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WFF4N65S PDF даташит

Спецификация WFF4N65S изготовлена ​​​​«Winsemi» и имеет функцию, называемую «650V Super-Junction Power MOSFET».

Детали детали

Номер произв WFF4N65S
Описание 650V Super-Junction Power MOSFET
Производители Winsemi
логотип Winsemi логотип 

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WFF4N65S Даташит, Описание, Даташиты
WFF4N65S Product Description
650V Super-Junction Power MOSFET
Features
Ultra low Rdson
Ultra low gate charge (typ. Qg =13nC)
100% UIS tested
RoHS compliant
General Description
Power MOSFET is fabricated using advanced super junction
technology. The resulting device has extremely low on resistance,
making it especially suitable for applications which require superior
power density and outstanding efficiency.
Absolute Maximum Ratings
Symbol
VDSS
Drain Source Voltage
Continuous Drain Current (Tc=25)
ID (Tc=100)
Parameter
IDM Drain Current Pulsed 1)
VGS Gate to Source Voltage
EAS Single Pulse Avalanche Energy 2)
IAR Single Pulse Avalanche Current 1)
EAR Repetitive Avalanche Energy 1)
Total Power Dissipation(@Tc=25)
PD -Derate above 25
TJ Junction Temperature
Tstg Storage Temperature
Is Continuous diode forward current
Is,pulse
Diode pulse current
Notes:
1.Repetitive Rating:Pulse width limited by maximum Junction Temperature
2.IAS=2A,VDD=60V,RG=25Ω,Starting TJ=25
Thermal Characteristics
Symbol
Parameter
RQJC Thermal Resistance , Junction -to -Case
RQJA Thermal Resistance , Junction-to -Ambient
D
G
S
Value
650
4
2.5
12
±30
130
4
0.4
29
0.23
150
-55~150
4
12
Units
V
A
A
V
mJ
A
mJ
W
W/
A
A
Value
Units
Min Typ Max
- - 4.3 /W
- - 80 /W
WIN SEM I M ICROELECTRON ICS
WIN SEM I M ICROELECTRON ICS
WIN SEM I M ICROELECTRON ICS
Copyr ight@Winsemi Microelectronics Co., Ltd., All right reserved.
WIN SEM I M ICROELECTRON ICS
WT-F051-Rev.A1 Nov.2013
WIN SEM I M ICROELECTRON ICS
0309









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WFF4N65S Даташит, Описание, Даташиты
WFF4N65S Product Description
650V Super-Junction Power MOSFET
Electrical Characteristics(Tc=25unless otherwise noted)
Characteristics
Symbol
Test Condition
Gate leakage current
Drain cut -off current
I GSS VGS=±30V,VDS=0V
VDS=650,VGS=0V
I DSS Tj=25
Tj=125
Drain -source breakdown voltage
Gate threshold voltage
Drain -source ON resistance
V(BR)DSS
VGS(th)
R DS(ON)
I D=250µA ,VGS=0V
VDS=VGS,I D=250uA
VGS=10V,ID= 2A
Tj=25
Tj=150
Gate resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Turn-on delay time
RG
C iss
C rss
C oss
td(on)
f=1MHz,open drain
VDS=25V,
VGS=0V,
f=1MHz
Rise time
Turn-off delay time
tr
td(off)
VDD = 300V, ID = 2A
RG = 12Ω, VGS=10V
Fall time
tf
Gate to source charge
Qgs
Gate to drain charge
Gate charge total
Q gd
Qg
VDD=480V,ID=2A,
VG S=0 to 10 V
Gate plateau voltage
Vpla teau
Source-Drain Ratings and Characteristics(Ta=25)
Characteristics
Symbol
Test Condition
Diode forward voltage
VSD VGS=0 V, I F=2A
Reverse recovery time
trr VR=50 V, I F=4A,
Reverse recovery charge
Qrr dIF/dt=100 A/μs
Peak reverse recovery current
I rr m
Min Type Max Unit
-
-
±100
nA
- - 1 µA
- 10 -
650 -
-V
2.5 3.5 4.5 V
-
0.83 0.93
- 1.9 -
- 0.4 - Ω
- 450
-5
pF
- 300
- 13 -
- 12 -
ns
- 31 -
-9 -
-3 -
- 6 - nC
- 13 -
- 5. 8 - V
Min Type Max Unit
- - 1.2 V
- 220 - ns
- 1.6 - µc
- 12 - A
WIN SEM I M ICROELECTRON ICS
WIN SEM I M ICROELECTRON ICS
WIN SEM I M ICROELECTRON ICS
www.winsemi.com Tel : 0755-82506288 Fax : 0755-82506299
WIN SEM I M ICROELECTRON ICS
WIN SEM I M ICROELECTRON ICS
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WFF4N65S Даташит, Описание, Даташиты
WFF4N65S Product Description
650V Super-Junction Power MOSFET
8
7 CTco=m25moCn Sourc e
Pulse Test
6
VG S =10V
VG S =7V
5
VG S =6.5V
4
3
VG S =6V
2
VG S =5.5V
1
0
0 4 6 12
Drain-source voltage V DS (V)
Fig.1 On-Region characteristics
16
10
9
C om mon Sourc e
Tc=25 C
VD S =20V
8 Pulse Test
7
6
5
4
3
2
1
0
246
Gate-source voltage V GS(V)
Fig.2 Transfer characteristics
8
1 .5
1 .4
1 .3
1 .2
1 .1
1
0 .9
0 .8
0 .7
0 .6
0
5 10
15
Drain Current I D (A)
20
Fig.3 On-Resistance Variation vs Drain
Current
1 .2
1 .1
1
0 .9
0 .8
VG S =0V
ID S =0.25mA
Puls e tes t
0 .7
-60 -40 -20
0 20 40 60 80 100 120 140 160
Junction temperatureT J ( C)
Fig.5 Breakdown Voltage vs.Temperature
1 .3
1 .2
1 .1
1
0 .9
0 .8
0 .7
0 .6
0 .5
-6 0 -4 0
ID S =0.25mA
Pulse test
-2 0 0 2 0 4 0 6 0 8 0 1 0 0 1 2 0 1 4 0
Junction temperatureT J( C)
160
Fig.4 Threshold Voltage vs. Temperature
2 .5
2
1 .5
1
0 .5 V =10V
I =2A
Pu lse te st
0
-6 0 -4 0 -2 0 0 2 0 4 0 6 0 8 0 1 0 0 1 2 0 1 4 0 1 6 0
Junction temperatureT J ( C)
Fig.6 On-Resistance vs.Temperature
WIN SEM I M ICROELECTRON ICS
WIN SEM I M ICROELECTRON ICS
WIN SEM I M ICROELECTRON ICS
www.winsemi.com Tel : 0755-82506288 Fax : 0755-82506299
WIN SEM I M ICROELECTRON ICS
WIN SEM I M ICROELECTRON ICS
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