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WFF5N65L PDF даташит

Спецификация WFF5N65L изготовлена ​​​​«Winsemi» и имеет функцию, называемую «Silicon N-Channel MOSFET».

Детали детали

Номер произв WFF5N65L
Описание Silicon N-Channel MOSFET
Производители Winsemi
логотип Winsemi логотип 

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WFF5N65L Даташит, Описание, Даташиты
WFF5N65L Product Description
Silicon N-Channel MOSFET
Features
4.5A,650V,RDS(on)(Max2.8Ω)@VGS=10V
Ultra-low Gate charge(Typical 14.5nC)
Fast Switching Capability
100%Avalanche Tested
Enhanced EMI capability
Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is N channel enhanced high voltage power MOS field effect
transistor fabrication by F-CellTM planar high pressure VDMOS process technology. this
product have lower resistance,Superior switching performance and high EAS capability.
The product can be widely used in AC-DC switching power supply, DC-DC power
converter, and high H bridge PWM motor drive.
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
Drain Source Voltage
Continuous Drain Current(@Tc=25)
Continuous Drain Current(@Tc=100)
IDM Drain Current Pulsed
VGS Gate to Source Voltage
EAS Single Pulsed Avalanche Energy
EAR Repetitive Avalanche Energy
Total Power Dissipation(@Tc=25)
PD
Derating Factor above 25
TJ,Tstg
Junction and Storage Temperature
Thermal Characteristics
Symbol
Parameter
RQJC
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Junction-to -Ambient
(Note1)
(Note2)
(Note1)
Value
650
4.5*
2.5*
16
±30
200
14
30
0.24
-55~150
Units
V
A
A
A
V
mJ
mJ
W
W/
Value
Units
Min Typ Max
- - 4.17 /W
- - 62.5 /W
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
WT-F114-Rev.A0 Nov 2015(F0)
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
1115









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WFF5N65L Даташит, Описание, Даташиты
WFF5N65L Product Description
Silicon N-Channel MOSFET
Electrical Characteristics(Tc=25)
Characteristics
Gate leakage current
Gate-source breakdown voltage
Drain Cut -off current
Drain -source breakdown voltage
Gate threshold voltage
Drain -source ON resistance
Forward Transconductance
Input capacitance
Reverse transfer capacitance
Output capacitance
Turn-on Rise time
Switching time
Turn-on delay time
Turn-off Fall time
Turn-off delay time
Total gate charge(gate-source
plus gate-drain)
Gate-source charge
Gate-drain("miller") Charge
Symbol
IGSS
V(BR)GSS
IDSS
V(BR)DSS
VGS(th)
RDS(ON)
gfs
Ciss
Crss
Coss
tr
Td(on)
tf
Td(off)
Qg
Qgs
Qgd
Test Condition
VGS=±30V,VDS=0V
IG=±10 µA,VDS=0V
VDS=650V,VGS=0V
VDS=500V,Tc=125
ID=250 µA,VGS=0V
VDS=VGS,ID=250 µA
VGS=10V,ID=2.0A
VDS=15V,ID=2.0A
VDS=25V,
VGS=0V,
f=1MHz
VDD=325V,
ID=4A
RG=10Ω
(Note3,4)
VDD=520V,
VGS=10V,
ID=4A
(Note3,4)
Source-Drain Ratings and Characteristics(Ta=25)
Characteristics
Symbol Test Condition
Continuous drain reverse current
IDR
-
Pulse drain reverse current
IDRP
-
Forward voltage(diode)
VDSF
IDR=4A,VGS=0V
Reverse recovery time
Reverse recovery charge
Reverse recovery current
trr
IDR=4A,VGS=0V,
Qrr
dIDR /dt =100 A /µs
Irrm
Min
-
±30
-
-
650
2
-
-
-
-
-
-
-
-
-
Type
-
-
-
-
-
-
2.4
3.5
611
3.6
54
16
14
11
32
Max
±100
-
1.0
100
-
4
2.8
-
-
-
-
-
-
-
-
Unit
nA
V
µA
µA
V
V
S
pF
ns
- 14.5 -
- 3.0 -
- 6.5 -
nC
Min Type Max Unit
- - 4A
- - 16 A
- - 1.5 V
- 256 - ns
- 1.2 - µC
- 9.4 - A
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=10mH IAS=6.3A,VDD=500V,RG=25Ω,Starting TJ=25
3.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
4. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
www.winsemi.com Tel : +86-755-8250 6288 Fax : +86-755-8250 6299
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
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WFF5N65L Даташит, Описание, Даташиты
WFF5N65L Product Description
Silicon N-Channel MOSFET
8
Not es :
1.250µs pulse test
2. Tc =25° C
6
VG S =10V
VG S =7V
4 VG S =6V
9 .0
7 .5
6 .0
4 .5
25°C
VG S =5V
2
VG S =4V
0
0 5 10 15 20 25
VD S [V ]
Fig.1 Output Characteristics
4 .0
3 .5
3 .0
V GS=10V
2 .5
2 .0
0
Not e: Tc =25° C
123 4
ID[A]
Fig.3 Drain to Source ON Resistance vs
Drain Current
10000
1000
C is s = C gs + C gd(C ds = s hort ed)
C os s = C ds + C gd
Crss= Cgd
C is s
3 .0
1 .5
0
2
8
7
6
5
4
3
2
1
0
0
150°C
N otes:
1.250µs pulse test
2.VD S =50V
4 68
VG S [V ]
10
Fig.2 Transfer Characteristics
150°C
25°C
0 .2 0 . 4 0 . 6 0 . 8 1 . 0 1 . 2
VS D [V ]
Fig.4 Body Diode Transfer Characteristics
12
1 0 520V
325V
130V
8
100
10
1
0 .1
Not e:
1.VG S =0V
2. f =1MHz
1
VD S [V ]
10
C oss
C rss
100
6
4
2
0
03
69
Q g(nC)
Note: ID=4.0A
12 15
Fig.5 Capacitance vs Drain to source
Voltage
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
www.winsemi.com Tel : +86-755-8250 6288 Fax : +86-755-8250 6299
Fig.6 Gate Charge vs Gate to source
Voltage
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
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