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NSR0240P2T5G PDF даташит

Спецификация NSR0240P2T5G изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Schottky Barrier Diode».

Детали детали

Номер произв NSR0240P2T5G
Описание Schottky Barrier Diode
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NSR0240P2T5G Даташит, Описание, Даташиты
NSR0240P2T5G
Schottky Barrier Diode
Schottky barrier diodes are optimized for very low forward voltage
drop and low leakage current and are used in a wide range of dc−dc
converter, clamping and protection applications in portable devices.
NSR0240P2 in a SOD−923 miniature package enables designers to
meet the challenging task of achieving higher efficiency and meeting
reduced space requirements.
Features
Very Low Forward Voltage Drop − 460 mV @ 100 mA
Low Reverse Current − 0.2 mA @ 25 V VR
200 mA of Continuous Forward Current
Power Dissipation of 240 mW with Minimum Trace
Very High Switching Speed
Low Capacitance − CT = 7 pF
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
This is a Pb−Free Device
Typical Applications
LCD and Keypad Backlighting
Camera Photo Flash
Buck and Boost dc−dc Converters
Reverse Voltage and Current Protection
Clamping & Protection
Markets
Mobile Handsets
MP3 Players
Digital Camera and Camcorders
Notebook PCs & PDAs
GPS
MAXIMUM RATINGS
Rating
Symbol Value Unit
Reverse Voltage
Forward Current (DC)
Non−Repetitive Peak Forward Surge Current
ESD Rating: Human Body Model
Machine Model
VR
IF
IFSM
ESD
40 V
200 mA
2.0 A
Class 1C
Class A
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
www.onsemi.com
40 V SCHOTTKY
BARRIER DIODE
1
CATHODE
2
ANODE
2
1
SOD−923
CASE 514AB
MARKING
DIAGRAM
MG
G
12
P = Specific Device Code
M = Month Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
NSR0240P2T5G SOD−923 8000 / Tape & Reel
(Pb−Free)
NSVR0240P2T5G SOD−923 8000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 3
1
Publication Order Number:
NSR0240P2/D









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NSR0240P2T5G Даташит, Описание, Даташиты
NSR0240P2T5G
THERMAL CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Power Dissipation @ TA = 25°C
RqJA
PD
520
240
Thermal Resistance
Junction−to−Ambient (Note 2)
Total Power Dissipation @ TA = 25°C
RqJA
PD
175
710
Junction and Storage Temperature Range
TJ, Tstg
−55 to +150
1. Mounted onto a 4 in square FR−4 board 10 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
2. Mounted onto a 4 in square FR−4 board 1 in sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
Unit
°C/W
mW
°C/W
mW
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Reverse Leakage
(VR = 25 V)
(VR = 40 V)
IR
Forward Voltage (IF = 10 mA)
(IF = 100 mA)
(IF = 200 mA)
VF
Total Capacitance
(VR = 1.0 V, f = 1 MHz)
CT
Min
Typ Max Unit
mA
0.2 0.55
0.8 5.0
0.34 0.365 V
0.46 0.50
0.54 0.60
7.0 pF
1000
100
125°C
10
1 150°C
0.1
0.01
0.001 85°C 25°C
−40°C
0 0.1 0.2 0.3 0.4 0.5
VF, FORWARD VOLTAGE (V)
Figure 1. Forward Voltage
1.0E−02
1.0E−03
150°C
1.0E−04
1.0E−05
1.0E−06
1.0E−07
125°C
85°C
75°C
25°C
1.0E−08
−40°C
1.0E−09
1.0E−10
0.6 0
5 10 15 20 25 30 35 40 45
VR, REVERSE VOLTAGE (V)
Figure 2. Leakage Current
14
12 TA = 25°C
10
8
6
4
2
0
0 5 10 15 20 25 30 35 40 45
VR, REVERSE VOLTAGE (V)
Figure 3. Total Capacitance
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NSR0240P2T5G Даташит, Описание, Даташиты
NSR0240P2T5G
PACKAGE DIMENSIONS
2X b
0.08 X Y
−X−
D
−Y−
E
12
TOP VIEW
A
SOD−923
CASE 514AB
ISSUE C
c HE
SIDE VIEW
2X L
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE
MINIMUM THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS.
MILLIMETERS
DIM MIN NOM MAX
A 0.34 0.37 0.40
b 0.15 0.20 0.25
c 0.07 0.12 0.17
D 0.75 0.80 0.85
E 0.55 0.60 0.65
HE 0.95 1.00 1.05
L 0.19 REF
L2 0.05 0.10 0.15
INCHES
MIN NOM MAX
0.013 0.015 0.016
0.006 0.008 0.010
0.003 0.005 0.007
0.030 0.031 0.033
0.022 0.024 0.026
0.037 0.039 0.041
0.007 REF
0.002 0.004 0.006
SOLDERING FOOTPRINT*
2X
0.36
1.20
2X
0.25
2X L2
BOTTOM VIEW
PACKAGE
OUTLINE
DIMENSIONS: MILLIMETERS
See Application Note AND8455/D for more mounting details
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
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Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
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Europe, Middle East and Africa Technical Support:
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Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
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NSR0240P2/D










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Номер в каталогеОписаниеПроизводители
NSR0240P2T5GSchottky Barrier DiodeON Semiconductor
ON Semiconductor
NSR0240P2T5GSchottky Barrier DiodeON Semiconductor
ON Semiconductor

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