WFU5N60 PDF даташит
Спецификация WFU5N60 изготовлена «Wisdom technologies» и имеет функцию, называемую «HIGH VOLTAGE N-Channel MOSFET». |
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Детали детали
Номер произв | WFU5N60 |
Описание | HIGH VOLTAGE N-Channel MOSFET |
Производители | Wisdom technologies |
логотип |
6 Pages
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HIGH VOLTAGE N-Channel MOSFET
WFU5N60/WFD5N60
600V N-Channel MOSFET
Features
□ Low Intrinsic Capacitances
□ Excellent Switching Characteristics
□ Extended Safe Operating Area
□ Unrivalled Gate Charge : 15 nC (Typ.)
□ BVDSS=600V,ID=4.5A
□ Lower RDS(on) : 2.5Ω (Max) @VG=10V
□ 100% Avalanche Tested
TO‐252
TO‐251
G‐Gate,D‐Drain,S‐Sourse
Absolute Maximum Ratings Tc=25℃ unless other wise noted
Symbol
VDSS
ID
VGS
EAS
IAR
PD
TJ,TSTG
TL
Parameter
Drain-Sourse Voltage
Drain Current
-continuous (Tc=25℃)
-continuous (Tc=100℃)
Gate-Sourse Voltage
Single Plused Avanche Energy
(Note1)
Avalanche Current
(Note2)
Power Dissipation (Tc=25℃)
Operating and Storage Temperature Range
Maximum lead temperature for soldering
purpose,1/8” from case for 5 seconds
WFU/D5N60
600
4.5
1.8
±30
240
4
44
-55 ~ +150
300
Units
V
A
A
V
mJ
A
W
℃
℃
Thermal Characteristics
Symbol
Parameter
Typ.
RθJC Thermal Resistance,Junction to Case
--
RθCA
Thermal Resistance,Junction to Ambient*
--
RθJA Thermal Resistance,Junction to Ambient
--
*When mounted on the minimum pad size recommended (PCB mounted)
Max
2.56
50
110
Units
℃/W
℃/W
℃/W
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HIGH VOLTAGE N-Channel MOSFET
Electrical Characteristics Tc=25℃ unless other wise noted
Symbol
Parameter
Test Condition Min. Typ.
Off Characteristics
BVDSS
△BVDSS/
△TJ
IDSS
IGSSF
IGSSR
Drain-Sourse Breakdown Voltage
Breakdown Voltage Temperature
Conficient
Zero Gate Voltage Drain Current
Gate-body leakage Current,
Forward
Gate-body leakage Current,
Reverse
ID=250μA,VGS=0
ID=250 μ A,Reference
to 25℃
Vds=500V, Vgs=0V
Vds=480V, Tc=125℃
Vgs=+30V, Vds=0V
Vgs=-30V, Vds=0V
600
--
--
--
--
--
0.6
--
--
--
On Characteristics
VGS(th)
RDS(on)
Date Threshold Voltage
Static Drain-Sourse
On-Resistance
Id=250uA,Vds=Vgs
Id=2.25A,Vgs=10V
2 --
-- --
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=25V,VGS=0,
f=1.0MHz
--
--
--
515
55
6.5
Switching Characteristics
Td(on)
Tr
Td(off)
Tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Sourse Charge
Gate-Drain Charge
VDD=300V,ID=4.5A,
RG=25Ω (Note 3,4)
VDS=480,VGS=10V,
ID=4.5A (Note 3,4)
--
--
--
--
--
--
150
42
38
46
15
2.
6.6
Drain-Sourse Diode Characteristics and Maximum Ratings
IS
ISM
VSD
trr
Qrr
*Notes
Maximun Continuous Drain-Sourse Diode Forward Current --
Maximun Plused Drain-Sourse DiodeForwad Current
--
Drain-Sourse Diode Forward Id=4.5A
Voltage
--
Reverse Recovery Time
Reverse Recovery Charge
IS=4.5A,VGS =0V
diF/dt=100A/μs (Note3)
--
--
1, L=27.5mH, IAS=4A, VDD=50V, RG=25Ω, Starting TJ =25°C
2, Repetitive Rating : Pulse width limited by maximum junction temperature
3, Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%
4, Essentially Independent of Operating Temperature
--
--
--
300
2.2
Max Units
-- V
-- V/℃
1 μA
10 μA
100 nA
-100
nA
4V
2.5 Ω
670 pF
72 pF
8.5 pF
30 nS
90 nS
85 nS
100 nS
19 nC
-- nC
-- nC
4.5 A
18 A
1.25 V
-- nS
-- μC
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Typical Characteristics
HIGH VOLTAGE N-Channel MOSFET
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