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HBR10150S PDF даташит

Спецификация HBR10150S изготовлена ​​​​«Jilin Sino» и имеет функцию, называемую «SCHOTTKY BARRIER DIODE».

Детали детали

Номер произв HBR10150S
Описание SCHOTTKY BARRIER DIODE
Производители Jilin Sino
логотип Jilin Sino логотип 

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HBR10150S Даташит, Описание, Даташиты
肖特基势垒二极管
R SCHOTTKY BARRIER DIODE
HBR10150S
主要参数
IF(AV)
VRRM
Tj
VF(max)
MAIN
CHARACTERISTICS
102×5A
150 V
175
0.72V @Tj=125℃)
用途
l 高频开关电源
l 低压续流电路和保护电
APPLICATIONS
l High frequency switch
power supply
l Free wheeling diodes,
polarity protection
applications
封装 Package
TO-22O
TO-22OHF
TO-263
TO-262
产品特性
l共阴结构
l低功耗,高效率
l良好的高温特性
l有过压保护环,高可靠性
l环保(RoHS)产品
FEATURES
lCommon cathode structure
lLow power loss, high efficiency
lHigh Operating Junction
Temperature
lGuard ring for overvoltage
protectionHigh reliability
lRoHS product
DPAKM
订货信息 ORDER MESSAGE
订货型号
印记
封装
Order codes
Marking
Package
HBR10150SZ
HBR10150S TO-220
HBR10150SZR HBR10150S TO-220
HBR10150SHF HBR10150S TO-220HF
HBR10150SHFR HBR10150S TO-220HF
HBR10150SS
HBR10150S TO-263
HBR10150SSR HBR10150S TO-263
HBR10150SS
HBR10150S TO-263
HBR10150SSR HBR10150S TO-263
HBR10150SB
HBR10150S TO-262
HBR10150SBR HBR10150S TO-262
HBR10150SVM HBR10150S IPAKM
HBR10150SVMR HBR10150S IPAKM
HBR10150SRM HBR10150S DPAKM
HBR10150SRMR HBR10150S DPAKM
无卤素
Halogen Free
NO
YES
NO
YES
NO
YES
NO
YES
NO
YES
NO
YES
NO
YES
包装
Packaging
条管 Tube
条管 Tube
条管 Tube
条管 Tube
条管 Tube
条管 Tube
编带 Reel
编带 Reel
条管 Tube
条管 Tube
条管 Tube
条管 Tube
编带 Reel
编带 Reel
IPAKM
器件重量
Device Weight
1.98 g(typ)
1.98 g(typ)
1.70 g(typ)
1.70 g(typ)
1.40 g(typ)
1.40 g(typ)
1.40 g(typ)
1.40 g(typ)
1.70 g(typ)
1.70 g(typ)
0.38 g(typ)
0.38 g(typ)
0.33 g(typ)
0.33 g(typ)
版本(Rev.)201507C
1/10









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HBR10150S Даташит, Описание, Даташиты
R
绝对最大额定值 ABSOLUTE RATINGS (Tc=25)
项目
符号
Parameter
Symbol
最大反向重复峰值电压
Repetitive peak reverse voltage
VRRM
最大直流阻断电压
Maximum DC blocking voltage
VDC
正向平均整流电流 TC=150
整个器件
Average forward (TO-220/263/262 per device
current
/IPAKM/DPAKM)
TC=125
(TO-220HF)
单侧
per diode
IF(AV)
正向峰值浪涌电流
Surge non repetitive forward current
(额定负载 8.3ms 半正弦波JEDEC 方法)
IFSM
8.3 ms single half-sine-wave (JEDEC Method)
最高结温
Maximum junction temperature
Tj
储存温度
Storage temperature range
TSTG
HBR10150S
数值
Value
150
单位
Unit
V
150 V
10
A
5
85 A
175
-40~+150
电特性 ELECTRICAL CHARACTERISTICS
项目
测试条件
最小值 典型值
最大值
Parameter
IR
Tests conditions
Tj =25
Tj =125
VR=VRRM
Value(min) Value(typ) Value(max)
10
5
Tj =25
Tj =125
IF=5A
VF Tj =25
Tj =125
IF=10A
0.81 0.9
0.67 0.72
0.89 0.95
0.76 0.8
单位
Unit
µA
mA
V
V
V
V
热特性 THERMAL CHARACTERISTICS
项目
符号
Parameter
Symbol
TO-220
结到管壳的热阻
Thermal resistance from
TO-263
TO-262
IPAKM
Rth(j-c)
junction to case
DPAKM
TO-220HF
最小值
Value(min)
最大值 单 位
Value(max) Unit
2.2
2.2
2.2 /W
2.5
2.5
3.0
版本(Rev.)201507C
2/10









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HBR10150S Даташит, Описание, Даташиты
R HBR10150S
特征曲线 ELECTRICAL CHARACTERISTICS (curves)
IF vs VF
IR vs VR
IF(AV) vs TC
CT vs VR
版本(Rev.)201507C
3/10










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