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PDF WFF20N60 Data sheet ( Hoja de datos )
| Número de pieza | WFF20N60 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Winsemi | |
| Logotipo |  |
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Features
� 20A,600V,RDS(on)(Max0.39Ω)@VGS=10V
� Ultra-low Gate charge(Typical 50nC)
� Fast Switching Capability
� 100%Avalanche Tested
� Maximum Junction Temperature Range(150℃)
WFF20N60
Silicon N-Channel MOSFET
General Description
This Power MOSFET is produced using Winsemi's advancedplanar
s tripe,VDMOS technology.this latest technology has beenespecially
designed to minimize on-state resistance, have a high rugged avalanche
characteristics .This devices is specially w ellsuited for AC-DC switching
power supplies, DC-DC powerConverters high voltage H-bridge motor
drive PWM
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Continuous Drain Current(@Tc=100℃)
IDM Drain Current Pulsed
VGS Gate to Source Voltage
EAS Single Pulsed Avalanche Energy
IAR Avalanche Current
EAR Repetitive Avalanche Energy
dv/dt
PD
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25℃)
-Derate above 25℃
TJ,T stg Junction and Storage Temperature
TL Channel Temperature
*Drain current limited by maximum junction temperature
(Note1)
(Note2)
(Note1)
(Note1)
(Note3)
Value
600
20*
12.5*
20*
±30
450
20
20.7
50
55
0.31
-55~150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ ns
W
W/℃
℃
℃
Thermal Characteristics
Symbol
Parameter
RQJC
R QJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Junction -to -Ambient
Value
Units
Min Typ Max
- - 2.27 ℃/W
- - 62.5 ℃/W
Rev.B Jul.2013
Copyr ight@Winsemi Microelectronics Co., Ltd., All right reserved.
1 page  
TO-220F Package Dimension
WFF20N60
Unit:mm
Steady, keep you advance
5/ 5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet WFF20N60.PDF ] | |
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