NSR10F30QNXT5G PDF даташит
Спецификация NSR10F30QNXT5G изготовлена «ON Semiconductor» и имеет функцию, называемую «Schottky Diode Optimized for High Frequency Switching Power Supplies». |
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Детали детали
Номер произв | NSR10F30QNXT5G |
Описание | Schottky Diode Optimized for High Frequency Switching Power Supplies |
Производители | ON Semiconductor |
логотип |
6 Pages
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NSR10F30QNXT5G
Schottky Diode Optimized
for High Frequency
Switching Power Supplies
These Schottky barrier diodes are optimized for low forward
voltage drop and low leakage current and are offered in a Chip Scale
Package (CSP) to reduce board space. The low thermal resistance
enables designers to meet the challenging task of achieving higher
efficiency and meeting reduced space requirements.
Features
• Low Forward Voltage Drop − 420 mV @ 1.0 A
• Low Reverse Current − 20 mA @ 10 V VR
• 1.0 A of Continuous Forward Current
• ESD Rating − Human Body Model: Class 3B
ESD Rating − Machine Model: Class C
• High Switching Speed
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
• LCD and Keypad Backlighting
• Camera Photo Flash
• Buck and Boost dc−dc Converters
• Reverse Voltage and Current Protection
• Clamping & Protection
Markets
• Mobile Handsets
• MP3 Players
• Digital Camera and Camcorders
• Notebook PCs & PDAs
• GPS
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Reverse Voltage
Forward Current (DC)
Forward Surge Current (60 Hz @ 1 cycle)
ESD Rating:
Human Body Model
Machine Model
VR
IF
IFSM
ESD
30
1.0
18
>8
> 400
V
A
A
kV
V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
30 V SCHOTTKY
BARRIER DIODE
1
CATHODE
2
ANODE
2
1
DSN2
(0502)
CASE 152AD
MARKING
DIAGRAM
PIN 1
10F30
YYY
10F30 = Specific Device Code
YYY = Year Code
ORDERING INFORMATION
Device
Package Shipping†
NSR10F30QNXT5G DSN2 5000 / Tape &
(Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
March, 2013 − Rev. 0
1
Publication Order Number:
NSR10F30/D
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NSR10F30QNXT5G
THERMAL CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Power Dissipation @ TA = 25°C
RPqDJA
228
548
Thermal Resistance
Junction−to−Ambient (Note 2)
Total Power Dissipation @ TA = 25°C
RPqDJA
85
1.47
Storage Temperature Range
Tstg −40 to +125
Junction Temperature
TJ +150
1. Mounted onto a 4 in square FR−4 board 50 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
2. Mounted onto a 4 in square FR−4 board 1 in sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
Unit
°C/W
mW
°C/W
W
°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Reverse Leakage
(VR = 10 V)
(VR = 30 V)
IR
Forward Voltage
(IF = 0.5 A)
(IF = 1.0 A)
VF
Reverse Recovery (Special)
Switch from Forward Current to Reverse Voltage
Time taken from 1 ns Transition Time to Fully Stabilized
(IF = 1.5 A to VR = 28 V, 25°C)
(IF = 1.5 A to VR = 28 V, 85°C)
TRR
Min
Typ
0.400
0.450
21.98
21.38
Max
20
100
0.420
0.470
Unit
mA
V
ns
http://onsemi.com
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NSR10F30QNXT5G
TYPICAL CHARACTERISTICS
10
1 TJ = 125°C
0.1 TJ = 150°C
0.01
0.001
0
75°C
25°C
−25°C
0.1 0.2 0.3 0.4
VF, FORWARD VOLTAGE (V)
Figure 1. Forward Voltage
300
0.5
250
100,000
10,000
1,000
100
10
1
0.1
0.01
0.001
0.6 0
150°C
125°C
75°C
25°C
−25°C
5 10 15 20 25
VR, REVERSE VOLTAGE (V)
Figure 2. Typical Reverse Current
TA = 25°C
200
150
100
50
0
0 5 10 15 20 25 30
VR, REVERSE VOLTAGE (V)
Figure 3. Typical Capacitance
30
Figure 4. Typical Reverse Recovery
IF = 1.5 A to VR = 28 V
http://onsemi.com
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Номер в каталоге | Описание | Производители |
NSR10F30QNXT5G | Schottky Diode Optimized for High Frequency Switching Power Supplies | ON Semiconductor |
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