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NRTSV30H120CT PDF даташит

Спецификация NRTSV30H120CT изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Low Forward Voltage Trench-based Schottky Rectifier».

Детали детали

Номер произв NRTSV30H120CT
Описание Low Forward Voltage Trench-based Schottky Rectifier
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NRTSV30H120CT Даташит, Описание, Даташиты
NRTSV30H120CT
Low Forward Voltage
Trench-based Schottky
Rectifier
Features
Fine Lithography Trench−based Schottky Technology for Very Low
Forward Voltage and Low Leakage
Fast Switching with Exceptional Temperature Stability
Low Power Loss and Lower Operating Temperature
Higher Efficiency for Achieving Regulatory Compliance
Low Thermal Resistance
High Surge Capability
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
Switching Power Supplies including Notebook / Netbook Adapters,
ATX and Flat Panel Display
High Frequency and DC−DC Converters
Freewheeling and OR−ing diodes
Reverse Battery Protection
Instrumentation
Mechanical Characteristics
Case: Epoxy, Molded
Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes: 260°C Maximum for
10 sec
www.onsemi.com
PIN CONNECTIONS
1
2, 4
3
4
1
2
3
TO−220AB
CASE 221A
STYLE 6
MARKING DIAGRAM
AY WW
TS30H120G
AKA
TS30H120G = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
AKA = Polarity Designator
G = Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2016
May, 2016 − Rev. 1
1
Publication Order Number:
NRTSV30H120CT/D









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NRTSV30H120CT Даташит, Описание, Даташиты
NRTSV30H120CT
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR, TC = 124°C)
(Rated VR, TC = 134°C)
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz, TC = 119°C)
(Rated VR, Square Wave, 20 kHz, TC = 132°C)
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
Per device
Per diode
Per device
Per diode
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
120
30
15
60
30
125
V
A
A
A
Operating Junction Temperature
TJ
−55 to +150
°C
Storage Temperature
Tstg −55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Rating
Maximum Thermal Resistance per Device (Note 1) Junction−to−Case
Junction−to−Ambient
1. Assumes 150 mm2 1 oz. copper bond pad, on a FR4 board.
Symbol
RqJC
RqJA
Value
1.0
69.3
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (Per Leg unless otherwise noted)
Rating
Symbol Typ
Max Unit
Maximum Instantaneous Forward Voltage (Note 2)
(IF = 7.5 A, TJ = 25°C)
(IF = 15 A, TJ = 25°C)
vF
0.65
V
0.87 0.93
(IF = 7.5 A, TJ = 125°C)
(IF = 15 A, TJ = 125°C)
Maximum Instantaneous Reverse Current (Note 2)
(VR = 90 V, TJ = 25°C)
(VR = 90 V, TJ = 125°C)
0.56 −
0.66 0.70
IR
3.8
4.3
mA
mA
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 125°C)
8.6 35 mA
7.2 15 mA
Diode Capacitance
(Rated dc Voltage, TJ = 25°C)
Cd
95
− pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%
ORDERING INFORMATION
Device
NRTSV30H120CTG
Package
TO−220AB
(Pb−Free)
Shipping
50 Units / Rail
www.onsemi.com
2









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NRTSV30H120CT Даташит, Описание, Даташиты
NRTSV30H120CT
TYPICAL CHARACTERISTICS
100.0
TJ = 125°C
10.0 TJ = 150°C
100.0
TJ = 125°C
10.0 TJ = 150°C
TJ = −55°C
1.0
TJ = 25°C
TJ = 85°C
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Instantaneous Forward
Characteristics
1.6
TJ = −55°C
1.0
TJ = 25°C
TJ = 85°C
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 2. Maximum Instantaneous Forward
Characteristics
1.E−01
1.E−02
1.E−03
1.E−04
TJ = 150°C
TJ = 125°C
TJ = 85°C
1.E−01
1.E−02
1.E−03
1.E−04
TJ = 150°C
TJ = 125°C
TJ = 85°C
1.E−05
TJ = 25°C
1.E−05
TJ = 25°C
1.E−06
10
20 30 40 50 60 70 80 90 100 110 120
VF, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Characteristics
1.E−06
10 20 30 40 50 60 70 80 90 100 110120
VF, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 4. Maximum Reverse Characteristics
10,000
1,000
TJ = 25°C
100
10
0.1
1 10
VR, REVERSE VOLTAGE (V)
Figure 5. Typical Junction Capacitance
100
30
25 dc
20
Square Wave
15
RqJC = 1.5°C/W
10
5
0
0 10 20 30 40 50 60 70 80 90 100110120130140150
TC, CASE TEMPERATURE (°C)
Figure 6. Current Derating per Leg
www.onsemi.com
3










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Номер в каталогеОписаниеПроизводители
NRTSV30H120CTLow Forward Voltage Trench-based Schottky RectifierON Semiconductor
ON Semiconductor

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