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PDF WFD5N50 Data sheet ( Hoja de datos )

Número de pieza WFD5N50
Descripción Silicon N-Channel MOSFET
Fabricantes Winsemi 
Logotipo Winsemi Logotipo



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No Preview Available ! WFD5N50 Hoja de datos, Descripción, Manual

Features
■ 5A,500V,RDS(on)(Max1.6Ω)@VGS=10V
■ Ultra-low Gate Charge(Typical 32nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
■ Maximum Junction Temperature Range(150)
WFD5N50
Silicon N-Channel MOSFET
General Description
This Power MO SFET is pro du ced using Winse mi ’s ad van ced
plana r stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche charact er istics. This devices is spe cially well
suited for high efficiency switch model power supplies, power factor
correction and half bridge and full bridge resonant topology line a
electronic lamp ballast.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
Drain Source Voltage
Continuous Drain Current(@Tc=25)
ID
Continuous Drain Current(@Tc=100)
IDM Drain Current Pulsed
VGS Gate to Source Voltage
EAS Single Pulsed Avalanche Energy
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
Total Power Dissipation(@Tc=25)
PD
Derating Factor above 25
TJ, Tstg
Junction and Storage Temperature
TL Channel Temperature
(Note1)
(Note 2)
(Note 1)
(Note 3)
Value
500
5
2.9
18
±30
300
7.5
4.5
61
0.49
-55~150
300
Thermal Characteristics
Symbol
Parameter
RQJC
RQCS
RQJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Min
-
-
-
Value
Typ
-
0.5
-
Max
2.05
-
62.5
Rev.A Oct.2010
Copyright@Winsemi Microelec.tronics Co., Ltd., All right reserved.
DPAK
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/
Units
/W
/W
/W

1 page




WFD5N50 pdf
WFD5N50
Fig.10 Gate Test Circuit & Waveform
Fig.11 Resistive Switching Test Circuit & Waveform
Fig.12 Unclamped Inductive Switching Test Circuit & Waveform
Steady, keep. you advance
5/7

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