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PDF WFF15N60 Data sheet ( Hoja de datos )
| Número de pieza | WFF15N60 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Winsemi | |
| Logotipo |  |
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WFF15N60 Product Description
Silicon N-Channel MOSFET
Features
� 15A,600V, RDS(on)(Max0.52Ω)@VGS=10V
� Ultra-low Gate charge(Typical 36nC)
� Fast Switching Capability
� 100%Avalanche Tested
� Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi's advanced planar
stripe,DMOS technology.This latest technology has been especially
designed to minimize on-state resistance, have a high rugged avalanche
characteristics .This devices is specially well suited for high efficiency
switch model power supplies, power factor correction and half bridge and
full bridge resonant topology line a electronic lamp ballast.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Continuous Drain Current(@Tc=100℃)
IDM Drain Current Pulsed
VGS Gate to Source Voltage
EAS Single Pulsed Avalanche Energy
IAR Avalanche Current
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25℃)
PD
Derating Factor above 25℃
TJ,Tstg
Junction and Storage Temperature
TL Channel Temperature
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
RQJC
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Junction-to -Ambient
D
G
S
(Note1)
(Note2)
（note 1）
(Note1)
(Note3)
Value
600
15*
9.5*
60*
±30
245
15
23.9
9.8
53
0.42
-55~150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ ns
W
W/℃
℃
℃
Value
Min Typ Max
- - 2.36
- - 62.5
Units
℃/W
℃/W
WINSEM I M ICROELECTRONICS
WINSEM I M ICROELECTRONICS
WINSEM I M ICROELECTRONICS
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
WINSEM I M ICROELECTRONICS
WT-F058-Rev.A1 Jan.2014
WINSEM I M ICROELECTRONICS
1 page  
WFF15N60 Product Description
Silicon N-Channel MOSFET
Same type
50K Ω as DUT
12V 200nF
300nF
VG S
10V
Qg
VG S VD S Qg s Qg d
DUT
3m A
Fig.12 Gate Test circuit & Waveform
Charge
10V
VD S
VG S
RG
RL
VD D
DUT
VD S 9 0 %
VG S 1 0 %
td(on) tr
to n
td ( o ff)
tf
to ff
Fig.13 Resistive Switching Test Circuit & Waveform
VD S
ID
RG
L
EA S =
1
2
L IA S 2
B VDSS
B V D S S- VD D
B VDSS
IA S
VD D ID( t)
10V
tp
DUT
VD D VD S(t)
tp T i m e
Fig.14 Unclamped Inductive Switching Test Circuit & Waveform
WIN SEM I M ICROELECTRON ICS
WIN SEM I M ICROELECTRON ICS
WIN SEM I M ICROELECTRON ICS
www.winsemi.com Tel : +86-755-8250 6288 Fax : +86-755-8250 6299
WIN SEM I M ICROELECTRON ICS
WIN SEM I M ICROELECTRON ICS
5/8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet WFF15N60.PDF ] | |
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