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PDF WFU6N70 Data sheet ( Hoja de datos )
| Número de pieza | WFU6N70 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Winsemi | |
| Logotipo |  |
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WFU6N70
Silicon N-Channel MOSFET
Features
■ 6A,700V, RDS(on)(Max 1.5Ω)@VGS=10V
■ Ultra-low Gate Charge(Typical 51nC)
■ High Current Capability
■ 100%Avalanche Tested
■ Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi’s advanced
planar stripe, This latest technology has been especially designed to
minimize on-state resistance, have a high rugged avalanche
characteristics. This devices is specially well suited for high
efficiency switch mode power supply. electronic Lamp ballasts
based on half bridge and UPS.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
ID
Continuous Drain Current(@Tc=100℃)
IDM Drain Current Pulsed tp=300us
VGS Gate to Source Voltage-Continuous
EAS Single Pulsed Avalanche Energy
Is Source Current (Body Diode)
PD Total Power Dissipation(@Tc=25℃)
TJ, Tstg
Junction and Storage Temperature
TL Channel Temperature(1/8” from case for 10s)
(Note 2)
Value
700
6
3.8
24
±30
582
6
120
-55~150
260
Units
V
A
A
A
V
mJ
A
W
℃
℃
Thermal Characteristics
Symbol
Parameter
Value
Min Typ Max
RQJC Thermal Resistance, Junction-to-Case - 0.96 1.04
RQJA
Thermal Resistance, Junction-to-Ambient
-
62.5
Units
℃/W
℃/W
WT-F014-Rev.A0 Dec.2012
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
1 page  
TO-251 Package Dimension
WFU6N70
Steady, keep you advance
5/5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet WFU6N70.PDF ] | |
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