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WFD20N06 PDF даташит

Спецификация WFD20N06 изготовлена ​​​​«Winsemi» и имеет функцию, называемую «Silicon N-Channel MOSFET».

Детали детали

Номер произв WFD20N06
Описание Silicon N-Channel MOSFET
Производители Winsemi
логотип Winsemi логотип 

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WFD20N06 Даташит, Описание, Даташиты
WFD20N06
Silicon N-Channel MOSFET
Features
■ 20A,60V, RDS(on)(Max 39mΩ)@VGS=10V
■ Ultra-low Gate Charge(Typical 6.1nC)
■ High Current Capability
■ 100%Avalanche Tested
■ Maximum Junction Temperature Range(150)
General Description
This Power MO S FET is produced using Win se m i ’s advanced
planar stripe, This latest technology has been especially designed
to minimize on-state resistance, have a high rugged avalanche
characteristics. This devices is specially well suited for high
efficiency switch mode power supply. electronic Lamp ballasts
based on half bridge and UPS.
Absolute Maximum Ratings
Symbol
Parameter
V DSS
Drain Source Voltage
Continuous Drain Current(@Tc=25)
ID
Continuous Drain Current(@Tc=100)
IDM Drain Current Pulsed tp=10us
VGS Gate to Source Voltage-Continuous
VGS Gate to Source Voltage-Non-Repetitive(tp<10us)
EAS Single Pulsed Avalanche Energy
Is Source Current (Body Diode)
PD Total Power Dissipation(@Tc=25)
TJ, Tstg
Junction and Storage Temperature
TL Channel Temperature(1/8” from case for 10s)
(Note 2)
Value
60
20
13
76
±20
±30
18
20
36
-55~150
260
Units
V
A
A
A
V
V
mJ
A
W
Thermal Characteristics
Symbol
Parameter
Value
Min Typ Max
RQJC Thermal Resistance, Junction-to-Case - 3.5
-
RQJA
Thermal Resistance, Junction-to-Ambient
-
45
-
Units
/W
/W
Rev.A Nov.2012
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.









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WFD20N06 Даташит, Описание, Даташиты
WFD20N06
Electrical Characteristics (Tc = 25)
Characteristics
Symbol
Test Condition
Gate leakage current
Gate−source breakdown voltage
IGSS
V(BR)GSS
VGS = ±20 V, VDS = 0 V
IG = 250μA, VDS = 0 V
Drain cut−off current
VDS=100V, VGS=0V, Tc = 25°C
IDSS
VDS=100V, VGS =0V,Tc= 125°C
Min
-
60
-
-
Drain−source breakdown voltage
Break Voltage Temperature
Coefficient
Gate threshold voltage
Drain−source ON resistance
Forward Transconductance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn−on time
Fall time
Turn−off time
Total gate charge (gate−source
plus gate−drain)
Gate−source charge
Gate−drain (“miller”) Charge
V(BR)DSS
ΔBVDSS/
ΔTJ
VGS(th)
RDS(ON)
gfs
C iss
C rss
C oss
tr
ton
tf
toff
Qg
Qgs
Qgd
ID = 250 μA, VGS = 0 V
ID=250μA,Referenced to25
VDS = VGS, ID =250 μA
VGS = 10 V, ID = 10A
VDS = 15 V, ID = 10A
VDS = 25 V,
VGS = 0 V,
f = 1 MHz
VDD =48
VDS = 10V
ID =20A
RG=2.5Ω
VDs =48V
VGS =10V
ID =20A
60
-
1.0
-
-
-
-
-
-
-
-
-
-
-
-
Type
-
-
-
Max
±100
-
1.0
- 100
--
60 -
1.8
26
8.0
675
47
68
12.6
6.5
2.4
18.2
3.0
39
-
7.6
2.2 -
4.3 -
Unit
nA
V
μA
μA
V
mV/
V
S
pF
ns
nC
Source−Drain Ratings and Characteristics (Ta = 25℃)
Characteristics
Symbol
Test Condition
Min
Continuous drain reverse current
IDR
--
Pulse drain reverse current
IDRP
-
-
Forward voltage (diode)
VDSF
IDR = 10A, VGS = 0 V
-
Reverse recovery time
trr
IDR = 1A, VGS = 0 V,
-
Reverse recovery charge
Qrr dIDR / dt = 100 A / μs
-
Type
-
-
0.87
17
12
Max
20
76
1.2
-
-
Unit
A
A
V
ns
μC
Note 1. Surface−mounted on FR4 board using 1 in sq pad size(Cu area = 1.127 in sq [2 oz] including traces.
2. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
This transistor is an electrostatic sensitive device, Please handle with caution
Steady, keep you advance
2/6









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WFD20N06 Даташит, Описание, Даташиты
TYPICAL PERFORMANCE CURVES
WFD20N06
Steady, keep you advance
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Номер в каталогеОписаниеПроизводители
WFD20N06Silicon N-Channel MOSFETWinsemi
Winsemi

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