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WFF18N50L PDF даташит

Спецификация WFF18N50L изготовлена ​​​​«Winsemi» и имеет функцию, называемую «Silicon N-Channel MOSFET».

Детали детали

Номер произв WFF18N50L
Описание Silicon N-Channel MOSFET
Производители Winsemi
логотип Winsemi логотип 

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WFF18N50L Даташит, Описание, Даташиты
WFF18N50L Product Description
Silicon N-Channel MOSFET
Features
18A,500V,RDS(on)(Max0.31)@VGS=10V
Ultra-low Gate charge(Typical 37.9nC)
Fast Switching Capability
100%Avalanche Tested
Maximum Junction Temperature Range(150)
General Description
This Power MOSFET is produced using Winsemi's advanced
planar stripe,VDMOS technology.this latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics .This devices is specially well
suited for half bridge and full bridge resonant topology line a
electronic lamp ballast, high efficiency switched mode power
supplies, active power factor correction.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
IDM
VGS
EAS
PD
TJ,Tstg
Drain Source Voltage
Continuous Drain Current(@Tc=25)
Continuous Drain Current(@Tc=100)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Total Power Dissipation(@Tc=25)
Derating Factor above 25
Junction and Storage Temperature
(Note1)
(Note2)
D
G
S
Value
500
18
11.4
72
±30
1502
54
0.43
-55~150
Units
V
A
A
A
V
mJ
W
W/
Thermal Characteristics
Symbol
Parameter
RQJC
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Junction-to -Ambient
Value
Units
Min Typ Max
- - 2.31 /W
- - 120 /W
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
WINSEMI MICROELECTRONICS
WT-F088-Rev.A0 Oct. 2014
WINSEMI MICROELECTRONICS
1014









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WFF18N50L Даташит, Описание, Даташиты
WFF18N50L Product Description
Silicon N-Channel MOSFET
Electrical Characteristics(Tc=25)
Characteristics
Gate leakage current
Gate-source breakdown voltage
Drain Cut -off current
Drain -source breakdown voltage
Gate threshold voltage
Drain -source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Turn-on Rise time
Switching time
Turn-on delay time
Turn-off Fall time
Turn-off delay time
Total gate charge(gate-source
plus gate-drain)
Gate-source charge
Gate-drain("miller") Charge
Symbol
Test Condition
IGSS
V(BR)GSS
VGS=±30V,VDS=0V
IG=±10 µA,VDS=0V
IDSS
V(BR)DSS
VGS(th)
RDS(ON)
Ciss
Crss
Coss
tr
Td(on)
tf
Td(off)
VDS=500V,VGS=0V
ID=250 µA,VGS=0V
VDS=VGS,ID=250 µA
VGS=10V,ID=9.0A
VDS=25V,
VGS=0V,
f=1MHz
VDD=325V,
ID=18A
RG=25Ω
(Note3,4)
Qg
Qgs
Qgd
VDD=520V,
VGS=10V,
ID=18A
(Note3,4)
Min
-
±30
-
500
2
-
-
-
-
-
-
-
-
Type Max
- ±100
--
- 1.0
--
-4
0.26 0.31
2320
-
7.15 -
282 -
131 -
60 -
75 -
115 -
Unit
nA
V
µA
V
V
pF
ns
- 37.9 -
- 12.5 -
- 12.1 -
nC
Source-Drain Ratings and Characteristics(Ta=25)
Characteristics
Symbol Test Condition
Continuous drain reverse current
IDR
-
Pulse drain reverse current
IDRP
-
Forward voltage(diode)
VDSF
IDR=18A,VGS=0V
Reverse recovery time
Reverse recovery charge
trr IDR=18A,VGS=0V,
Qrr dIDR /dt =100 A /µs
Min Type Max Unit
- - 18 A
- - 72 A
- - 1.3 V
- 582.9 -
ns
- 7.1 - µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=30mH IAS=8.6A,VDD=140V,RG=25Ω,Starting TJ=25
3.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
4. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
www.winsemi.com Tel : +86-755-8250 6288 Fax : +86-755-8250 6299
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
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WFF18N50L Даташит, Описание, Даташиты
WFF18N50L Product Description
Silicon N-Channel MOSFET
100
VGS
Top 4.5V
5.0V
5.5V
6.0V
7.0V
10
8.0V
10V
15V
1
0.1
0.1
0.29
N otes :
1.250µs pulse test
2.Tc= 25°C
1 10
VDS [V ]
100
Fig.1 On Region Characteristics
100
10
2 5 °C
1 5 0 °C
1
-5 5 °C
Not es :
1. 250µs pulse t est
2. V DS = 50V
0.1
0 1 2 3 4 5 6 7 8 9 10
VGS[V ]
Fig.2 Transfer Characteristics
100
0.28
0.27
0.26
V G S= 1 0 V
V G S= 2 0 V
10
Notes:
1.250µs pulse test
2.VGS =0V
1
1 5 0 °C
2 5 °C
-5 5 °C
Note:TJ =25°C
0.25
0 4 8 12 16 20
ID[A]
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2
VSD[V ]
Fig.3 On-Resistance Variation vs Drain
Current and Gate Voltage
Fig.4 Body Diode Forward Voltage Variation vs.
Source Current and Temperature
5000
4500
4000
Coss
3500
3000
2500
Ciss
2000
1500
1000
Crss
500
0
0.1
Ciss=Cgs+Cgd(Cds=shorted)
Coss=Cds+Cgd
Crss=Cgd
No t e :
1.VGS =0V
2 . f = 1 M Hz
1
VDS [V ]
10
100
12
10
8
6
4
2
00
400V
250V
100V
No t e :I D= 1 8 A
8 16 24 32 40
Qg(nC)
Fig.5 Capacitance Characteristics
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
www.winsemi.com Tel : +86-755-8250 6288 Fax : +86-755-8250 6299
Fig.6 Gate Charge Characteristics
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
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