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PDF WFF12N65L Data sheet ( Hoja de datos )
| Número de pieza | WFF12N65L | |
| Descripción | Silicon N-Channel MOSFET | |
| Fabricantes | Winsemi | |
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WFF12N65L Product Description
Silicon N-Channel MOSFET
Features
� 12A,650V,RDS(on)(Max0.8Ω)@VGS=10V
� Ultra-low Gate charge(Typical 40nC)
� Fast Switching Capability
� 100%Avalanche Tested
� Enhanced EMI capability
� Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is N channel enhanced high voltage power MOS field effect
transistor fabrication by F-CellTM planar high pressure VDMOS process technology. this
product have lower resistance,Superior switching performance and high EAS capability.
The product can be widely used in AC-DC switching power supply, DC-DC power
converter, and high H bridge PWM motor drive.
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
IDM
VGS
EAS
dv/dt
PD
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Continuous Drain Current(@Tc=100℃)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@Tc=25℃)
Derating Factor above 25℃
TJ,Tstg
Junction and Storage Temperature
(Note1)
(Note2)
(Note3)
Value
650
12
7.5
48
±30
550
5
42
0.34
-55~150
Units
V
A
A
A
V
mJ
V/ns
W
W/℃
℃
Thermal Characteristics
Symbol
Parameter
RQJC
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Junction-to -Ambient
Value
Units
Min Typ Max
- - 3.0 ℃/W
- - 62.5 ℃/W
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
WT-F118-Rev.A0 Nov 2015(F0)
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
1115
1 page  
WFF12N65L Product Description
Silicon N-Channel MOSFET
Same type
50K Ω as DUT
12V 200nF
300nF
VG S
10V
Qg
VG S VD S Qg s Qg d
DUT
3m A
Charge
Fig.12 Gate Test circuit & Waveform
10V
VD S
VG S
RG
RL
VD D
DUT
VD S 9 0 %
VG S 1 0 %
td(on) tr
to n
td ( o ff)
tf
to ff
Fig.13 Resistive Switching Test Circuit & Waveform
VD S
ID
RG
L
EA S =
1
2
L IA S 2
B VDSS
B V D S S- VD D
B VDSS
IA S
VD D ID( t)
10V
tp
DUT
VD D VD S(t)
tp T i m e
Fig.14 Unclamped Inductive Switching Test Circuit & Waveform
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
www.winsemi.com Tel : +86-755-8250 6288 Fax : +86-755-8250 6299
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
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