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WFF18N50 PDF даташит

Спецификация WFF18N50 изготовлена ​​​​«Winsemi» и имеет функцию, называемую «Silicon N-Channel MOSFET».

Детали детали

Номер произв WFF18N50
Описание Silicon N-Channel MOSFET
Производители Winsemi
логотип Winsemi логотип 

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WFF18N50 Даташит, Описание, Даташиты
WFF18N50 Product Description
Silicon N-Channel MOSFET
Features
18A,500V,RDS(on)(Max0.27Ω)@VGS=10V
Ultra-low Gate charge(Typical 42nC)
Fast Switching Capability
100%Avalanche Tested
Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi's advancedplanar
stripe,VDMOS technology.this latest technology has beenespecially
designed to minimize on-state resistance, have a high rugged avalanche
characteristics .This devices is specially wellsuited for AC-DC switching
power supplies, DC-DC powerConverters high voltage H-bridge motor
drive PWM
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
Drain Source Voltage
Continuous Drain Current(@Tc=25)
Continuous Drain Current(@Tc=100)
IDM Drain Current Pulsed
VGS Gate to Source Voltage
EAS Single Pulsed Avalanche Energy
IAR Avalanche Current
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25)
PD
Derating Factor above 25
TJ,Tstg
Junction and Storage Temperature
TL Channel Temperature
(Note1)
(Note2)
note 1
(Note1)
(Note3)
Value
500
18*
12.7*
71*
±30
900
18
22.7
4.5
39
0.31
-55~150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ ns
W
W/
Thermal Characteristics
Symbol
Parameter
RQJC
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Junction-to -Ambient
Value
Units
Min Typ Max
- - 3.2 /W
- - 62.5 /W
WINSEM I M ICROELECTRONICS
WINSEM I M ICROELECTRONICS
WINSEM I M ICROELECTRONICS
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
WINSEM I M ICROELECTRONICS
WT-F026-Rev.A1 Jan.2014
WINSEM I M ICROELECTRONICS
1110









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WFF18N50 Даташит, Описание, Даташиты
WFF18N50 Product Description
Silicon N-Channel MOSFET
Electrical Characteristics(Tc=25)
Characteristics
Symbol
Gate leakage current
IGSS
Gate-source breakdown voltage
V(BR)GSS
Drain cut -off current
IDSS
Drain -source breakdown voltage
Breakdown voltage Temperature
coefficient
Gate threshold voltage
Drain -source ON resistance
Forward Transconductance
Input capacitance
Reverse transfer capacitance
Output capacitance
Turn-On rise time
Switching time
Turn-On delay time
Turn-Off Fall time
Turn-Off delay time
Total gate charge(gate-source
plus gate-drain)
Gate-source charge
Gate-drain("miller") Charge
V(BR)DSS
BVDSS/TJ
VGS(th)
RDS(ON)
gfs
Ciss
Crss
Coss
tr
td(on)
tf
td(off)
Qg
Qgs
Qgd
Test Condition
VGS=±30V,VDS=0V
IG=±10 µA,VDS=0V
VDS=500V, VGS=0V, TC=25
VDS=400V, TC=125
ID=250μA, VGS=0V
ID=250µA,Referenced to 25
VDS = VGS , ID=250μA
VGS=10V,ID=9A
VDS=40V,ID=9A
VDS=25V,
VGS=0V,
f=1MHz
VDD=250V,
ID=18A
RG=25Ω
(Note4,5)
VDD=400V,
VGS=10V,
ID=18A
(Note4,5)
Min
-
±30
-
-
500
-
3
-
-
-
-
-
-
-
-
-
-
-
-
Type
-
-
-
-
-
0.5
-
0.235
24
2300
25
355
165
52
85
100
42
12
22
Max
±100
-
1
10
-
Unit
nA
V
µA
V
- V/
5
0.27
-
2918
40
453
350
128
200
200
V
S
pF
ns
60
nC
-
-
Source-Drain Ratings and Characteristics(Ta=25)
Characteristics
Symbol
Test Condition
Continuous drain reverse current
IDR
-
Pulse drain reverse current
IDRP
-
Forward voltage(diode)
VDSF
IDR=18A,VGS=0V
Reverse recovery time
Reverse recovery charge
trr IDR=18A,VGS=0V,
Qrr dIDR / dt =100 A / µs
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=5.2mH IAS=18A,VDD=50V,RG=25Ω,Starting TJ=25
3.ISD≤18A,di/dt≤200A/us,VDD<BVDSS,Starting TJ=25
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
Min Type Max Unit
- - 18 A
- - 72 A
- - 1.4 V
- 460 - ns
- 5.4 - µC
WINSEM I M ICROELECTRONICS
WINSEM I M ICROELECTRONICS
WINSEM I M ICROELECTRONICS
www.winsemi.com Tel : +86-755-8250 6288 Fax : +86-755-8250 6299
WINSEM I M ICROELECTRONICS
WINSEM I M ICROELECTRONICS
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WFF18N50 Даташит, Описание, Даташиты
WFF18N50 Product Description
Silicon N-Channel MOSFET
102
To p 15.0V
10.0V
9.0V
8.0V
7.0V
6.5V
6.0V
Bottom 5.5V
101
100
100
Note:
1.250µs pulse best
2 . Tc=2 5 °C
101
VD S Drain-Source Voltage[V]
Fig.1 On Region Characteristics
0 .5
0 .4
0 . 3 VG S =10V
0 .2
VG S =20V
0 .1
Note:TJ =25°C
0 .0
0 2 4 6 8 10 12 14 16 18 20 22
ID[A]
Fig.3 On-Resistance Variation vs Drain
Current and Gate Voltage
7000
6000
Ciss=Cgs+Cgd(Cds=shorted)
Coss=Cds+Cgd
Crss=Cgd
5000
4000
3000
2000
1000
0
1 0 -1
Coss
C is s
* N ot es :
1.VG S =0V
2. f = 1M H z
Crss
100 101
VD S ,Drain-Source Voltage[V]
Fig.5 Capacitance Characteristics
102
125°C
101
-55°C
100
2
25°C
Note:
1.VD S =40V
2.250µs Pulse Test
4 6 8 10
VG S Gate-Source Voltage[V]
12
Fig.2 Transfer Characteristics
101
150°C
25°C
Notes:
1.250µs pulse test
2.VG S =0V
100
0 .4 0 .5 0 .6 0 .7 0 .8 0 .9 1 .0 1 .1 1 .2 1 .3 1 .4
VSD Source-Drain voltage[V]
Fig.4 Body Diode Forward Voltage
Variation with Source Currentand
Temperature
12
VD S =400V
1 0 VD S =250V
VD S =100V
8
6
4
2
0
0 5 10 15 20 25 30 35 40 45 50
Qg Toltal Gate Charge[nC]
Fig.6 Gate Charge Characteristics
WINSEM I M ICROELECTRONICS
WINSEM I M ICROELECTRONICS
WINSEM I M ICROELECTRONICS
www.winsemi.com Tel : +86-755-8250 6288 Fax : +86-755-8250 6299
WINSEM I M ICROELECTRONICS
WINSEM I M ICROELECTRONICS
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Номер в каталогеОписаниеПроизводители
WFF18N50Silicon N-Channel MOSFETWinsemi
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WFF18N50LSilicon N-Channel MOSFETWinsemi
Winsemi

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