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WFF2N65L PDF даташит

Спецификация WFF2N65L изготовлена ​​​​«Winsemi» и имеет функцию, называемую «Silicon N-Channel MOSFET».

Детали детали

Номер произв WFF2N65L
Описание Silicon N-Channel MOSFET
Производители Winsemi
логотип Winsemi логотип 

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WFF2N65L Даташит, Описание, Даташиты
WFF2N65L Product Description
Silicon N-Channel MOSFET
Features
2A,650V,RDS(on)(Max 5.0Ω)@VGS=10V
Ultra-low Gate Charge(Typical 8nC)
Fast Switching Capability
100%Avalanche Tested
Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi's advanced planar
stripe,VDMOS technology. This latest technology has been especially
designed to minimize on -state resistance,have a high rugged avalanche
characteristics. This devices is specially well suited for high efficiency
switch mode power supply .
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
Drain Source Voltage
Continuous Drain Current(@Tc=25)
Continuous Drain Current(@Tc=100)
IDM Drain Current Pulsed
VGS Gate to Source Voltage
EAS Single Pulsed Avalanche Energy
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25)
PD
Derating Factor above 25
TJ,Tstg
Junction and Storage Temperature
TL Channel Temperature
(Note1)
(Note2)
(Note1)
(Note3)
Value
650
2.0
1.3
6
±30
210
4.2
4.6
22
0.18
-55~150
300
Units
V
A
A
A
V
mJ
mJ
V/ ns
W
W/
Thermal Characteristics
Symbol
Parameter
RQJC
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Junction-to -Ambient
Value
Units
Min Typ Max
- - 5.5 /W
- - 62.5 /W
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
WINSEMI MICROELECTRONICS
WT-F110-Rev.A0 Nov.2015
WINSEMI MICROELECTRONICS
1115









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WFF2N65L Даташит, Описание, Даташиты
WFF2N65L Product Description
Silicon N-Channel MOSFET
Electrical Characteristics(Tc=25)
Characteristics
Symbol
Gate leakage current
IGSS
Gate-source breakdown voltage
V(BR)GSS
Drain cut -off current
IDSS
Drain -source breakdown voltage
Gate threshold voltage
Drain -source ON resistance
Forward Transconductance
Input capacitance
Reverse transfer capacitance
Output capacitance
Turn-on Rise time
Switching time
Turn-on delay time
Turn-off Fall time
Turn-off delay time
Total gate charge(gate-source
plus gate-drain)
Gate-source charge
Gate-drain("miller") Charge
V(BR)DSS
VGS(th)
RDS(ON)
gfs
Ciss
Crss
Coss
tr
Td(on)
tf
Td(off)
Qg
Qgs
Qgd
Test Condition
VGS=±30V,VDS=0V
IG=±10 µA,VDS=0V
VDS=650V,VGS=0V
VDS=520V,Tc=125
ID=250 µA,VGS=0V
VDS = VGSB,ID=250 µA
VGS=10V,ID=1A
VDS=40V,ID=1A
VDS=25V,
VGS=0V,
f=1MHz
VDD=350V,
ID=2A
RG=25Ω
(Note4,5)
VDD=520V,
VGS=10V,
ID=2A
(Note4,5)
Min
-
±30
-
-
650
2
-
-
-
-
-
-
-
-
-
-
-
-
Type
-
-
-
-
-
4.0
2.45
420
3.8
14
30
9
32
27
Max
±100
-
10
100
-
4
5.0
-
482
4.0
19
48
24
50
47
Unit
nA
V
µA
µA
V
V
S
pF
ns
8 10
nC
1.3 -
4.3 -
Source-Drain Ratings and Characteristics(Ta=25)
Characteristics
Symbol Test Condition
Continuous drain reverse current IDR -
Pulse drain reverse current
IDRP
-
Forward voltage(diode)
VDSF
IDR=2.0A,VGS=0V
Reverse recovery time
trr IDR=2.A,VGS=0V,
Reverse recovery charge
Qrr dIDR / dt =100 A / µs
Min Type Max Unit
- - 2.0 A
- - 6.0 A
- - 1.4 V
- 220 - ns
- 1.0 - µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=56mH IAS=2A,VDD=50V,RG=25Ω ,Starting TJ=25
3.ISD≤2A,di/dt≤200A/us,VDD<BVDSS,Starting TJ=25
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
www.winsemi.com Tel : +86-755-8250 6288 Fax : +86-755-8250 6299
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
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WFF2N65L Даташит, Описание, Даташиты
WFF2N65L Product Description
Silicon N-Channel MOSFET
Top
VG S
15V
10V
8V
7V
6.5V
6V
5.5V
B ottom 5 V
1
10
1 5 0C
1
0 .1
1
N otes:
1
2
.
.
2Tc5=02u5spCu
l
s
e
test
10
VD S [V]
Fig.1 On-Region Characteristics
7 .5
7 .0
6 .5
VG S =10V
6 .0
5 .5
VG S =20V
5 .0
4 . 5 Note:TJ=25 C
4 .0
0 .5 1 .0 1 .5 2 .0 2 .5
ID[A]
3 .0 3 .5
Fig.3 On Resistance variation vs Drain
Current and Gate Voltage
400
360
320
280
240
200
160
120
80
40
0
1 0 -1
Ciss=Cgs+Cgd(Cds=shorted)
C oss= C ds+ C gd
C rss= C gd
Cis s
Co s s
N ot es :
1. V DS = 0V
Crs s 2. f =1MHz
1 00
VD S [V]
1 01
Fig.5 Capacitance Characteristics
0 .1
2
25 C
Notes:
1.250us pulse test
2.VD S =40V
4 6 8 10
VG S [V]
Fig.2 Transfer characteristics
1 25C
1 5 0C
Notes:
1.250us pulse test
2.V G S =0V
0 .1
0 .4 0 .5 0 .6 0 .7 0 .8 0 .9 1 .0 1 .1 1 .2 1 .3
VS D [V]
Fig.4 Body Diode Forward Voltage
Variation With Source Current
And temperature
12
VD S =480V
10
VD S =300V
8 VD S =120V
6
4
2
0
012345
Qg Toltal Gate Charge[nC]
Fig.6 Gate Charge Characteristics
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
www.winsemi.com Tel : +86-755-8250 6288 Fax : +86-755-8250 6299
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
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