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PDF WFJ8N65B Data sheet ( Hoja de datos )
| Número de pieza | WFJ8N65B | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Winsemi | |
| Logotipo |  |
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Features
� 7.5A,650V,RDS(on)(Max1.3Ω )@VGS=10V
� Ultra-low Gate charge(Typical 25nC)
� Fast Switching Capability
� 100%Avalanche Tested
� Isolation Voltage (VISO=4000V AC)
� Maximum Junction Temperature Range(150℃)
WFJ8N65B
Silicon N-Channel MOSFET
General Description
This Power MOSFET is produced using Winsemi's advanced
planar stripe, VDMOS technology. this latest technology has been
especially designed to mi nimize on-state resistance, have a high
rugged avalanche characteristics .This devices is specially well
suited for half bridge and full bridge resonant topology li ne a
electronic lamp ball ast, high efficiency switched mode power
suppli es, active power factor correction.
Absolute Maximum Ratings
S ym bol
Param eter
VDSS
ID
Drain Source Voltage
Con tinuous Drain Current(@Tc=25℃)
Con tinuous Drain Current(@Tc=100℃)
IDM Drain Current Pulsed
VGS Gate to Source Voltage
EAS Single Pulsed Avalanche Energy
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25℃)
PD
Derating Factor above 25℃
TJ,T stg
TL
Junction and Storage Temperature
Channel Temperature
(Note1)
(Note2)
(Note1)
(Note3)
Value
650
7.5
4.3
32
±30
230
14.7
4.5
147
0.38
-40~ 150
300
Units
V
A
A
A
V
mJ
mJ
V/ ns
W
W/℃
℃
℃
Thermal Characteristics
S ym bol
Parameter
RQ JC
R QJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Junction-to -Ambient
Valu e
Units
Min Typ Max
- - 0.85 ℃/W
- - 62.5 ℃/W
Rev.A Nov.2011
Copyr ight@Winsemi M ic ro e le ctro n ics Co., Ltd., All right reser ved.
1 page  
WFJ8N65B
Fig.12 Gate Test Circuit & Waveform
Fig.13 Resistive Switching Test Circuit & Waveform
Fig.14 Unclamped Inductive Switching Test Circuit & Waveform
Steady, keep you advance
5/7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet WFJ8N65B.PDF ] | |
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| Número de pieza | Descripción | Fabricantes |
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