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SBAT54CWT1G PDF даташит

Спецификация SBAT54CWT1G изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Dual Series Schottky Barrier Diodes».

Детали детали

Номер произв SBAT54CWT1G
Описание Dual Series Schottky Barrier Diodes
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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SBAT54CWT1G Даташит, Описание, Даташиты
BAT54CWT1G,
SBAT54CWT1G
Dual Series Schottky
Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Features
Extremely Fast Switching Speed
Low Forward Voltage 0.35 V (Typ) @ IF = 10 mAdc
AEC Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS (TJ = 125C unless otherwise noted)
Rating
Symbol
Value
Unit
Reverse Voltage
Forward Power Dissipation
@ TA = 25C
Derate above 25C
VR 30 V
PF
200 mW
1.6 mW/C
Forward Current (DC)
NonRepetitive Peak Forward Current
tp < 10 msec
Repetitive Peak Forward Current
Pulse Wave = 1 sec,
Duty Cycle = 66%
IF
IFSM
IFRM
200 Max
600
300
mA
mA
mA
Junction Temperature
TJ 55 to 125 C
Storage Temperature Range
Tstg 55 to +150 C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2011
November, 2011 Rev. 7
1
http://onsemi.com
30 VOLT
DUAL COMMON CATHODE
SCHOTTKY BARRIER
DIODES
SOT323
CASE 419
STYLE 5
1
ANODE
3
CATHODE
2
ANODE
MARKING DIAGRAM
5CM G
G
1
5C = Device Code
M = Date Code*
G = PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping
BAT54CWT1G
SOT323
(PbFree)
3,000 /
Tape & Reel
SBAT54CWT1G
SOT323
(PbFree)
3,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
BAT54CWT1/D









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SBAT54CWT1G Даташит, Описание, Даташиты
BAT54CWT1G, SBAT54CWT1G
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
Min
Reverse Breakdown Voltage
(IR = 10 mA)
V(BR)R
30
Total Capacitance
(VR = 1.0 V, f = 1.0 MHz)
CT
Reverse Leakage
(VR = 25 V)
IR
Forward Voltage
(IF = 0.1 mAdc)
VF
Forward Voltage
(IF = 30 mAdc)
VF
Forward Voltage
(IF = 100 mAdc)
VF
Reverse Recovery Time
(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc, Figure 1)
trr
Forward Voltage
(IF = 1.0 mAdc)
VF
Forward Voltage
(IF = 10 mAdc)
VF
Typ
7.6
0.5
0.22
0.41
0.52
0.29
0.35
Max
10
2.0
0.24
0.5
0.8
5.0
0.32
0.40
Unit
V
pF
mAdc
Vdc
Vdc
Vdc
ns
Vdc
Vdc
820W
+10 V
2k
100 mH
0.1 mF
IF
0.1 mF
tr tp
10%
T
IF
trr T
50 WOUTPUT
PULSE
GENERATOR
DUT
50 W INPUT
SAMPLING
OSCILLOSCOPE
VR
90%
INPUT SIGNAL
IR iR(REC) = 1 mA
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
http://onsemi.com
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SBAT54CWT1G Даташит, Описание, Даташиты
BAT54CWT1G, SBAT54CWT1G
100
1 25C
85C
10
1 50C
1.0
0.1
0.0
25C 40C
55C
0.1 0.2 0.3 0.4 0.5
VF, FORWARD VOLTAGE (VOLTS)
Figure 2. Forward Voltage
0.6
1000
100
TA = 150C
10
TA = 125C
1.0
TA = 85C
0.1
0.01
0.001
0
TA = 25C
5 10 15 20 25
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Leakage Current
30
14
12
10
8
6
4
2
00
5 10 15 20 25
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Total Capacitance
30
http://onsemi.com
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Номер в каталогеОписаниеПроизводители
SBAT54CWT1GDual Series Schottky Barrier DiodesON Semiconductor
ON Semiconductor

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