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PDF WFP840C Data sheet ( Hoja de datos )

Número de pieza WFP840C
Descripción Power MOSFET ( Transistor )
Fabricantes Winsemi 
Logotipo Winsemi Logotipo



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No Preview Available ! WFP840C Hoja de datos, Descripción, Manual

Features
9A,500V, RDS(on)(Max0.75Ω)@VGS=10V
Ultra-low Gate charge(Typical 28nC)
Fast Switching Capability
100%Avalanche Tested
Maximum Junction Temperature Range(150℃)
WFP840C
Silicon N-Channel MOSFET
General Description
This Power MOSFET is produced using Winsemi’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. This devices is specially well
suited for high efficiency switch model power supplies, power
factor correction and half bridge and full bridge resonant topology
line a electronic lamp ballast.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
Drain Source Voltage
Continuous Drain Current(@Tc=25)
Continuous Drain Current(@Tc=100)
IDM Drain Current Pulsed
VGS Gate to Source Voltage
EAS Single Pulsed Avalanche Energy
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25)
PD
Derating Factor above 25
TJ,Tstg
Junction and Storage Temperature
TL Channel Temperature
(Note1)
(Note2)
(Note1)
(Note3)
Value
500
9
5.4
36
±30
360
13.5
4.5
130
1.07
-40~150
300
Units
V
A
A
A
V
mJ
mJ
V/ ns
W
W/
Thermal Characteristics
Symbol
Parameter
RQJC
RQCS
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Case-to-Sink
Thermal Resistance , Junction-to -Ambient
Value
Min Typ Max
- - 0.96
- 0.5 -
- - 62.5
Units
/W
/W
/W
WT-F018-Rev.A0 Apr.2013
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.

1 page




WFP840C pdf
WFP840C
Fig.12 Gate Test circuit & Waveform
Fig.13 Resistive Switching Test Circuit & Waveform
Fig.14 Unclamped Inductive Switching Test Circuit & Waveform
Steady, keep you advance
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