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NRVTSAF260E PDF даташит

Спецификация NRVTSAF260E изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Very Low Forward Voltage Trench-based Schottky Rectifier».

Детали детали

Номер произв NRVTSAF260E
Описание Very Low Forward Voltage Trench-based Schottky Rectifier
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NRVTSAF260E Даташит, Описание, Даташиты
NRTSAF260E,
NRVTSAF260E
Very Low Forward Voltage
Trench-based Schottky
Rectifier
Features
Fine Lithography Trench−based Schottky Technology for Very Low
Forward Voltage and Low Leakage
Fast Switching with Exceptional Temperature Stability
Low Power Loss and Lower Operating Temperature
Higher Efficiency for Achieving Regulatory Compliance
Low Thermal Resistance
High Surge Capability
NRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These are Pb−Free and Halide−Free Devices
Mechanical Characteristics:
Case: Molded Epoxy
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight: 95 mg (Approximately)
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Maximum for 10 Seconds
MSL 1
Typical Applications
Switching Power Supplies including Compact Adapters and Flat
Panel Display
High Frequency and DC−DC Converters
Freewheeling and OR−ing diodes
Reverse Battery Protection
Instrumentation
Automotive LED Lighting (Interior and Exterior)
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TRENCH SCHOTTKY
RECTIFIER
2.0 AMPERES
60 VOLTS
SMA−FL
CASE 403AA
SYTLE 6
MARKING DIAGRAM
26E
AYWWG
26E = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
NRTSAF260ET3G
Package
SMA−FL
(Pb−Free)
Shipping
10,000/
Tape & Reel
NRVTSAF260ET3G
SMA−FL
10,000/
(Pb−Free) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016
November, 2016 − Rev. 3
1
Publication Order Number:
NRTSAF260E/D









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NRVTSAF260E Даташит, Описание, Даташиты
NRTSAF260E, NRVTSAF260E
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(TL = 150°C)
Peak Repetitive Forward Current
(Square Wave, 20 kHz, TL = 147°C)
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
VRRM
VRWM
VR
IO
IFRM
IFSM
60 V
2.0 A
4.0 A
50 A
Storage and Operating Junction Temperature Range (Note 1)
Tstg, TJ
−65 to +175
°C
Voltage Rate of Change
(Rated VR, TJ = 25°C)
dv/dt
10,000
V/ms
Controlled Avalanche Energy
WAVAL
20 mJ
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction−to−Lead (Note 2)
Thermal Resistance, Junction−to−Ambient (Note 2)
Thermal Resistance, Junction−to−Ambient (Note 3)
ELECTRICAL CHARACTERISTICS
YJCL
RqJA
RqJA
24.6 °C/W
79 °C/W
239 °C/W
Characteristic
Symbol Typ Max Unit
Maximum Instantaneous Forward Voltage (Note 4)
(IF = 1.0 A, TJ = 25°C)
(IF = 2.0 A, TJ = 25°C)
(IF = 1.0 A, TJ = 125°C)
(IF = 2.0 A, TJ = 125°C)
VF V
0.47 0.55
0.38 0.65
0.53 0.47
0.47 0.58
Maximum Instantaneous Reverse Current (Note 4)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 125°C)
IR
3.0 12 mA
1.0 3.0 mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Mounted with 700 mm2 copper pad size (Approximately 1 in2) 1 oz FR4 Board.
3. Mounted with pad size approximately 20 mm2 copper, 1 oz FR4 Board.
4. Pulse Test: Pulse Width 380 ms, Duty Cycle 2.0%.
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NRVTSAF260E Даташит, Описание, Даташиты
NRTSAF260E, NRVTSAF260E
TYPICAL CHARACTERISTICS
100 100
10 TA = 175°C
TA = 150°C
TA = 125°C
1
TA = 85°C
TA = 25°C
0.1 TA = −55°C
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Instantaneous Forward
Characteristics
10
TA = 175°C
TA = 150°C
1 TA = 125°C
TA = 85°C
TA = 25°C
0.1
0.1
0.3
TA = −55°C
0.5 0.7
0.9
1.1
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 2. Maximum Instantaneous Forward
Characteristics
1.E−01
1.E−02
1.E−03
1.E−04
1.E−05
TA = 175°C
TA = 150°C
TA = 125°C
TA = 85°C
1.E−01
1.E−02
1.E−03
1.E−04
TA = 175°C
TA = 150°C
TA = 125°C
TA = 85°C
1.E−06
TA = 25°C
1.E−05
TA = 25°C
1.E−07
5 10 15 20 25 30 35 40 45 50 55 60
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Characteristics
1.E−06
5 10 15 20 25 30 35 40 45 50 55 60
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 4. Maximum Reverse Characteristics
1000
100
TJ = 25°C
10
0.1
1
10
VR, REVERSE VOLTAGE (V)
Figure 5. Typical Junction Capacitance
3.5
DC
3.0
2.5 SQUARE WAVE
2.0
1.5
1.0
0.5 RqJL = 24.6°C/W
0
0 20 40 60 80 100 120 140 160
TL, LEAD TEMPERATURE (°C)
Figure 6. Current Derating
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Номер в каталогеОписаниеПроизводители
NRVTSAF260EVery Low Forward Voltage Trench-based Schottky RectifierON Semiconductor
ON Semiconductor

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