NSR01L30MX PDF даташит
Спецификация NSR01L30MX изготовлена «ON Semiconductor» и имеет функцию, называемую «Schottky Barrier Diode». |
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Детали детали
Номер произв | NSR01L30MX |
Описание | Schottky Barrier Diode |
Производители | ON Semiconductor |
логотип |
4 Pages
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NSR01L30MX
Schottky Barrier Diode
These Schottky barrier diodes are optimized for low forward
voltage drop and low leakage current.
Features
• Very Low Forward Voltage Drop − 350 mV @ 1 mA
• Low Reverse Current − 0.2 mA @ 10 V
• 100 mA of Continuous Forward Current
• ESD Rating − Human Body Model: Class 3B
ESD Rating − Machine Model: Class C
• This is a Halide−Free Device
• This is a Pb−Free Device
Typical Applications
• LCD and Keypad Backlighting
• Camera Photo Flash
• Buck and Boost dc−dc Converters
• Reverse Voltage and Current Protection
• Clamping & Protection
Markets
• Mobile Handsets
• MP3 Players
• Digital Camera and Camcorders
• Notebook PCs & PDAs
• GPS
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Reverse Voltage
VR 30 V
Forward Current (DC)
IF 100 mA
Forward Surge Current
IFSM
(60 Hz @ 1 cycle)
2.0
A
ESD Rating:
Human Body Model
Machine Model
ESD
>8.0
>400
kV
V
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
www.onsemi.com
30 V SCHOTTKY
BARRIER DIODE
1
CATHODE
2
ANODE
X3DFN2
CASE 152AF
MARKING
DIAGRAM
PIN 1
M
L = Specific Device Code
(Rotated 180°)
M = Date Code
ORDERING INFORMATION
Device
Package
Shipping†
NSR01L30MXT5G X3DFN2
(Pb−Free)
10000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016
April, 2016 − Rev. 2
1
Publication Order Number:
NSR01L30MX/D
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NSR01L30MX
THERMAL CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Power Dissipation @ TA = 25°C
RqJA
PD
695
180
Storage Temperature Range
Tstg −55 to +150
Junction Temperature
TJ +150
1. Mounted onto a 4 in square FR−4 board 100 mm sq. 2 oz. Cu 0.06” thick single−sided. Operating to steady state.
Unit
°C/W
mW
°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Reverse Leakage
(VR = 10 V)
(VR = 30 V)
IR mA
0.2
0.5
Forward Voltage
(IF = 1 mA)
(IF = 10 mA)
VF V
0.35
0.46
Total Capacitance
(VR = 5.0 V, f = 1 MHz)
CT 0.8 pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
2
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NSR01L30MX
TYPICAL CHARACTERISTICS
100 1000
150°C
100
10 150°C
75°C
10
125°C
1
75°C
125°C
25°C
0.1
25°C
1
0.01
−25°C
−25°C
0.001
−55°C
0.1 0.0001
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
0 5 10 15 20 25 30
VF, FORWARD VOLTAGE (V)
VR, REVERSE VOLTAGE (V)
Figure 1. Forward Voltage
Figure 2. Leakage Current
2.5
TA = 25°C
2
1.5
1
0.5
0
0 5 10 15 20 25 30
VR, REVERSE VOLTAGE (V)
Figure 3. Total Capacitance
www.onsemi.com
3
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Номер в каталоге | Описание | Производители |
NSR01L30MX | Schottky Barrier Diode | ON Semiconductor |
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