year
Code
2013
A
2014
B
2015
C
TV6 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: C = 2015)
M = Month (ex: 9 = September)
2016
D
2017
E
2018
F
Month
Jan
Feb Mar
Apr May Jun
Jul
Aug Sep
Code
1
2
3
4
5
6
7
8
9
SBR and POWERDI are registered trademarks of Diodes Incorporated.
SBRT3M60P1
1 of 5
Document number: DS37761 Rev. 3 - 2
www.diodes.com
2019
G
2020
H
Oct Nov Dec
OND
November 2015
© Diodes Incorporated









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SBRT3M60P1 Даташит, Описание, Даташиты
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
Symbol
VRRM
VRWM
VRM
IO
IFSM
SBRT3M60P1
Value
60
3
70
Unit
V
A
A
Thermal Characteristics
Characteristic
Typical Thermal Resistance Junction to Ambient (Note 5)
Typical Thermal Resistance Junction to Case (Note 5)
Operating and Storage Temperature Range
Symbol
RθJA
RθJC
TJ, TSTG
Value
60
2.4
-65 to +150
Unit
°C/W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Forward Voltage Drop (Note 6)
Leakage Current (Note 6)
Symbol
VF
IR
Min
Typ
0.52
Notes:
5. Device mounted on 1inch sq. copper pad,2oz.
6. Short duration pulse test used to minimize self-heating effect.
Max
0.59
0.57
0.1
15
Unit
V
mA
Test Condition
IF = 3A, TJ = +25°C
IF = 3A, TJ = +125°C
VR = 60V, TJ = +25°C
VR = 60V, TJ = +125°C
10
1 150
0.1 125
0.01
85
0.001
25
-55
0.0001
0 100 200 300 400 500 600
VF,INSTANTANEOUS FORWARD VOLTAGE (mV)
Figure 1. Typical Forward Characteristics
10000
1000
100
150
125
85
10
25
1
0 10 20 30 40 50 60
VR, REVERSE VOLTAGE (V)
Figure 2. Typical Reverse Characteristics
SBR and POWERDI are registered trademarks of Diodes Incorporated.
SBRT3M60P1
2 of 5
Document number: DS37761 Rev. 3 - 2
www.diodes.com
November 2015
© Diodes Incorporated









No Preview Available !

SBRT3M60P1 Даташит, Описание, Даташиты
3.5
3
Note 5
2.5
2
1.5
1
0.5
0
25
100000
50 75 100 125
TA, AMBIENT TEMPERATURE ()
Figure 3. DC Forward Current Derating
150
10000
f=1MHz
1000
100
10
0
10 20 30
VR, REVERSE VOLTAGE (V)
Figure 5. Typical Junction Capacitance
40
SBRT3M60P1
2.5
2 TJ=150
1.5
1
0.5
0
012345
IF(AV), AVERAGE FORWARD CURRENT (A)
Figure 4. Forward Power Dissipation
SBR and POWERDI are registered trademarks of Diodes Incorporated.
SBRT3M60P1
3 of 5
Document number: DS37761 Rev. 3 - 2
www.diodes.com
November 2015
© Diodes Incorporated










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